Photobiocidal Activity of TiO2/UHMWPE Composite Activated by Reduced Graphene Oxide under White Light.

Herein, we introduce a photobiocidal surface activated by white light. The photobiocidal surface was produced through thermocompressing a mixture of titanium dioxide (TiO2), ultra-high-molecular-weight polyethylene (UHMWPE), and reduced graphene oxide (rGO) powders. A photobiocidal activity was not observed on UHMWPE-TiO2. However, UHMWPE-TiO2@rGO exhibited potent photobiocidal activity (>3-log reduction) against Staphylococcus epidermidis and Escherichia coli bacteria after a 12 h exposure to white light. The activity was even more potent against the phage phi 6 virus, a SARS-CoV-2 surrogate, with a >5-log reduction after 6 h exposure to white light. Our mechanistic studies showed that the UHMWPE-TiO2@rGO was activated only by UV light, which accounts for 0.31% of the light emitted by the white LED lamp, producing reactive oxygen species that are lethal to microbes. This indicates that adding rGO to UHMWPE-TiO2 triggered intense photobiocidal activity even at shallow UV flux levels.

Production of Magnetic Arsenic-Phosphorus Alloy Nanoribbons with Small Band Gaps and High Hole Conductivities.

Quasi-1D nanoribbons provide a unique route to diversifying the properties of their parent 2D nanomaterial, introducing lateral quantum confinement and an abundance of edge sites. Here, a new family of nanomaterials is opened with the creation of arsenic-phosphorus alloy nanoribbons (AsPNRs). By ionically etching the layered crystal black arsenic-phosphorus using lithium electride followed by dissolution in amidic solvents, solutions of AsPNRs are formed. The ribbons are typically few-layered, several micrometers long with widths tens of nanometers across, and both highly flexible and crystalline. The AsPNRs are highly electrically conducting above 130 K due to their small band gap (ca. 0.035 eV), paramagnetic in nature, and have high hole mobilities, as measured with the first generation of AsP devices, directly highlighting their properties and utility in electronic devices such as near-infrared detectors, quantum computing, and charge carrier layers in solar cells.

MODs vs. NPs: Vying for the Future of Printed Electronics.

This Minireview compares two distinct ink types, namely metal-organic decomposition (MOD) and nanoparticle (NP) formulations, for use in the printing of some of the most conductive elements: silver, copper and aluminium. Printing of highly conductive features has found purpose across a broad array of electronics and as processing times and temperatures reduce, the avenues of application expand to low-cost flexible substrates, materials for wearable devices and beyond. Printing techniques such as screen, aerosol jet and inkjet printing are scalable, solution-based processes that historically have employed NP formulations to achieve low resistivity coatings printed at high resolution. Since the turn of the century, the rise in MOD inks has vastly extended the range of potentially applicable compounds that can be printed, whilst simultaneously addressing shelf life and sintering issues. A brief introduction to the field and requirements of an ink will be presented followed by a detailed discussion of a wide array of synthetic routes to both MOD and NP inks. Unindustrialized materials will be discussed, with the challenges and outlook considered for the market leaders: silver and copper, in comparison with the emerging field of aluminium inks.

Synthetic and Structural Studies of Ethyl Zinc ß-Amidoenoates and ß-Ketoiminates.

A set of heteroleptic ethyl zinc ß-amidoenoates (1, 2) and ß-ketoiminates (3) of the form [LZnEt]2 with varying steric bulk have been synthesised via the reaction of diethylzinc with ß-aminoenoate ligands HL1 and HL2 and ß-ketoimine HL3. These complexes have been characterised via 1H and 13C NMR, mass spectrometry and single-crystal X-ray diffraction, which unambiguously determined all three structures as dimeric species in the solid state. We observe the unusual dimerisation of 1 and 2 through coordination of the central zinc atom to the methine carbon of the second monomer, which gives these complexes high reactivity. The thermal properties of complex 3 are explored via thermal gravimetric analysis (TGA), to investigate their potential as single-source precursors to zinc oxide, which shows that 3 has a significantly lower decomposition temperature as compared to its bis-ligated counterpart [Zn(L3)2], which gives 3 promise as a single-source precursor to zinc oxide.

Molecular Complexes Featuring Unsupported Dispersion-Enhanced Aluminum-Copper and Gallium-Copper Bonds.

The reaction of the copper(I) ß-diketiminate copper complex {(Cu(BDIMes))2(µ-C6H6)} (BDIMes = N,N'-bis(2,4,6-trimethylphenyl)pentane-2,4-diiminate) with the low-valent group 13 metal ß-diketiminates M(BDIDip) (M = Al or Ga; BDIDip = N,N'-bis(2,6-diisopropylphenyl)pentane-2,4-diiminate) in toluene afforded the complexes {(BDIMes)CuAl(BDIDip)} and {(BDIMes)CuGa(BDIDip)}. These feature unsupported copper-aluminum or copper-gallium bonds with short metal-metal distances, Cu-Al = 2.3010(6) Å and Cu-Ga = 2.2916(5) Å. Density functional theory (DFT) calculations showed that approximately half of the calculated association enthalpies can be attributed to London dispersion forces.

Structural and Dynamic Properties of Gallium Alkoxides.

A comparison of chlorido-gallium functionalized alkoxides as precursors for aerosol-assisted chemical vapor deposition (AACVD) was carried out. Variable-temperature (VT)-NMR studies were used to probe the fluxional behavior of these alkoxides in solution, and hence their utility as precursors. The synthesis involved the initial isolation of the dimer [GaCl(NMe2)2]2 via a salt metathesis route from GaCl3 and 2 equiv of LiNMe2. This dimer was then reacted with 4 equiv of HOCH2CH2CH2NEt2, resulting in the formation of Ga[µ-(OCH2CH2CH2NEt2)2GaCl2]3 (1). Mass spectrometry and VT-NMR confirmed the oligomeric structure of 1. Tuning of the ligand properties, namely, the chain length and substituents on N, resulted in formation of the monomers [GaCl(OR)2] (R = CH2CH2NEt2, (2); CH2CH2CH2NMe2, (3)). VT-NMR studies, supported by density functional theory calculations, confirmed that the ligands in both 2 and 3 possess a hemilabile coordination to the gallium center, owing to either a shorter carbon backbone (2) or less steric hindrance (3). Both 2 and 3 were selected for use as precursors for AACVD: deposition at 450 °C gave thin films of amorphous Ga2O3, which were subsequently annealed at 1000 °C to afford crystalline Ga2O3 material. The films were fully characterized by X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, UV-visible spectroscopy, and energy dispersive X-ray analysis.

Solution based CVD of main group materials.

This critical review focuses on the solution based chemical vapour deposition (CVD) of main group materials with particular emphasis on their current and potential applications. Deposition of thin films of main group materials, such as metal oxides, sulfides and arsenides, have been researched owing to the array of applications which utilise them including solar cells, transparent conducting oxides (TCOs) and window coatings. Solution based CVD processes, such as aerosol-assisted (AA)CVD have been developed due to their scalability and to overcome the requirement of suitably volatile precursors as the technique relies on the solubility rather than volatility of precursors which vastly extends the range of potentially applicable compounds. An introduction into the applications and precursor requirements of main group materials will be presented first followed by a detailed discussion of their deposition reviewed according to this application. The challenges and prospects for further enabling research in terms of emerging main group materials will be discussed.

Hybrid Organic-Inorganic Coordination Complexes as Tunable Optical Response Materials.

Novel lead and bismuth dipyrido complexes have been synthesized and characterized by single-crystal X-ray diffraction, which shows their structures to be directed by highly oriented π-stacking of planar fully conjugated organic ligands. Optical band gaps are influenced by the identity of both the organic and inorganic component. Density functional theory calculations show optical excitation leads to exciton separation between inorganic and organic components. Using UV-vis, photoluminescence, and X-ray photoemission spectroscopies, we have determined the materials' frontier energy levels and show their suitability for photovoltaic device fabrication by use of electron- and hole-transport materials such as TiO2 and spiro-OMeTAD respectively. Such organic/inorganic hybrid materials promise greater electronic tunability than the inflexible methylammonium lead iodide structure through variation of both the metal and organic components.

Tris(ß-ketoiminate) Aluminium(III) Compounds as Aluminium Oxide Precursors.

Precursor design is the crucial step in tailoring the deposition profile towards a multitude of functional materials. Most commercially available aluminium oxide precursors require high processing temperatures (>500 °C). Herein, we report the tuning of the decomposition profile (200-350 °C) of a range of octahedrally coordinated tris(ß-ketoiminate) aluminium complexes of the type [Al(MeCN(R)CHC=OMe)3 ], by varying the R substituents in the ligands. The complexes are derived from the reaction of trimethylamine alane (TMAA) and a series of N-substituted ß-ketoiminate ligands (R-acnacH, R=Me, Et, i Pr, Ph) with varying R-substituents sizes. When the more sterically encumbered ligand (R=Mes) was used, the Al atom became five-coordinate, therefore representing the threshold to octahedral coordination around the metal in these type of compounds, which, consequently, lead to a change of decomposition profile. The resulting compounds have been characterised by NMR spectroscopy, mass spectrometry, elemental analysis and single crystal X-ray diffraction. [Al(MeCN(Me)CHC=OMe)3 ] has been used as a single source precursor for the deposition of Al2 O3 . Thin films were deposited via aerosol assisted chemical vapour deposition (AACVD), with toluene as the solvent, and were analysed using SEM, EDX and XPS.

Unraveling the Steric Link to Copper Precursor Decomposition: A Multi-Faceted Study for the Printing of Flexible Electronics.

The field of printed electronics strives for lower processing temperatures to move toward flexible substrates that have vast potential: from wearable medical devices to animal tagging. Typically, ink formulations are optimized using mass screening and elimination of failures; as such, there are no comprehensive studies on the fundamental chemistry at play. Herein, findings which describe the steric link to decomposition profile: combining density functional theory, crystallography, thermal decomposition, mass spectrometry, and inkjet printing, are reported. Through the reaction of copper(II) formate with excess alkanolamines of varying steric bulk, tris-co-ordinated copper precursor ions: "[CuL3 ]," each with a formate counter-ion (1-3) are isolated and their thermal decomposition mass spectrometry profiles are collected to assess their suitability for use in inks (I1-3 ). Spin coating and inkjet printing of I1,2 provides an easily up-scalable method toward the deposition of highly conductive copper device interconnects (ρ = 4.7-5.3 × 10-7 Ω m; ≈30% bulk) onto paper and polyimide substrates and forms functioning circuits that can power light-emitting diodes. The connection among ligand bulk, coordination number, and improved decomposition profile supports fundamental understanding which will direct future design.

The role of group 14 element hydrides in the activation of C-H bonds in cyclic olefins.

Formally, triple-bonded dimetallynes ArEEAr [E = Ge (1), Sn (2); Ar = C(6)H(3)-2,6-(C(6)H(3)-2,6-(i)Pr(2))(2)] have been previously shown to activate aliphatic, allylic C-H bonds in cyclic olefins, cyclopentadiene (CpH), cyclopentene (c-C(5)H(8)) and 1,4-cyclohexadiene, with intriguing selectivity. In the case of the five-membered carbocycles, cyclopentadienyl species ArECp [E = Ge (3), Sn (4)] are formed. In this study, we examine the mechanisms for activation of CpH and c-C(5)H(8) using experimental methods and describe a new product found from the reaction between 1 and c-C(5)H(8), an asymmetrically substituted digermene ArGe(H)Ge(c-C(5)H(9))Ar (5), crystallized in 46% yield. This compound contains a hydrogenated cyclopentyl moiety and is found to be produced in a 3:2 ratio with 3, explaining the fate of the liberated H atoms following triple C-H activation. We show that when these C-H activation reactions are carried out in the presence of tert-butyl ethylene (excess), compounds {ArE(CH(2)CH(2)tBu)}(2) [E = Ge(8), Sn(9)] are obtained in addition to ArECp; in the case of CpH, the neohexyl complexes replace the production of H(2) gas, and for c-C(5)H(8) they displace cyclopentyl product 5 and account for all the hydrogen removed in the dehydroaromatization reactions. To confirm the source of 8 and 9, it was demonstrated that these molecules are formed cleanly between the reaction of (ArEH)(2) [E = Ge(6), Sn(7)] and tert-butyl ethylene, new examples of noncatalyzed hydro-germylation and -stannylation. Therefore, the presence of transient hydrides of the type 6 and 7 can be surmised to be reactive intermediates in the production of 3 and 4, along with H(2), from 1 and 2 and CpH (respectively), or the formation of 3 and 5 from 1. The reaction of 6 or 7 with CpH gave 3 or 4, respectively, with concomitant H(2) evolution, demonstrating the basic nature of these low-valent group 14 element hydrides and their key role in the 'cascade' of C-H activation steps. Additionally, during the course of these studies a new polycyclic compound (ArGe)(2)(C(7)H(12)) (10) was obtained in 60% yield from the reaction of 1,6-heptadiene and 1 via double [2 + 2] cycloaddition and gives evidence for a nonradical mechanism for these types of reactions.

Dimethylalkoxygallanes: monomeric versus dimeric gas-phase structures.

The molecular structures of the vapors produced on heating dimethylalkoxygallanes of the type [Me(2)Ga(OR)](2) have been determined by gas electron diffraction and ab initio molecular orbital calculations. In the solid state [Me(2)Ga(OCH(2)CH(2)NMe(2))](2) (1) and [Me(2)Ga(OCH(2)CH(2)OMe)](2) (2) adopt dimeric structures, although only the monomeric forms [Me(2)Ga(OCH(2)CH(2)NMe(2))] (1a) and [Me(2)Ga(OCH(2)CH(2)OMe)] (2a) were observed in the gas phase. For comparison the structure of the vapor produced on heating [Me(2)Ga(O(t)Bu)](2) (3) was also studied by gas electron diffraction. In contrast to 1 and 2, compound 3 is dimeric in the gas phase, as well as in the solid state. The gas-phase structures of 1a and 2a exhibit five-membered rings formed by a dative bond between Ga and the donor atom (N or O) from the donor-functionalized alkoxide. In 3 there is no possibility of a monomeric structure being stabilized by the formation of such a dative bond since only a monofunctional alkoxide is present in the molecule.

Ethyl Zinc ß-Ketoiminates and ß-Amidoenoates: Influence of Precursor Design on the Properties of Highly Conductive Zinc Oxide Thin Films from Aerosol-Assisted Chemical Vapour Deposition.

Highly transparent (>85 %) and conductive (1.086×10-3 â€…Ω cm) zinc oxide thin films have been deposited from specifically selected precursors allowing us to establish a direct correlation between their molecular structure and the optoelectronic properties of the deposited films. Mono-ligated ethyl zinc compounds of varying steric bulk: [EtZn(OC(Me)CH(Me)N(i Pr))]2 (1), [EtZn(OC(OEt)CH(Me)N(i Pr))]2 (2) and [EtZn(OC(OEt)CH(CH3 )N(Dipp))]2 (3) were compared with the related bis-ligated zinc complexes [Zn(OC(Me)CH(Me)N(i Pr))2 ] (4), [Zn(OC(OEt)CH(Me)N(i Pr))2 ] (5) and [Zn(OC(OEt)CH(Me)N(Dipp))2 ] (6). In all cases bulkier ligands resulted in poorer electronic properties of deposited films, whilst all mono-ligated compounds were shown as superior precursors. All complexes were characterised by 1 H and 13 C{1 H} NMR and elemental analysis, with the structure of 6 determined by single crystal X-ray diffraction. Zinc oxide films were deposited from single and dual source (with methanol) reactions of these precursors, and analysed via XRD, XPS and EDX. Optoelectronic properties were investigated through UV/vis spectroscopy and Hall effect measurements, and morphology was examined via SEM. Tauc plots from UV/vis data indicated that Film A showed the lowest band gap of 3.31 eV. Varying the elemental composition of the precursors led to changes in the elemental composition of the resultant films, as well as changes in their structural and optoelectronic properties. Using this approach of precursor design, we have been able to tune single source precursors towards zinc oxide to deposit films with specific properties.

Synthetic and structural studies of donor-functionalized alkoxy derivatives of gallium.

The synthesis of a range of alkyl/chloro-gallium alkoxide and amido/alkoxide compounds was achieved via a series of protonolysis and alcoholysis steps. The initial reaction involved the synthesis of [Me(Cl)Ga{N(SiMe(3))(2)}](2) (1) via methyl group transfer from the reaction of GaCl(3) with two equivalents of LiN(SiMe(3))(2). Reaction of 1 with varying amounts of ROH resulted in the formation of [Me(Cl)Ga(OR)](2) (2, R = CH(2)CH(2)OMe; 3, CH(CH(3))CH(2)NMe(2)), [Me(Cl)Ga{N(SiMe(3))(2)}(µ(2)-OR)Ga(Cl)Me] (4, R = CH(2)CH(2)NMe(2)), or [MeGa(OR)(2)] (5, R = CH(CH(3))CH(2)NMe(2)). Compound 4 represents an intermediate in the formation of dimeric complexes, of the type [Me(Cl)Ga(OR)](2), when formed from compound [Me(Cl)Ga{N(SiMe(3))(2)}](2). A methylgallium amido/alkoxide complex [MeGa{N(SiMe(3))(2)}(OCH(2)CH(2)OMe)](2) (6) was isolated when 2 was further reacted with LiN(SiMe(3))(2). In addition, reaction of 2 with HO(t)Bu resulted in a simple alcohol/alkoxide exchange and formation of [Me(Cl)Ga(O(t)Bu)](2) (7). In contrast to the formation of 1, the in situ reaction of GaCl(3) with one equivalent of LiN(SiMe(3))(2) yielded [Cl(2)Ga{N(SiMe(3))(2)}](2) in low yield, where no methyl group transfer has occurred. Reaction of alcohol with [Cl(2)Ga{N(SiMe(3))(2)}](2) was then found to yield [Cl(2)Ga(OR)](2) (8, R = CH(2)CH(2)NMe(2)), and further reaction of 8 with LiN(SiMe(3))(2) yielded the gallium amido alkoxide complex, [ClGa{N(SiMe(3))(2)}(OR)](2) (9, R = CH(2)CH(2)NMe(2)), similar to 6. The structures of compounds 4, 5, 7, and 8 have been determined by single-crystal X-ray diffraction.

Investigations into the structure, reactivity, and AACVD of aluminium and gallium amidoenoate complexes.

Amidoenoate (AME = {ethyl-3-(R-amido)but-2-enoate}) complexes of aluminium and gallium, of the type: [AlCl2(AMER)] R = iPr (1-Al); [AlCl(AMER)2] R = iPr (2-Al), Dip (3-Al); [GaCl2(AMER)] R = iPr (1-Ga) and [GaCl(AMER)2] R = iPr (2-Ga), Dip (3-Ga), have been synthesised (iPr = isopropyl, Dip = 2,6-diisopropylphenyl). The coordination chemistry of these complexes has been studied in relation to precursor suitability. Investigations into the reactivity of the aluminium and gallium amidoenoate complexes involved reactions with hydride sources including alkali metal hydride salts, alkylsilanes, and magnesium hydride species and magnesium(I) dimers. The isolation of alkyl metal amidoenoate precursors including an aluminium hydride amidoenoate, [AlH(AMEDip)2] (4-Al) and dimethyl gallium amidoenoates [GaMe2(AMEDip)] (4-Ga), [GaMe2(AMEiPr)] (5-Ga) concluded the synthetic studies. A selection of the isolated complexes were used as precursors for aerosol assisted chemical vapour deposition (AACVD) at 500 °C. Thin films of either amorphous Al2O3 or Ga2O3 were deposited and subsequently annealed at 1000 °C to improve the materials' crystallinity. The films were characterised by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), UV-visible (UV-vis) spectroscopy and energy dispersive X-ray analysis (EDXA).

Synthesis, solution dynamics and chemical vapour deposition of heteroleptic zinc complexes via ethyl and amide zinc thioureides.

Ethyl and amide zinc thioureides [L1ZnEt]2 (1), [L1*ZnEt]2 (2) and [L1Zn(N(SiMe3)2)]2 (3) have been synthesised from the equimolar reaction of thiourea ligands (HL1 = iPrN(H)CSNMe2 and HL1* = PhN(H)CSNMe2) with diethyl zinc and zinc bis[bis(trimethylsilyl)amide] respectively. New routes towards heteroleptic complexes have been investigated through reactions of 1, 2 and 3 with ß-ketoiminates (HL2 = [(Me)CN(H){iPr}-CHC(Me)[double bond, length as m-dash]O]), bulky aryl substituted ß-diiminates (HL3 = [(Me)CN(H){Dipp}-CHC(Me)[double bond, length as m-dash]N{Dipp}] (Dipp = diisopropylphenyl) and HL3* = [(Me)CN(H){Dep}-CHC(Me)[double bond, length as m-dash]N{Dep}] (Dep = diethylphenyl)) and donor-functionalised alcohols (HL4 = Et2N(CH2)3OH and HL4* = Me2N(CH2)3OH) and have led to the formation of the heteroleptic complexes [L1*ZnL3*] (5), [L1ZnL4]2 (6), [L1ZnL4*]2 (7), [L1*ZnL4] (8) and [L1*ZnL4*] (9). All complexes have been characterised by 1H and 13C NMR, elemental analysis, and the X-ray structures of HL1*, 1, 2, 6 and 7 have been determined via single crystal X-ray diffraction. Variable temperature 1H, COSY and NOESY NMR experiments investigating the dynamic behaviour of 5, 6 and 7 have shown these molecules to be fluxional. On the basis of solution state fluxionality and thermogravimetric analysis (TGA), alkoxyzinc thioureides 6 and 7 were investigated as single-source precursors for the deposition of the ternary material zinc oxysulfide, Zn(O,S), a buffer layer used in thin film photovoltaic devices. The aerosol-assisted chemical vapour deposition (AACVD) reaction of 7 at 400 °C led to the deposition of the heterodichalcogenide material Zn(O,S), which was confirmed by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and energy dispersive X-ray analysis (EDX), with optical properties investigated using UV/vis spectroscopy, and surface morphology and film thickness examined using scanning electron microscopy (SEM).

Chemical vapour deposition (CVD) of nickel oxide using the novel nickel dialkylaminoalkoxide precursor [Ni(dmamp')2] (dmamp' = 2-dimethylamino-2-methyl-1-propanolate).

Nickel oxide (NiO) has good optical transparency and wide band-gap, and due to the particular alignment of valence and conduction band energies with typical current collector materials has been used in solar cells as an efficient hole transport-electron blocking layer, where it is most commonly deposited via sol-gel or directly deposited as nanoparticles. An attractive alternative approach is via vapour deposition. This paper describes the chemical vapour deposition of p-type nickel oxide (NiO) thin films using the new nickel CVD precursor [Ni(dmamp')2], which unlike previous examples in literature is synthesised using the readily commercially available dialkylaminoalkoxide ligand dmamp' (2-dimethylamino-2-methyl-1-propanolate). The use of vapour deposited NiO as a blocking layer in a solar-cell device is presented, including benchmarking of performance and potential routes to improving performance to viable levels.

Low-Temperature Deposition of Highly Conductive Aluminum Metal Films on Flexible Substrates Using Liquid Alane MOD Precursors.

Metal-organic decomposition (MOD) precursor inks are emerging as the new route to low-temperature deposition of highly conductive metals, owing to the tunability of their decomposition. New methods of printing are being investigated to help negate the progressive issues of the electronics industry, not least the movement toward low-cost polymers and paper substrates. Informed precursor design is crucial if achieving materials capable of this is possible. In this work, the liquid MOD precursors, dimethylethylamine alane (DMEAA) and trimethylamine alane (TEAA), have been used to deposit a highly conductive aluminum (Al) metal with resistivities in the range of 4.10 × 10-5 to 5.32 × 10-7 Ω m (mean electrical resistivity of 8 × 10-6 Ω m, approximately 300 times more resistive than bulk Al metal), without the need for an additional solvent, at low temperatures (100 and 120 °C), on a range of substrates including glass, polyimide, polyethylene terephthalate, and paper. Conductive coatings have been analyzed using X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy and resistivity measurements; as a proof of concept, Al deposited on paper has been used in an electrical circuit. Results indicate that DMEAA is a better precursor, producing more conductive films, which is explained by its lower decomposition temperature and higher Al weight loading, indicating potential for significant industrial application.

Iron-Intercalated Zirconium Diselenide Thin Films from the Low-Pressure Chemical Vapor Deposition of [Fe(η5-C5H4Se)2Zr(η5-C5H5)2]2.

Transition metal chalcogenide thin films of the type Fe x ZrSe2 have applications in electronic devices, but their use is limited by current synthetic techniques. Here, we demonstrate the synthesis and characterization of Fe-intercalated ZrSe2 thin films on quartz substrates using the low-pressure chemical vapor deposition of the single-source precursor [Fe(η5-C5H4Se)2Zr(η5-C5H5)2]2. Powder X-ray diffraction of the film scraping and subsequent Rietveld refinement of the data showed the successful synthesis of the Fe0.14ZrSe2 phase, along with secondary phases of FeSe and ZrO2. Upon intercalation, a small optical band gap enhancement (E g(direct) opt = 1.72 eV) is detected in comparison with that of the host material.

A rugged, self-sterilizing antimicrobial copper coating on ultra-high molecular weight polyethylene: a preliminary study on the feasibility of an antimicrobial prosthetic joint material.

We report here for the first time how the combination of a precursor solution and low temperature (170 °C) aerosol assisted chemical vapour deposition were used to bond a copper coating to ultra-high molecular weight polyethylene (UHMWPE) and promote robustness. This metallic thin film remained intact on the UHMWPE substrate after the Scotch tape test and showed notable wear-resistance after 10 cycles of sand paper-abrasion. Antimicrobial assays against both Escherichia coli and Staphylococcus aureus revealed potent dark bactericidal activity with 99.999% reduction in bacterial number within 15 minutes. These results suggest that the modified UHMWPE could be a potential candidate for antimicrobial plastics and in the long term may find application in prosthetic joint applications.