Chip-scale integrated holographic devices based on top-emitting vertical cavity surface emitting lasers.

Holography technology is considered the ultimate three-dimensional (3D) visualization technology in the future. However, conventional methods for achieving holography generally utilize discrete optical components and off-chip laser sources, resulting in a large size and high complexity, which are undesirable for practical applications. In this Letter, chip-scale integrated holographic devices are realized by integrating top-emitting vertical cavity surface emitting lasers (VCSELs) with micro holograms printed by 3D femtosecond laser nanoprinting technology. The VCSELs are designed to operate in a single fundamental mode with a Gaussian emission profile. Then the Gaussian beams are phase-modulated by the integrated micro holograms designed by the Gerchberg-Saxton (GS) algorithm and the target holographic images can be displayed behind the holograms. Such integrated holographic devices are of micron size and can be easily scaled into arrays with arbitrary channels on-demand, which are important for achieving miniaturized and portable holographic imaging systems.

Nanoprinted Diffractive Layer Integrated Vertical-Cavity Surface-Emitting Vortex Lasers with Scalable Topological Charge.

Vertical-cavity surface-emitting lasers (VCSELs) represent an attractive light source to integrate with OAM structures to realize chip-scale vortex lasers. Although pioneering endeavors of VCSEL-based vortex lasers have been reported, they cannot achieve large topological charges (less than l = 5) due to the insufficient space-bandwidth product (SBP) caused by the inherent limited device size. Here, by integrating a nanoprinted OAM phase structure on the VCSELs, we demonstrate a vortex microlaser with a low threshold and simple structure. A monolithic microlaser array with addressable control of vortex beams with different topological charges (l = 1 to l = 5) was achieved. Nanoprinting offers high degrees of freedom for the manipulation of spatial structures. To address the challenge of insufficient SBP, two-layer cascaded spiral phase plates were designed. Thereby, a vortex beam with l = 15 and mode purity of 83.7% was obtained. Our work paves the way for future chip-scale OAM-based information multiplexing with more channels.

Dynamic phase manipulation of vertical-cavity surface-emitting lasers via on-chip integration of microfluidic channels.

Vertical-cavity surface-emitting lasers (VCSELs) play a key role in the development of the next generation of optoelectronic technologies, thanks to their unique characteristics, such as low-power consumption, circular beam profile, high modulation speed, and large-scale two-dimensional array. Dynamic phase manipulation of VCSELs within a compact system is highly desired for a large variety of applications. In this work, we incorporate the emerging microfluidic technologies into the conventional VCSELs through a monolithic integration approach, enabling dynamic phase control of lasing emissions with low power consumption and low thermal generation. As a proof of concept, a beam steering device is experimentally demonstrated by integrating microfluidic channel on a coherently coupled VCSELs array. Experimental results show that the deflection angles of the laser beam from the chip can be tuned from 0° to 2.41° under the injection of liquids with different refractive index into the microchannel. This work opens an entirely new solution to implement a compact laser system with real-time wavefront controllability. It holds great potentials in various applications, including optical fiber communications, laser printing, optical sensing, directional displays, ultra-compact light detection and ranging (LiDAR).

Graphene-assisted preparation of large-scale single-crystal Ag(111) nanoparticle arrays for surface-enhanced Raman scattering.

Surface plasmon resonance (SPR) of metal nanostructures has broad application prospects in the fields of sensing, energy, catalysis and optics. This paper reports a graphene-assisted method for preparing large-scale single-crystal Ag(111) nanoparticle (NP) arrays based on the ion implantation technique. By surface periodic patterning treatment and annealing of the implanted sample, regularly arranged Ag NPs can be prepared on the sample surface. A new application for graphene is proposed, that is, as a perfect barrier layer to prevent metal atoms from evaporating or diffusing. All the Ag NPs show (111) crystal orientation. Besides, the Ag atoms are covered by graphene immediately when they precipitate from the substrate, which can prevent them from being oxidized. On the basis of this structure, as one of the applications of the metal SPR, we have measured the surface-enhanced Raman scattering effect and found that the G peak of the Raman spectrum of the graphene achieved about 20 times enhancement.

Ultra-compact electrically controlled beam steering chip based on coherently coupled VCSEL array directly integrated with optical phased array.

Beam steering devices have wide applications in both military and civil fields. The ultimate goal for such devices is to reduce their size, weight, and power consumption. However, the laser source in these devices is spatially separate from the phase shifter, resulting in large size, complex packaging, and low coupling efficiency. To solve these problems, a novel electrically controlled beam steering chip based on coherently coupled vertical cavity surface emitting laser (VCSEL) array directly integrated with liquid crystal optical phased array (LCOPA) is proposed in this paper. Implant-defined in-phase coherently coupled VCSEL arrays (CCVAs) with uniform near-field are designed and fabricated first to act as the coherent laser source for the chip. Then, taking advantage of the CCVA planar structure, the LCOPA is integrated directly on the CCVA by conventional process. The coherent light generated by the in-phase CCVA is uniformly and normally incident into the LCOPA and is electrically steered by the LCOPA. One-dimensional beam steering is achieved by two proof-of-concept integrated chips. The chips based on a 4 × 4 square CCVA and a 16-element hexagonal CCVA offer a field of view of 2.21° and 6.06°, respectively. Independent control of the CCVA and LCOPA guarantees a relatively high wavelength stability and power stability. Theoretical calculations are also performed, which are consistent with the experiments.

Transfer-free, lithography-free and fast growth of patterned CVD graphene directly on insulators by using sacrificial metal catalyst.

Chemical vapor deposited graphene suffers from two problems: transfer from metal catalysts to insulators, and photoresist induced degradation during patterning. Both result in macroscopic and microscopic damages such as holes, tears, doping, and contamination, translated into property and yield dropping. We attempt to solve the problems simultaneously. A nickel thin film is evaporated on SiO2 as a sacrificial catalyst, on which surface graphene is grown. A polymer (PMMA) support is spin-coated on the graphene. During the Ni wet etching process, the etchant can permeate the polymer, making the etching efficient. The PMMA/graphene layer is fixed on the substrate by controlling the surface morphology of Ni film during the graphene growth. After etching, the graphene naturally adheres to the insulating substrate. By using this method, transfer-free, lithography-free and fast growth of graphene realized. The whole experiment has good repeatability and controllability. Compared with graphene transfer between substrates, here, no mechanical manipulation is required, leading to minimal damage. Due to the presence of Ni, the graphene quality is intrinsically better than catalyst-free growth. The Ni thickness and growth temperature are controlled to limit the number of layers of graphene. The technology can be extended to grow other two-dimensional materials with other catalysts.

Phase tuning in two-dimensional coherently coupled vertical-cavity surface-emitting laser array.

Implant-defined vertical-cavity surface-emitting laser (VCSEL) arrays can be designed to operate in in-phase mode. However, the nonuniformities in fabrication process impact the resonance selection and the devices do not follow expected trends. Coherent coupling was demonstrated in three-element VCSEL arrays via phase tuning of elements. In-phase mode and out-of-phase mode were both achieved in most of the arrays. Moreover, coherent coupling can decrease the threshold current of elements in the array. Improved output power was also clearly observed when the array operated in the in-phase mode. Arbitrary phase combination of the array elements can be obtained via the phase tuning. This technology is able to improve the reproducibility and practicability of the implant-defined coherently coupled VCSEL array.

Harnessing the capabilities of VCSELs: unlocking the potential for advanced integrated photonic devices and systems.

Vertical cavity surface emitting lasers (VCSELs) have emerged as a versatile and promising platform for developing advanced integrated photonic devices and systems due to their low power consumption, high modulation bandwidth, small footprint, excellent scalability, and compatibility with monolithic integration. By combining these unique capabilities of VCSELs with the functionalities offered by micro/nano optical structures (e.g. metasurfaces), it enables various versatile energy-efficient integrated photonic devices and systems with compact size, enhanced performance, and improved reliability and functionality. This review provides a comprehensive overview of the state-of-the-art versatile integrated photonic devices/systems based on VCSELs, including photonic neural networks, vortex beam emitters, holographic devices, beam deflectors, atomic sensors, and biosensors. By leveraging the capabilities of VCSELs, these integrated photonic devices/systems open up new opportunities in various fields, including artificial intelligence, large-capacity optical communication, imaging, biosensing, and so on. Through this comprehensive review, we aim to provide a detailed understanding of the pivotal role played by VCSELs in integrated photonics and highlight their significance in advancing the field towards efficient, compact, and versatile photonic solutions.

The Growth of Graphene on Ni-Cu Alloy Thin Films at a Low Temperature and Its Carbon Diffusion Mechanism.

Carbon solid solubility in metals is an important factor affecting uniform graphene growth by chemical vapor deposition (CVD) at high temperatures. At low temperatures, however, it was found that the carbon diffusion rate (CDR) on the metal catalyst surface has a greater impact on the number and uniformity of graphene layers compared with that of the carbon solid solubility. The CDR decreases rapidly with decreasing temperatures, resulting in inhomogeneous and multilayer graphene. In the present work, a Ni-Cu alloy sacrificial layer was used as the catalyst based on the following properties. Cu was selected to increase the CDR, while Ni was used to provide high catalytic activity. By plasma-enhanced CVD, graphene was grown on the surface of Ni-Cu alloy under low pressure using methane as the carbon source. The optimal composition of the Ni-Cu alloy, 1:2, was selected through experiments. In addition, the plasma power was optimized to improve the graphene quality. On the basis of the parameter optimization, together with our previously-reported, in-situ, sacrificial metal-layer etching technique, relatively homogeneous wafer-size patterned graphene was obtained directly on a 2-inch SiO2/Si substrate at a low temperature (~600 °C).

Metal-Catalyst-Free Growth of Patterned Graphene on SiO2 Substrates by Annealing Plasma-Induced Cross-Linked Parylene for Optoelectronic Device Applications.

A metal-catalyst-free method for the direct growth of patterned graphene on an insulating substrate is reported in this paper. Parylene N is used as the carbon source. The surface molecule layer of parylene N is cross-linked by argon plasma bombardment. Under high-temperature annealing, the cross-linking layer of parylene N is graphitized into nanocrystalline graphene, which is a process that transforms organic to inorganic and insulation to conduction, while the parylene N molecules below the cross-linking layer decompose and vaporize at high temperature. Using this technique, the direct growth of a graphene film in a large area and with good uniformity is achieved. The thickness of the graphene is determined by the thickness of the cross-linking layer. Patterned graphene films can be obtained directly by controlling the patterns of the cross-linking region (lithography-free patterning). Graphene-silicon Schottky junction photodetectors are fabricated using the as-grown graphene. The Schottky junction shows good performance. The application of direct-grown graphene in optoelectronics is achieved with a great improvement of the device fabrication efficiency compared with transferred graphene. When illuminated with a 792 nm laser, the responsivity and specific detectivity of the detector measured at room temperature are 275.9 mA/W and 4.93 × 109 cm Hz1/2/W, respectively.