RESUMEN
Two-dimensional (2D) materials have attracted extensive research interest in academia due to their excellent electrochemical properties and broad application prospects. Among them, 2D transition metal carbides (Ti3 C2 Tx ) show semiconductor characteristics and are studied widely. However, there are few academic reports on the use of 2D MXene materials as memristors. In this work, reported is a memristor based on MXene Ti3 C2 Tx flakes. After electroforming, Al/Ti3 C2 Tx /Pt devices exhibit repeatable resistive switching (RS) behavior. More interestingly, the resistance of this device can be continuously modulated under the pulse sequence with 10 ns pulse width, and the pulse width of 10 ns is much lower than that in other reported work. Moreover, on the nanosecond scale, the transition from short-term plasticity to long-term plasticity is achieved. These two properties indicate that this device is favorable for ultrafast biological synapse applications and high-efficiency training of neural networks. Through the exploration of the microstructure, Ti vacancies and partial oxidation are proposed as the origins of the physical mechanism of RS behavior. This work reveals that 2D MXene Ti3 C2 Tx flakes have excellent potential for use in memristor devices, which may open the door for more functions and applications.
RESUMEN
Memristors with nonvolatile memory characteristics have been expected to open a new era for neuromorphic computing and digital logic. However, existing memristor devices based on oxygen vacancy or metal-ion conductive filament mechanisms generally have large operating currents, which are difficult to meet low-power consumption requirements. Therefore, it is very necessary to develop new materials to realize memristor devices that are different from the mechanisms of oxygen vacancy or metal-ion conductive filaments to realize low-power operation. Herein, high-performance and low-power consumption memristors based on 2D WS2 with 2H phase are demonstrated, which show fast ON (OFF) switching times of 13 ns (14 ns), low program current of 1 µA in the ON state, and SET (RESET) energy reaching the level of femtojoules. Moreover, the memristor can mimic basic biological synaptic functions. Importantly, it is proposed that the generation of sulfur and tungsten vacancies and electron hopping between vacancies are dominantly responsible for the resistance switching performance. Density functional theory calculations show that the defect states formed by sulfur and tungsten vacancies are at deep levels, which prevent charge leakage and facilitate the realization of low-power consumption for neuromorphic computing application.
RESUMEN
The development of the information age has made resistive random access memory (RRAM) a critical nanoscale memristor device (MD). However, due to the randomness of the area formed by the conductive filaments (CFs), the RRAM MD still suffers from a problem of insufficient reliability. In this study, the memristor of Ag/ZrO2/WS2/Pt structure is proposed for the first time, and a layer of two-dimensional (2D) WS2 nanosheets was inserted into the MD to form 2D material and oxide double-layer MD (2DOMD) to improve the reliability of single-layer devices. The results indicate that the electrochemical metallization memory cell exhibits a highly stable memristive switching and concentrated ON- and OFF-state voltage distribution, high speed (â¼10 ns), and robust endurance (>109 cycles). This result is superior to MDs with a single-layer ZrO2 or WS2 film because two layers have different ion transport rates, thereby limiting the rupture/rejuvenation of CFs to the bilayer interface region, which can greatly reduce the randomness of CFs in MDs. Moreover, we used the handwritten recognition dataset (i.e., the Modified National Institute of Standards and Technology (MNIST) database) for neuromorphic simulations. Furthermore, biosynaptic functions and plasticity, including spike-timing-dependent plasticity and paired-pulse facilitation, have been successfully achieved. By incorporating 2D materials and oxides into a double-layer MD, the practical application of RRAM MD can be significantly enhanced to facilitate the development of artificial synapses for brain-enhanced computing systems in the future.
RESUMEN
With the advent of the era of big data, resistive random access memory (RRAM) has become one of the most promising nanoscale memristor devices (MDs) for storing huge amounts of information. However, the switching voltage of the RRAM MDs shows a very broad distribution due to the random formation of the conductive filaments. Here, self-assembled lead sulfide (PbS) quantum dots (QDs) are used to improve the uniformity of switching parameters of RRAM, which is very simple comparing with other methods. The resistive switching (RS) properties of the MD with the self-assembled PbS QDs exhibit better performance than those of MDs with pure-Ga2 O3 and randomly distributed PbS QDs, such as a reduced threshold voltage, uniformly distributed SET and RESET voltages, robust retention, fast response time, and low power consumption. This enhanced performance may be attributed to the ordered arrangement of the PbS QDs in the self-assembled PbS QDs which can efficiently guide the growth direction for the conducting filaments. Moreover, biosynaptic functions and plasticity, are implemented successfully in the MD with the self-assembled PbS QDs. This work offers a new method of improving memristor performance, which can significantly expand existing applications and facilitate the development of artificial neural systems.