Constant Electricity Generation in Nanostructured Silicon by Evaporation-Driven Water Flow.

Recently, hydrovoltaic technology emerged as a novel renewable energy harvesting method, which dramatically extends the capability to harvest water energy. However, the urgent issue restricting its device performance is poor carrier transport properties of the solid surface if large charged interface is considered simultaneously. Herein, a hydrovoltaic device based on silicon nanowire arrays (SiNWs), which provide large charged surface/volume ratio and excellent carrier transport properties, yields sustained electricity by a carrier concentration gradient induced by evaporation-induced water flow inside nanochannels. The device can yield direct current with a short-circuit current density of over 55 µA cm-2 , which is three orders larger than a previously reported analogous device (approximately 40 nA cm-2 ). Moreover, it exhibits a constant output power density of over 6 µW cm-2 and an open-circuit voltage of up to 400 mV. Our finding may pave a way for developing energy-harvesting devices from ubiquitous evaporation-driven internal water flow in nature with semiconductor material of silicon.

High-Efficiency Perovskite Light-Emitting Diodes with Improved Interfacial Contact.

Unbalanced charge injection is one of the major issues that hampers the efficiency of perovskite light-emitting diodes (PeLEDs). Through engineering the device structure with multiple hole transport layers (HTLs), i.e., poly(9,9-dioctyl-fluorene-co-N-(4-butylphenyl)diphenylamine) (TFB)/poly(9-vinylcarbazole) (PVK) and nickel oxide (NiOx)/TFB/PVK, efficient PeLED devices have been successfully demonstrated. However, in a typical solution-processed PeLED with multiple HTLs, the underlying conjugated HTL could be easily redissolved by the ink of the following one, which not only dramatically deteriorates the electrical property of HTLs but also influences the quality of the top perovskite films. In this work, through inserting a thin atomic layer-deposited aluminum oxide (Al2O3) layer between HTLs and the perovskite layer, an improved interfacial contact can be achieved, which enables us to obtain perovskite films with enhanced characteristics and balanced charge injection in the resultant PeLEDs. In addition, because of the proper refractive index (r), the presence of the Al2O3 layer also favors the light out-coupling of PeLEDs. As a result, we fabricate green PeLEDs with good repeatability and external quantum efficiency of 17.0%, which is approximately 60% higher than that of the control device without Al2O3. Our work provides a promising avenue to enhance interfacial contact between the charge transport layer and perovskite for efficient perovskite-based optoelectronic devices.