High-Sensitivity CMOS-Integrated Floating Gate-Based UVC Sensors.

We report on novel UVC sensors based on the floating gate (FG) discharge principle. The device operation is similar to that of EPROM non-volatile memories UV erasure, but the sensitivity to ultraviolet light is strongly increased by using single polysilicon devices of special design with low FG capacitance and long gate periphery (grilled cells). The devices were integrated without additional masks into a standard CMOS process flow featuring a UV-transparent back end. Low-cost integrated UVC solar blind sensors were optimized for implementation in UVC sterilization systems, where they provided feedback on the radiation dose sufficient for disinfection. Doses of ~10 µJ/cm2 at 220 nm could be measured in less than a second. The device can be reprogrammed up to 10,000 times and used to control ~10-50 mJ/cm2 UVC radiation doses typically employed for surface or air disinfection. Demonstrators of integrated solutions comprising UV sources, sensors, logics, and communication means were fabricated. Compared with the existing silicon-based UVC sensing devices, no degradation effects that limit the targeted applications were observed. Other applications of the developed sensors, such as UVC imaging, are also discussed.

Embedded UV Sensors in CMOS SOI Technology.

We report on ultraviolet (UV) sensors employing high voltage PIN lateral photodiode strings integrated into the production RF SOI (silicon on isolator) CMOS platform. The sensors were optimized for applications that require measurements of short wavelength ultraviolet (UVC) radiation under strong visible and near-infrared lights, such as UV used for sterilization purposes, e.g., COVID-19 disinfection. Responsivity above 0.1 A/W in the UVC range was achieved, and improved blindness to visible and infrared (IR) light demonstrated by implementing back-end dielectric layers transparent to the UV, in combination with differential sensing circuits with polysilicon UV filters. Degradation of the developed sensors under short wavelength UV was investigated and design and operation regimes allowing decreased degradation were discussed. Compared with other embedded solutions, the current design is implemented in a mass-production CMOS SOI technology, without additional masks, and has high sensitivity in UVC.

NAGase sensing in 3% milk: FET-based specific and label-free sensing in ultra-small samples of high ionic strength and high concentration of non-specific proteins.

Biosensing with biological field-effect transistors (bioFETs) is a promising technology toward specific, label-free, and multiplexed sensing in ultra-small samples. The current study employs the field-effect meta-nano-channel biosensor (MNC biosensor) for the detection of the enzyme N-acetyl-beta-D-glucosaminidase (NAGase), a biomarker for milk cow infections. The measurements are performed in a 0.5 µL drops of 3% commercial milk spiked with NAGase concentrations in the range of 30.3 aM-3.03 µM (Note that there is no background NAGase concentration in commercial milk). Specific and label-free sensing of NAGase is demonstrated with a limit-of-detection of 30.3 aM, a dynamic range of 11 orders of magnitude and with excellent linearity and sensitivity. Additional two important research outcomes are reported. First, the ionic strength of the examined milk is ∼120 mM which implies a bulk Debye screening length <1 nm. Conventionally, a 1 nm Debye length excludes the possibility of sensing with a recognition layer composed of surface bound anti-NAGase antibodies with a size of ∼10 nm. This apparent contradiction is removed considering the ample literature reporting antibody adsorption in a predominantly surface tilted configuration (side-on, flat-on, etc.). Secondly, milk contains a non-specific background protein concentration of 33 mg/ml, in addition to considerable amounts of micron-size heterogeneous fat structures. The reported sensing was performed without the customarily exercised surface blocking and without washing of the non-specific signal. This suggests that the role of non-specific adsorption to the BioFET sensing signal needs to be further evaluated. Control measurements are reported.

From sensing interactions to controlling the interactions: a novel approach to obtain biological transistors for specific and label-free immunosensing.

Antibody-antigen interactions are shaped by the solution pH level, ionic strength, and electric fields, if present. In biological field-effect transistors (BioFETs), the interactions take place at the sensing area in which the pH level, ionic strength and electric fields are determined by the Poisson-Boltzmann equation and the boundary conditions at the solid-solution interface and the potential applied at the solution electrode. The present study demonstrates how a BioFET solution electrode potential affects the sensing area double layer pH level, ionic strength, and electric fields and in this way shapes the biological interactions at the sensing area. We refer to this as 'active sensing'. To this end, we employed the meta-nano-channel (MNC) BioFET and demonstrate how the solution electrode can determine the antibody-antigen equilibrium constant and allows the control and tuning of the sensing performance in terms of the dynamic range and limit-of-detection. In the current work, we employed this method to demonstrate the specific and label-free sensing of Alpha-Fetoprotein (AFP) molecules from 0.5 µL drops of 1 : 100 diluted serum. AFP was measured during pregnancy as part of the prenatal screening program for fetal anomalies, chromosomal abnormalities, and abnormal placentation. We demonstrate AFP sensing with a limit-of-detection of 10.5 aM and a dynamic range of 6 orders of magnitude in concentration. Extensive control measurements are reported.

A new approach towards the Debye length challenge for specific and label-free biological sensing based on field-effect transistors.

Biologically-modified field-effect transistors (BioFETs) are promising platforms for specific and label-free biosensing due to their sub-micron footprint suitable for multiplexing in ultra-small samples, low noise levels, inherent amplification, etc. Debye screening length is a well-recognized challenge for any BioFET-based technology. The screening length is the smallest at the double layer, where the solution ion population is higher than the bulk population. One way to address the small double layer screening length is to electrostatically modify the potential drop across the solution such as to minimize the potential drop over the double layer. This will decrease the population of the double layer ions and increase the screening length. However, this is not possible with BioFETs as voltage application to the reference electrode simultaneously affects both the double layer and the BioFET conducting channel. The current study addresses the screening length challenge with the novel Meta-Nano-Channel (MNC) BioFET. The MNC BioFET, which is fabricated in a complementary-metal-oxide-silicon (CMOS) process, allows decoupling of the electrostatics of the double layer from the electrodynamics of the conducting channel. The study explores the mechanism of sensing with the MNC BioFET, and demonstrates how the double layer can be electrostatically tuned in order to optimize the screening length without affecting the conducting channel. Finally, specific and label-free sensing of 10 ng ml-1 prostate specific antigen (PSA) is demonstrated. It is shown that by electrostatically increasing the double layer screening length, the sensing signal increases from 70 mV to 133 mV.

Charge Transport and the Nature of Traps in Oxygen Deficient Tantalum Oxide.

Optical and transport properties of nonstoichiometric tantalum oxide thin films grown by ion beam deposition were investigated in order to understand the dominant charge transport mechanisms and reveal the nature of traps. The TaOx films composition was analyzed by X-ray photoelectron spectroscopy and by quantum-chemistry simulation. From the optical absorption and photoluminescence measurements and density functional theory simulations, it was concluded that the 2.75 eV blue luminescence excited in a TaOx by 4.45 eV photons, originates from oxygen vacancies. These vacancies are also responsible for TaOx conductivity. The thermal trap energy of 0.85 eV determined from the transport experiments coincides with the half of the Stokes shift of the blue luminescence band. It is argued that the dominant charge transport mechanism in TaOx films is phonon-assisted tunneling between the traps.