RESUMEN
In Fig. 1 of the version of this Letter originally published, the word 'Subtract' was missing from the green box to the left of panel f. This has now been corrected in all versions of the Letter.
RESUMEN
In order to obtain a fundamental understanding of the interplay between charge, spin, orbital and lattice degrees of freedom in magnetic materials and to predict and control their physical properties1-3, experimental techniques are required that are capable of accessing local magnetic information with atomic-scale spatial resolution. Here, we show that a combination of electron energy-loss magnetic chiral dichroism 4 and chromatic-aberration-corrected transmission electron microscopy, which reduces the focal spread of inelastically scattered electrons by orders of magnitude when compared with the use of spherical aberration correction alone, can achieve atomic-scale imaging of magnetic circular dichroism and provide element-selective orbital and spin magnetic moments atomic plane by atomic plane. This unique capability, which we demonstrate for Sr2FeMoO6, opens the door to local atomic-level studies of spin configurations in a multitude of materials that exhibit different types of magnetic coupling, thereby contributing to a detailed understanding of the physical origins of magnetic properties of materials at the highest spatial resolution.
RESUMEN
In this paper we introduce an approach for precise orientation mapping of crystalline specimens by means of transmission electron microscopy. We show that local orientation values can be reconstructed from experimental dark-field image data acquired at different specimen tilts and multiple Bragg reflections. By using the suggested method it is also possible to determine the orientation of the tilt axis with respect to the image or diffraction pattern. The method has been implemented to automatically acquire the necessary data and then map crystal orientation for a given region of interest. We have applied this technique to a specimen prepared from a Ni-based super-alloy CMSX-4. The functionality and limitations of our method are discussed and compared to those of other techniques available.
RESUMEN
In this paper we introduce an approach for simultaneous thickness and orientation mapping of crystalline samples by means of transmission electron microscopy. We show that local thickness and orientation values can be extracted from experimental dark-field (DF) image data acquired at different specimen tilts. The method has been implemented to automatically acquire the necessary data and then map thickness and crystal orientation for a given region of interest. We have applied this technique to a specimen prepared from a commercial semiconductor device, containing multiple 22 nm technology transistor structures. The performance and limitations of our method are discussed and compared to those of other techniques available.