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Phys Rev Lett
; 85(5): 1012-5, 2000 Jul 31.
Artículo
en Inglés
| MEDLINE
| ID: mdl-10991462
RESUMEN
Zinc oxide, a wide-band-gap semiconductor with many technological applications, typically exhibits n-type conductivity. The cause of this conductivity has been widely debated. A first-principles investigation, based on density functional theory, produces strong evidence that hydrogen acts as a source of conductivity: it can incorporate in high concentrations and behaves as a shallow donor. This behavior is unexpected and very different from hydrogen's role in other semiconductors, in which it acts only as a compensating center and always counteracts the prevailing conductivity. These insights have important consequences for control and utilization of hydrogen in oxides in general.
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Phys Rev B Condens Matter
; 43(14): 11913-11919, 1991 May 15.
Artículo
en Inglés
| MEDLINE
| ID: mdl-9996966
19.
Phys Rev B Condens Matter
; 49(7): 4579-4585, 1994 Feb 15.
Artículo
en Inglés
| MEDLINE
| ID: mdl-10011380
20.
Phys Rev B Condens Matter
; 53(17): 11292-11295, 1996 May 01.
Artículo
en Inglés
| MEDLINE
| ID: mdl-9982734