SESAM mode-locked Yb:GdScO3 laser.

We report on the investigation of continuous-wave (CW) and SEmiconductor Saturable Absorber Mirror (SESAM) mode-locked operation of a Yb:GdScO3 laser. Using a single-transverse-mode, fiber-coupled InGaAs laser diode at 976 nm as a pump source, the Yb:GdScO3 laser delivers 343 mW output power at 1062 nm in the CW regime, which corresponds to a slope efficiency of 52%. Continuous tuning is possible across a wavelength range of 84 nm (1027-1111 nm). Using a commercial SESAM to initiate mode-locking and stabilize soliton-type pulse shaping, the Yb:GdScO3 laser produces pulses as short as 42 fs at 1065.9 nm, with an average output power of 40 mW at 66.89 MHz. To the best of our knowledge, this is the first demonstration of passively mode-locking with Yb:GdScO3 crystal.

Growth, spectroscopy and laser operation of Tm,Ho:GdScO3 perovskite crystal.

We report on the growth, polarized spectroscopy and first laser operation of an orthorhombic (space group Pnma) Tm3+,Ho3+-codoped gadolinium orthoscandate (GdScO3) perovskite-type crystal. A single crystal of 3.76 at.% Tm, 0.35 at.% Ho:GdScO3 was grown by the Czochralski method. Its polarized absorption and fluorescence properties were studied revealing a broadband emission around 2 µm. The parameters of the Tm3+ ↔ Ho3+ energy transfer was quantified, P28 = 1.30 × 10-22 cm3µs-1, and P71 = 0.99 × 10-23 cm3µs-1, and the thermal equilibrium lifetime was measured to be 3.5 ms. The crystal-field splitting of Tm3+ and Ho3+ multiplets in Cs symmetry sites of the perovskite structure was determined by low-temperature spectroscopy and the mechanism of spectral line broadening is discussed. The continuous-wave Tm,Ho:GdScO3 laser generated 1.16 W at ∼2.1 µm with a slope efficiency of 50.5%, a laser threshold of 184 mW, a linear laser polarization (E || c) and a spatially single-mode output. The Tm,Ho:GdScO3 crystal is promising for broadly tunable and femtosecond mode-locked lasers emitting above 2 µm.

Spectroscopy and efficient dual-wavelength laser performances of a Nd:GYSAG crystal.

We reported on the spectral properties and dual-wavelength laser performances of a novel, to the best of our knowledge, Nd:Gd1.8Y1.2ScAl4O12 (Nd:GYSAG) crystal for the first time. The absorption spectra, emission spectra, and fluorescence lifetime were systematically investigated. Further, a continuous-wavelength (CW) laser output power up to 5.02 W was obtained under an absorbed pump power of 9.45 W with slope and optical-to-optical efficiencies of 59.4% and 53.1%, respectively, at 1061.2 and 1063.2 nm. A stable passively Q-switched (PQS) laser employing Cr:YAG as a saturable absorber (SA) was realized. The maximum average output power of 0.756 W with a slope of near 34.4% was obtained with the pulse width, pulse energy, and peak power of 14.0 ns, 128.1 µJ, and 9.15 kW, respectively. The results indicate that the Nd:GYSAG crystal is an excellent laser medium for generating a high-efficiency dual-wavelength laser and has potential in terahertz (THz) laser generation.

Structures and Properties of High-Concentration Doped Th:CaF2 Single Crystals for Solid-State Nuclear Clock Materials.

Thorium-doped vacuum ultraviolet (VUV) transparent crystals is a promising candidate for establishing a solid-state nuclear clock. Here, we report the research results on high-concentration doping of 232Th:CaF2 single crystals. The structures, defects, and VUV transmittance performances of highly doped Th:CaF2 crystals are investigated by theoretical and experimental methods. The defect configurations formed by Th and the charge compensation mechanism (Ca vacancy or interstitial F atoms) located at its first nearest neighbor position are mainly considered and studied. The preferred defect configuration is identified according to the doping concentration dependence of structural changes caused by the defects and the formation energies of the defects at different Ca or F chemical potentials. The cultivated Th:CaF2 crystals maintain considerable high VUV transmittance levels while accommodating high doping concentrations, showcasing an exceptional comprehensive performance. The transmittances of 1-mm-thick samples with doping concentrations of 1.91 × 1020 and 2.76 × 1020 cm-3 can reach ∼62% and 53% at 150 nm, respectively. The VUV transmittance exhibits a weak negative doping concentration dependence. The system factors that may cause distortion and additional deterioration of the VUV transmittance are discussed. Balancing and controlling the impacts of various factors will be of great significance for fully exploiting the advantages of Th:CaF2 and other Th-doped crystals for a solid-state nuclear optical clock.