RESUMEN
Thin film transistors (TFTs) as the core devices for displays, are widely used in various fields including ultra-high-resolution displays, flexible displays, wearable electronic skins and memory devices, especially in terms of sensors. TFTs have now started to move towards miniaturization. Similarly to MOSFETs problem, traditional planar structure TFTs have difficulty in reducing the channel's length sub-1µm under the existing photolithography technology. Vertical channel thin film transistors (V-TFTs) are proposed. It is an effective solution to overcome the miniaturization limit of traditional planar TFTs. So, we summarize the different aspects of VTFTs. Firstly, this paper introduces the structure types, key parameters, and the impact of different preparation methods in devices of V-TFTs. Secondly, an overview of the research progress of V-TFTs' active layer materials in recent years, the characteristics of V-TFTs and their application in examples has proved the enormous application potential of V-TFT in sensing. Finally, in addition to the advantages of V-TFTs, the current technical challenge and their potential solutions are put forward, and the future development trend of this new structure of V-TFTs is proposed.
RESUMEN
The artificial synapse array with an electrolyte-gated transistor (EGT) as an array unit presents considerable potential for neuromorphic computation. However, the integration of EGTs faces the drawback of the conflict between the polymer electrolytes and photo-lithography. This study presents a scheme based on a lateral-gate structure to realize high-density integration of EGTs and proposes the integration of 100 × 100 EGTs into a 2.5 × 2.5 cm2 glass, with a unit density of up to 1600 devices cm-2 . Furthermore, an electrolyte framework is developed to enhance the array performance, with ionic conductivity of up to 2.87 × 10-3 S cm-1 owing to the porosity of zeolitic imidazolate frameworks-67. The artificial synapse array realizes image processing functions, and exhibits high performance and homogeneity. The handwriting recognition accuracy of a representative device reaches 92.80%, with the standard deviation of all the devices being limited to 9.69%. The integrated array and its high performance demonstrate the feasibility of the scheme and provide a solid reference for the integration of EGTs.
RESUMEN
Photothermal slippery surface has broad applications in many research fields for noncontacting, loss-free, and flexible droplet manipulation capability. In this work, with specific morphologic parameters and modified base materials doped by Fe3O4, a high-durability photothermal slippery surface (HD-PTSS) was proposed and implemented based on ultraviolet (UV) lithography to achieve repeatability of more than 600 cycles. The instantaneous response time and transport speed of HD-PTSS were related to near-infrared ray (NIR) powers and droplet volume. Meanwhile, the durability was closely related to the morphology of HD-PTSS, which impacts the recovering of a lubricant layer. The droplet manipulation mechanism of HD-PTSS was discussed in depth, and the Marangoni effect was found to be the key factor for the durability of HD-PTSS.
RESUMEN
Freestanding, flexible and open through-hole polymeric micro- and nanostructured membranes were successfully fabricated over large areas (>16 cm2) via solvent removal of sacrificial scaffolds filled with polymer resin by spontaneous capillary flow. Most of the polymeric membranes were obtained through a rapid UV curing processes via cationic or free radical UV polymerisation. Free standing microstructured membranes were fabricated across a range of curable polymer materials, including: EBECRYL3708 (radical UV polymerisation), CUVR1534 (cationic UV polymerisation) UV lacquer, fluorinated perfluoropolyether urethane methacrylate UV resin (MD700), optical adhesive UV resin with high refractive index (NOA84) and medical adhesive UV resin (1161-M). The present method was also extended to make a thermal set polydimethylsiloxane (PDMS) membranes. The pore sizes for the as-fabricated membranes ranged from 100 µm down to 200 nm and membrane thickness could be varied from 100 µm down to 10 µm. Aspect ratios as high as 16.7 were achieved for the 100 µm thick membranes for pore diameters of approximately 6 µm. Wide-area and uniform, open through-hole 30 µm thick membranes with 15 µm pore size were fabricated over 44 × 44 mm2 areas. As an application example, arrays of Au nanodots and Pd nanodots, as small as 130 nm, were deposited on Si substrates using a nanoaperture polymer through-hole membrane as a stencil.