Buried amorphous-layer impact on dislocation densities in silicon.
J Microsc
; 224(Pt 1): 104-7, 2006 Oct.
Article
en En
| MEDLINE
| ID: mdl-17100918
ABSTRACT
The impact of amorphous layers on dislocation densities in silicon piezo-resistors was investigated by means of transmission electron microscopy and chemical etching. Mechanical bevel polishing at a shallow angle and selective etching were applied to assess the dislocation depth distributions. It was found that, despite the presence of additional defects after recrystallization, the initial presence of a buried amorphous layer reduced, after annealing, the dislocation density in the depletion region of a p-n junction, compared with the case of a shallower, surface amorphous layer.
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Colección:
01-internacional
Banco de datos:
MEDLINE
Idioma:
En
Revista:
J Microsc
Año:
2006
Tipo del documento:
Article
País de afiliación:
Polonia