New approach to cathodoluminescence studies in application to InGaN/GaN laser diode degradation.

ABSTRACT

Cathodoluminescence (CL) studies are widely applied in semi-conductor science and technology. However, for structures with a p-n junction the CL spatial distribution can be strongly affected by internal current flows of the electron beam induced current generated within the structure. This influence is the investigated in application to CL studies of degradation in aged laser diodes with InGaN multiquantum wells.