Formation of silicon nanodots via ion beam sputtering of ultrathin gold thin film coatings on Si.
Nanoscale Res Lett
; 6(1): 403, 2011 May 31.
Article
en En
| MEDLINE
| ID: mdl-21711934
ABSTRACT
Ion beam sputtering of ultrathin film Au coatings used as a physical catalyst for self-organization of Si nanostructures has been achieved by tuning the incident particle energy. This approach holds promise as a scalable nanomanufacturing parallel processing alternative to candidate nanolithography techniques. Structures of 11- to 14-nm Si nanodots are formed with normal incidence low-energy Ar ions of 200 eV and fluences above 2 × 1017 cm-2. In situ surface characterization during ion irradiation elucidates early stage ion mixing migration mechanism for nanodot self-organization. In particular, the evolution from gold film islands to the formation of ion-induced metastable gold silicide followed by pure Si nanodots formed with no need for impurity seeding.
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1
Colección:
01-internacional
Banco de datos:
MEDLINE
Idioma:
En
Revista:
Nanoscale Res Lett
Año:
2011
Tipo del documento:
Article
País de afiliación:
Estados Unidos