Periodically changing morphology of the growth interface in Si, Ge, and GaP nanowires.
Phys Rev Lett
; 107(2): 025503, 2011 Jul 08.
Article
en En
| MEDLINE
| ID: mdl-21797618
ABSTRACT
Nanowire growth in the standard <111> direction is assumed to occur at a planar catalyst-nanowire interface, but recent reports contradict this picture. Here we show that a nonplanar growth interface is, in fact, a general phenomenon. Both III-V and group IV nanowires show a distinct region at the trijunction with a different orientation whose size oscillates during growth, synchronized with step flow. We develop an explicit model for this structure that agrees well with experiment and shows that the oscillations provide a direct visualization of catalyst supersaturation. We discuss the implications for wire growth and structure.
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Colección:
01-internacional
Banco de datos:
MEDLINE
Idioma:
En
Revista:
Phys Rev Lett
Año:
2011
Tipo del documento:
Article
País de afiliación:
Estados Unidos