Temperature dependent optical properties of amorphous silicon for diode laser crystallization.
Opt Express
; 20(23): A856-63, 2012 Nov 05.
Article
en En
| MEDLINE
| ID: mdl-23326833
ABSTRACT
The temperature dependent optical parameters n and k of amorphous silicon deposited by electron beam evaporation were determined at the wavelength of 808 nm. This was achieved by fitting an optical model of the layer system to reflection values of a fs-laser beam. From n(T) and k(T) the absorption of a-Si layers as depending on thickness and temperature were calculated for this diode laser wavelength. By heating the layers to 600 °C the absorption can be increased by a factor of 4 as compared to room temperature, which allows for diode laser crystallization of layers down to 80 nm in thickness.
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Colección:
01-internacional
Banco de datos:
MEDLINE
Tipo de estudio:
Prognostic_studies
Idioma:
En
Revista:
Opt Express
Asunto de la revista:
OFTALMOLOGIA
Año:
2012
Tipo del documento:
Article
País de afiliación:
Alemania