Experimental setup for investigating silicon solid phase crystallization at high temperatures.
Opt Express
; 21(14): 16296-304, 2013 Jul 15.
Article
en En
| MEDLINE
| ID: mdl-23938481
ABSTRACT
An experimental setup is presented to measure and interpret the solid phase crystallization of amorphous silicon thin films on glass at very high temperatures of about 800 °C. Molybdenum-SiO(2)-silicon film stacks were irradiated by a diode laser with a well-shaped top hat profile. From the relevant thermal and optical parameters of the system the temperature evolution can be calculated accurately. A time evolution of the laser power was applied which leads to a temperature constant in time in the center of the sample. Such a process will allow the observation and interpretation of solid phase crystallization in terms of nucleation and growth in further work.
Texto completo:
1
Colección:
01-internacional
Banco de datos:
MEDLINE
Asunto principal:
Refractometría
/
Silicio
/
Cristalografía
/
Calefacción
/
Rayos Láser
Idioma:
En
Revista:
Opt Express
Asunto de la revista:
OFTALMOLOGIA
Año:
2013
Tipo del documento:
Article
País de afiliación:
Alemania