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Strain-Modulated Bandgap and Piezo-Resistive Effect in Black Phosphorus Field-Effect Transistors.
Zhang, Zuocheng; Li, Likai; Horng, Jason; Wang, Nai Zhou; Yang, Fangyuan; Yu, Yijun; Zhang, Yu; Chen, Guorui; Watanabe, Kenji; Taniguchi, Takashi; Chen, Xian Hui; Wang, Feng; Zhang, Yuanbo.
Afiliación
  • Li L; Department of Physics, University of California at Berkeley , Berkeley, California 94720, United States.
  • Horng J; Department of Physics, University of California at Berkeley , Berkeley, California 94720, United States.
  • Wang NZ; Collaborative Innovation Center of Advanced Microstructures , Nanjing 210093, China.
  • Chen G; Department of Physics, University of California at Berkeley , Berkeley, California 94720, United States.
  • Watanabe K; National Institute for Materials Science , 1-1 Namiki, Tsukuba, 305-0044, Japan.
  • Taniguchi T; National Institute for Materials Science , 1-1 Namiki, Tsukuba, 305-0044, Japan.
  • Chen XH; Collaborative Innovation Center of Advanced Microstructures , Nanjing 210093, China.
  • Wang F; Department of Physics, University of California at Berkeley , Berkeley, California 94720, United States.
  • Zhang Y; Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.
Nano Lett ; 17(10): 6097-6103, 2017 10 11.
Article en En | MEDLINE | ID: mdl-28853900
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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2017 Tipo del documento: Article
Texto completo
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2017 Tipo del documento: Article