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Effect of Interface Traps on the Device Performance of InGaAs-Based Gate-All-Around Tunneling Field-Effect Transistors.
Jang, Won Douk; Yoon, Young Jun; Cho, Min Su; Kim, Bo Gyeong; Kang, D In Man.
Afiliación
  • Jang WD; School of Electronics Engineering Kyungpook National University, Daegu 41566, Republic of Korea.
  • Yoon YJ; School of Electronics Engineering Kyungpook National University, Daegu 41566, Republic of Korea.
  • Cho MS; School of Electronics Engineering Kyungpook National University, Daegu 41566, Republic of Korea.
  • Kim BG; School of Electronics Engineering Kyungpook National University, Daegu 41566, Republic of Korea.
  • Kang DIM; School of Electronics Engineering Kyungpook National University, Daegu 41566, Republic of Korea.
J Nanosci Nanotechnol ; 19(10): 6036-6042, 2019 Oct 01.
Article en En | MEDLINE | ID: mdl-31026904
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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: J Nanosci Nanotechnol Año: 2019 Tipo del documento: Article
Texto completo
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: J Nanosci Nanotechnol Año: 2019 Tipo del documento: Article