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Observation of the antiferromagnetic spin Hall effect.
Chen, Xianzhe; Shi, Shuyuan; Shi, Guoyi; Fan, Xiaolong; Song, Cheng; Zhou, Xiaofeng; Bai, Hua; Liao, Liyang; Zhou, Yongjian; Zhang, Hanwen; Li, Ang; Chen, Yanhui; Han, Xiaodong; Jiang, Shan; Zhu, Zengwei; Wu, Huaqiang; Wang, Xiangrong; Xue, Desheng; Yang, Hyunsoo; Pan, Feng.
Afiliación
  • Chen X; MOE Key Laboratory of Advanced Materials, School of Materials Science and Engineering, Beijing Innovation Center for Future Chips, Tsinghua University, Beijing, China.
  • Shi S; Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore.
  • Shi G; Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore.
  • Fan X; NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, Singapore, Singapore.
  • Song C; The Key Lab for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou, China.
  • Zhou X; MOE Key Laboratory of Advanced Materials, School of Materials Science and Engineering, Beijing Innovation Center for Future Chips, Tsinghua University, Beijing, China. songcheng@mail.tsinghua.edu.cn.
  • Bai H; MOE Key Laboratory of Advanced Materials, School of Materials Science and Engineering, Beijing Innovation Center for Future Chips, Tsinghua University, Beijing, China.
  • Liao L; MOE Key Laboratory of Advanced Materials, School of Materials Science and Engineering, Beijing Innovation Center for Future Chips, Tsinghua University, Beijing, China.
  • Zhou Y; MOE Key Laboratory of Advanced Materials, School of Materials Science and Engineering, Beijing Innovation Center for Future Chips, Tsinghua University, Beijing, China.
  • Zhang H; MOE Key Laboratory of Advanced Materials, School of Materials Science and Engineering, Beijing Innovation Center for Future Chips, Tsinghua University, Beijing, China.
  • Li A; The Key Lab for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou, China.
  • Chen Y; Beijing Key Lab of Microstructure and Property of Solids, Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing, China.
  • Han X; Beijing Key Lab of Microstructure and Property of Solids, Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing, China.
  • Jiang S; Beijing Key Lab of Microstructure and Property of Solids, Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing, China.
  • Zhu Z; Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan, China.
  • Wu H; Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan, China.
  • Wang X; Institute of Microelectronics, Tsinghua University, Beijing, China.
  • Xue D; Physics Department, The Hong Kong University of Science and Technology, Hong Kong, China.
  • Yang H; The Key Lab for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou, China.
  • Pan F; Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore. eleyang@nus.edu.sg.
Nat Mater ; 20(6): 800-804, 2021 Jun.
Article en En | MEDLINE | ID: mdl-33633354
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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Nat Mater Asunto de la revista: CIENCIA / QUIMICA Año: 2021 Tipo del documento: Article País de afiliación: China
Texto completo
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Nat Mater Asunto de la revista: CIENCIA / QUIMICA Año: 2021 Tipo del documento: Article País de afiliación: China