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Simple Ge/Si bilayer junction-based doping-less tunnel field-effect transistor.
Kim, Min-Won; Kim, Ji-Hun; Kim, Hyeon-Jun; Seo, Jeong-Woo; Park, Jea-Gun; Hong, Jin-Pyo.
Afiliación
  • Kim MW; Department of Electronic Engineering, Hanyang University, Seoul, Republic of Korea.
  • Kim JH; Department of Electronic Engineering, Hanyang University, Seoul, Republic of Korea.
  • Kim HJ; Department of Electronic Engineering, Hanyang University, Seoul, Republic of Korea.
  • Seo JW; Research Institute of Natural Science, Department of Physics, Hanyang University, Seoul, Republic of Korea.
  • Park JG; Department of Electronic Engineering, Hanyang University, Seoul, Republic of Korea.
  • Hong JP; Research Institute of Natural Science, Department of Physics, Hanyang University, Seoul, Republic of Korea.
Nanotechnology ; 34(9)2022 Dec 13.
Article en En | MEDLINE | ID: mdl-36541520
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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Nanotechnology Año: 2022 Tipo del documento: Article
Texto completo
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Nanotechnology Año: 2022 Tipo del documento: Article