Your browser doesn't support javascript.
loading
Sputtered L10-FePd and its Synthetic Antiferromagnet on Si/SiO2 Wafers for Scalable Spintronics.
Lyu, Deyuan; Shoup, Jenae E; Huang, Dingbin; García-Barriocanal, Javier; Jia, Qi; Echtenkamp, William; Rojas, Geoffrey A; Yu, Guichuan; Zink, Brandon R; Wang, Xiaojia; Gopman, Daniel B; Wang, Jian-Ping.
Afiliación
  • Lyu D; Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455, USA.
  • Shoup JE; Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.
  • Huang D; Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN 55455, USA.
  • García-Barriocanal J; Characterization Facility, University of Minnesota, Minneapolis, MN 55455, USA.
  • Jia Q; Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455, USA.
  • Echtenkamp W; Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455, USA.
  • Rojas GA; Characterization Facility, University of Minnesota, Minneapolis, MN 55455, USA.
  • Yu G; Characterization Facility, University of Minnesota, Minneapolis, MN 55455, USA.
  • Zink BR; Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455, USA.
  • Wang X; Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN 55455, USA.
  • Gopman DB; Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.
  • Wang JP; Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455, USA.
Adv Funct Mater ; 23(18)2023 May.
Article en En | MEDLINE | ID: mdl-37200959
ABSTRACT
As a promising alternative to the mainstream CoFeB/MgO system with interfacial perpendicular magnetic anisotropy (PMA), L10-FePd and its synthetic antiferromagnet (SAF) structure with large crystalline PMA can support spintronic devices with sufficient thermal stability at sub-5 nm sizes. However, the compatibility requirement of preparing L10-FePd thin films on Si/SiO2 wafers is still unmet. In this paper, we prepare high-quality L10-FePd and its SAF on Si/SiO2 wafers by coating the amorphous SiO2 surface with an MgO(001) seed layer. The prepared L10-FePd single layer and SAF stack are highly (001)-textured, showing strong PMA, low damping, and sizeable interlayer exchange coupling, respectively. Systematic characterizations, including advanced X-ray diffraction measurement and atomic resolution-scanning transmission electron microscopy, are conducted to explain the outstanding performance of L10-FePd layers. A fully-epitaxial growth that starts from MgO seed layer, induces the (001) texture of L10-FePd, and extends through the SAF spacer is observed. This study makes the vision of scalable spintronics more practical.
Palabras clave
Texto completo
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Adv Funct Mater Año: 2023 Tipo del documento: Article País de afiliación: Estados Unidos
Texto completo
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Adv Funct Mater Año: 2023 Tipo del documento: Article País de afiliación: Estados Unidos