Investigation of the Degradation Mechanism of SiC MOSFET Subjected to Multiple Stresses.

Dong, Huifen; Wu, Yunxia; Li, Chan; Xu, Hai

Dong, Huifen; Wu, Yunxia; Li, Chan; Xu, Hai.

Afiliación

Dong H; College of Electronic Information and Automation, Civil Aviation University of China, Tianjin 300300, China.
Wu Y; Tianjin Aviation Equipment Safety and Airworthiness Technology Innovation Center, Tianjin 300300, China.
Li C; College of Electronic Information and Automation, Civil Aviation University of China, Tianjin 300300, China.
Xu H; College of Electronic Information and Automation, Civil Aviation University of China, Tianjin 300300, China.

Micromachines (Basel) ; 14(7)2023 Jul 21.

Article en En | MEDLINE | ID: mdl-37512783

Palabras clave

SiC MOSFET; finite element analysis (FEA); multi-stress

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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Micromachines (Basel) Año: 2023 Tipo del documento: Article País de afiliación: China

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