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High Efficiency and Low Roll-Off Pure-Red Perovskite LED Enabled by Simultaneously Inhibiting Auger and Trap Recombination of Quantum Dots.
Guo, Jie; Xie, Mingyuan; Li, Hangren; Zhang, Lin; Zhang, Linxing; Zhang, Xiaoyu; Zheng, Weitao; Tian, Jianjun.
Afiliación
  • Guo J; Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China.
  • Xie M; Key Laboratory of Automobile Materials Ministry of Education, School of Materials Science and Engineering, Jilin University, Changchun 130012, China.
  • Li H; Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China.
  • Zhang L; School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, No. 2006, Xiyuan Ave, West Hi-Tech Zone, Chengdu 610054, China.
  • Zhang L; Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China.
  • Zhang X; Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China.
  • Zheng W; Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China.
  • Tian J; Key Laboratory of Automobile Materials Ministry of Education, School of Materials Science and Engineering, Jilin University, Changchun 130012, China.
Nano Lett ; 24(21): 6410-6416, 2024 May 29.
Article en En | MEDLINE | ID: mdl-38767286
ABSTRACT
CsPbI3 perovskite quantum dots (QDs) could achieve pure-red emission by reducing their size, but the increased exciton binding energy (EB) and surface defects for the small-sized QDs (SQDs) cause severe Auger and trap recombinations, thus worsening their electroluminescence (EL) performance. Herein, we utilize the dangling bonds of the SQDs as a driving force to accelerate KI dissolution to solve its low solubility in nonpolar solvents, thereby allowing K+ and I- to bond to the surface of SQDs. The EB of the SQDs was decreased from 305 to 51 meV because of the attraction of K+ to electrons, meanwhile surface vacancies were passivated by K+ and I-. The Auger and trap recombinations were simultaneously suppressed by this difunctional ligand. The SQD-based light-emitting diode showed a stable pure-red EL peak of 639 nm, an external quantum efficiency of 25.1% with low roll-off, and a brightness of 5934 cd m-2.
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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2024 Tipo del documento: Article País de afiliación: China

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2024 Tipo del documento: Article País de afiliación: China