Infrared stimulated emission with an ultralow threshold from low-dislocation-density InN films grown on a vicinal GaN substrate.
Fundam Res
; 2(5): 794-798, 2022 Sep.
Article
en En
| MEDLINE
| ID: mdl-38933130
ABSTRACT
Near-infrared stimulated emission from a high-quality InN layer under optical pumping was observed with a threshold excitation power density of 0.3 and 4 kW cm-2 at T = 8 and 77 K, respectively. To achieve such a low threshold power density, vicinal GaN substrates were used to reduce the edge-component threading dislocation (ETD) density of the InN film. Cross-sectional transmission electron microscopy images reveal that the annihilation of ETDs can be divided into two steps, and the ETD density can be reduced to approximately 5 × 108 cm-2 near the surface of the 5-µm-thick film. The well-resolved phonon replica of the band-to-band emission in the photoluminescence spectra at 9 K confirm the high quality of the InN film. As a result, the feasibility of InN-based photonic structures and the underlying physics of their growth and emission properties are demonstrated.
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Colección:
01-internacional
Banco de datos:
MEDLINE
Idioma:
En
Revista:
Fundam Res
Año:
2022
Tipo del documento:
Article
País de afiliación:
China