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Tepotinib is one of the key drugs for MET exon 14-skipping mutation-positive non-small cell lung cancer (NSCLC). The main adverse event of tepotinib treatment is edema. Rash is a rare adverse event, affecting only 0.7% of patients. We report a case of successful desensitization after skin rash caused by tepotinib. A 61-year-old male was treated with tepotinib 500 mg as second-line therapy for NSCLC with MET exon 14-skipping mutation. Treatment was discontinued on day 12 due to grade 3 erythema throughout the body. After improvement of the skin rash, he was started on 250 mg tepotinib with an oral antihistamine and topical steroid. Treatment was discontinued on day 11 due to skin rash exacerbation. One month of treatment-free follow-up showed skin rash improvement but lung carcinoma growth. Tepotinib desensitization therapy was started at a dose of 12.5 mg and gradually increased to 250 mg/day. The patient has since continued tepotinib treatment without skin rashes. Desensitization therapy may be effective for managing skin rash due to tepotinib.
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[Purpose] This study aimed to identify kinematic gait indicators for a fall risk screening test through quantitative comparisons of gait characteristics measured using mobile inertial sensors between faller and non-faller groups in a population of community-dwelling older people. [Participants and Methods] We enrolled 50 people aged ≥65â years who used long-term care prevention services, interviewed them to determine their fall history during the past year, and divided them into faller and non-faller groups. Gait parameters (velocity, cadence, stride length, foot height, heel strike angle, ankle joint angle, knee joint angle, and hip joint angle) were assessed using the mobile inertial sensors. [Results] Gait velocity and left and right heel strike angles were significantly lower and smaller, respectively, in the faller versus non-faller group. Receiver operating characteristic curve analysis revealed areas under the curve of 0.686, 0.722, and 0.691 for gait velocity, left heel strike angle, and right heel strike angle, respectively. [Conclusion] Gait velocity and heel strike angle during gait assessed using mobile inertial sensors may be important kinematic indicators in a fall risk screening test to estimate the likelihood of falls among community-dwelling older people.
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The crystallographic and transport properties of thin films fabricated by pulsed laser deposition and belonging to the Smy(FexNi1-x)4Sb12filled skutterudite system were studied with the aim to unveil the effect exerted by temperature and duration of thermal treatments on structural and thermoelectric features. The importance of annealing treatments in Ar atmosphere up to 523 K was recognized, and the thermal treatment performed at 473 K for 3 h was selected as the most effective in improving the material properties. With respect to the corresponding bulk compositions, a significant enhancement in phase purity, as well as an increase in electrical conductivity and a drop in room temperature thermal conductivity, were observed in annealed films. The low thermal conductivity, in particular, can be deemed as deriving from the reduced dimensionality and the consequent substrate/film interfacial stress, coupled with the nanometric grain size.
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Immunoglobulin G4 (IgG4)-related pleurisy is a rare type of IgG4-related disease. We present the case of a 69-year-old woman with left pleural effusion and elevated adenosine deaminase levels. Initially, tuberculous pleuritis was suspected; however, the bacterial cultures and polymerase chain reaction test results for tuberculosis were negative. Thoracoscopic pleural biopsy revealed dense lymphocytic infiltrates with large numbers of IgG4-positive plasma cells. The ratio of IgG4-positive to IgG-positive plasma cells exceeded 40%. The patient was diagnosed with IgG4-related disease.
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Thermoelectric technology offers great potential for converting waste heat into electrical energy and is an emission-free technique for solid-state cooling. Conventional high-performance thermoelectric materials such as Bi2Te3 and PbTe use rare or toxic elements. Sulfur is an inexpensive and nontoxic alternative to tellurium. However, achieving high efficiencies with Bi2S3 is challenging due to its high electrical resistivity that reduces its power factor. Here, we report Bi2S3 codoped with Cr and Cl to enhance its thermoelectric properties. An enhanced conductivity was achieved due to an increase in the carrier concentration by the substitution of S with Cl. High values of the Seebeck coefficients were obtained despite high carrier concentrations; this is attributed to an increase in the effective mass, resulting from the magnetic drag introduced by the magnetic Cr dopant. A peak power factor of 566 µW m-1 K-2 was obtained for a cast sample of Bi2-x/3Cr x/3S3-x Cl x with x = 0.01 at 320 K, as high as the highest values reported in the literature for sintered samples. These results support the success of codoping thermoelectric materials with isovalent magnetic and carrier concentration tuning elements to enhance the thermoelectric properties of eco-friendly materials.
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Aiming to overcome both the structural and commercial limitations of flexible thermoelectric power generators, an efficient room-temperature aqueous selenization reaction that can be completed in air within less than 1 min, to directly fabricate thin ß-Ag2 Se films consisting of perfectly crystalline and large columnar grains with both in-plane randomness and out-of-plane [201] preferred orientation, is designed. A high power factor (PF) of 2590 ± 414 µW m-1 K-2 and a figure-of-merit (zT) of 1.2 ± 0.42 are obtained from a sample with a thickness of ≈1 µm. The maximum output power density of the best 4-leg thermoelectric generator sample reach 27.6 ± 1.95 and 124 ± 8.78 W m-2 at room temperature with 30 and 60 K temperature differences, respectively, which may be useful in future flexible thermoelectric devices.
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The effect of SnO2 addition (0, 1, 2, 4 wt.%) on thermoelectric properties of c-axis oriented Al-doped ZnO thin films (AZO) fabricated by pulsed laser deposition on silica and Al2O3 substrates was investigated. The best thermoelectric performance was obtained on the AZO + 2% SnO2 thin film grown on silica, with a power factor (PF) of 211.8 µW/m·K2 at 573 K and a room-temperature (300 K) thermal conductivity of 8.56 W/m·K. PF was of the same order of magnitude as the value reported for typical AZO bulk material at the same measurement conditions (340 µW/m·K2) while thermal conductivity κ was reduced about four times.
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Filled skutterudites are currently studied as promising thermoelectric materials due to their high power factor and low thermal conductivity. The latter property, in particular, can be enhanced by adding scattering centers, such as the ones deriving from low dimensionality and the presence of interfaces. This work reports on the synthesis and characterization of thin films belonging to the Smy(FexNi1-x)4Sb12-filled skutterudite system. Films were deposited under vacuum conditions by the pulsed laser deposition (PLD) method on fused silica substrates, and the deposition temperature was varied. The effect of the annealing process was studied by subjecting a set of films to a thermal treatment for 1 h at 423 K. Electrical conductivity σ and Seebeck coefficient S were acquired by the four-probe method using a ZEM-3 apparatus performing cycles in the 348-523 K temperature range, recording both heating and cooling processes. Films deposited at room temperature required three cycles up to 523 K before being stabilized, thus revealing the importance of a proper annealing process in order to obtain reliable physical data. XRD analyses confirm the previous result, as only annealed films present a highly crystalline skutterudite not accompanied by extra phases. The power factor of annealed films is shown to be lower than in the corresponding bulk samples due to the lower Seebeck coefficients occurring in films. Room temperature thermal conductivity, on the contrary, shows values comparable to the ones of doubly doped bulk samples, thus highlighting the positive effect of interfaces on the introduction of scattering centers, and therefore on the reduction of thermal conductivity.
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Combining inorganic thermoelectric (TE) materials with conductive polymers is one promising strategy to develop flexible thermoelectric (FTE) films and devices. As most inorganic materials tried up until now in FTE composites are composed of scarce or toxic elements, and n-type FTE materials are particularly desired, we combined the abundant, inexpensive, nontoxic Zn-doped chalcopyrite (Cu1-xZnxFeS2, x = 0.01, 0.02, 0.03) with a flexible electrical network constituted by poly(3,4-ethylenedioxythiophene) polystyrenesulfonate (PEDOT:PSS) and graphene for n-type FTE films. Hybrid films from the custom design of binary Cu1-xZnxFeS2/PEDOT:PSS to the optimum design of ternary Cu0.98Zn0.02FeS2/PEDOT:PSS/graphene are characterized. Compared with the binary film, a 4-fold enhancement in electrical conductivity was observed in the ternary film, leading to a maximum power factor of â¼ 23.7 µW m-1 K-2. The optimum ternary film could preserve >80% of the electrical conductivity after 2000 bending cycles, exhibiting an exceptional flexibility due to the network constructed by PEDOT:PSS and graphene. A five-leg thermoelectric prototype made of optimum films generated a voltage of 4.8 mV with a ΔT of 13 °C. Such an evolution of an inexpensive chalcopyrite-based hybrid film with outstanding flexibility exhibits the potential for cost-sensitive FTE applications.
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Thermoelectric (TE) film has wide potential application in low-grade waste heat recovery and TE generation due to its quick response and multifunctional integration. Multi-nanocomposite is a promising method to solve the difficulty of maintaining temperature difference and achieving a high figure of merit ZT. However, the depletion layer induced by the multi-nanocomposite typically degrades performance. This study presents a simple and convenient method to solve this problem by pulse electric field (PEF). Prototypical TE Bi2 Te3 is selected as the objective film. The strong current density effect of PEF removes the depletion layer among carbon nanotubes (CNT) and Bi2 Te3 grains. Thus, the CNT nanocomposite with PEF treatment breaks the trade-off between electrical conductivity and Seebeck coefficient, achieving a power factor of 4400 µW m-1 K-2 which stabilizes after annealing effect to 2920 µW m-1 K-2 , a record for Bi2 Te3 films. Simultaneously, the self-assembled porosity decreases thermal conductivity via phonon scattering while still maintaining a high electrical conductivity of 3130 S cm-1 . Thus, the porosity helps maintain the temperature difference and thereby enables a sharp increase in output power. These results indicate that the combination of PEF and multi-nanocomposite is a new method to enhance TE performance, which would have a potential application in the commercial field.
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The reciprocity of heat transfer is a fundamental principle. However, there are few experimental studies to verify this principle. In this paper, we measured two layer samples made of ordinary metal by the laser flash method to verify the reciprocity principle. We heated and detected the different surfaces of each two layer sample to observe the reciprocal response. We also made use of areal heat diffusion time to analyze the temperature rise of two layer samples to enable to extend analysis for future multi-layer samples. This study is an important starting point to discuss whether characteristic materials obey the reciprocal principle.
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In the present study, we have focused on the elaboration of control of Te-doped CoSb3 thin films by RF magnetron sputtering which is an attractive technique for industrial development of thermoelectric (TE) thin films. We have successfully synthesized sputtering targets with a reliable approach in order to obtain high-quality films with controlled stoichiometry. TE properties were then probed and revealed a reliable n-type behavior characterized by poor electrical transport properties. Tellurium substitution was realized by co-sputtering deposition and allowed obtaining a significant enhancement of the power factor with promising values of PF ≈ 0.21 mW m-1 K-2 near room temperature. It is related to the Te doping effect which leads to an increase of the Seebeck coefficient and the electrical conductivity simultaneously. However, despite this large improvement, the properties remained far from the bulk material and further developments are necessary to improve the carrier mobility reduced by the thin film formatting.