Athermal, fabrication-tolerant Si-SiN FIR filters for a silicon photonics foundry platform.

A means of athermalizing unbalanced Mach-Zehnder interferometers on a 300 mm silicon photonics foundry platform utilizing Si and SiN layers to produce the path imbalance is demonstrated. This technique can be applied to all other forms of finite impulse response filters, such as arrayed waveguide gratings. Wafer scale performance of fabricated devices is analyzed for their expected performance in the target application: odd-even channel (de)-interleavers for dense wavelength division multiplexing links. Finally, a method is proposed to improve device performance to be more robust to fabrication variations while simultaneously maintaining athermality.

Damping of relaxation oscillations, photon-photon resonance, and tolerance to external optical feedback of III-V/SiN hybrid lasers with a dispersive narrow band mirror.

We address the stability of a tunable hybrid laser based on a III-V Reflective Semiconductor Optical Amplifier (RSOA) edge-coupled with a Silicon Photonic (SiPh) dispersive mirror through a model of time-delayed algebraic differential equations that accounts for the narrow band mirror. Our results allow to (i) analyze the stability of single mode lasing, (ii) quantify the impact of the mirror bandwidth on the damping of the laser relaxation oscillations and the emergence of photon-photon resonance, and (iii) study the tolerance of the laser to the external optical feedback. Thanks to this analysis, we find a mirror design that gives ultra-high stability up to an external feedback level of -10 dB. The aim of the work is providing a tool for understanding and interpreting the dynamics of these lasers and design configurations for isolator-free operation.

Study of nonlinear effects and self-heating in a silicon microring resonator including a Shockley-Read-Hall model for carrier recombination.

A detailed description of the non-linear effects in silicon is needed when designing ring resonators in the silicon platform. The optical field propagating in the ring waveguide is strongly absorbed due to two-photon-absorption (TPA) and free-carrier-absorption (FCA), which become more prominent with increasing the input power in the ring. We present a new approach for the modelling of non-linear effects in silicon based ring resonators. We have numerically solved the non-linear problem coupling the variation of refractive index and loss due to TPA, FCA , self-heating and Shockley-Read-Hall (SRH) theory for trap-assisted recombination process. The model is validated by reproducing experimental measurements on a ring and a racetrack resonator having different Q-factors and waveguide cross-sections. As a result, we show that the SRH recombination is the origin of the dependence of free carrier lifetime on the power circulating in the ring and how this dependence is affected by the surface trap density and trap energy level. The model is then applied to the calculation of the maximum power that can incident the silicon rings designed for the Si PIC mirror of a hybrid III-V/Si widely tunable laser.

Efficient, tunable flip-chip-integrated III-V/Si hybrid external-cavity laser array.

We demonstrate a surface-normal coupled tunable hybrid silicon laser array for the first time using passively-aligned, high-accuracy flip chip bonding. A 2x6 III-V reflective semiconductor optical amplifier (RSOA) array with integrated total internal reflection mirrors is bonded to a CMOS SOI chip with grating couplers and silicon ring reflectors to form a tunable hybrid external-cavity laser array. Waveguide-coupled wall plug efficiency (wcWPE) of 2% and output power of 3 mW has been achieved for all 12 lasers. We further improved the performance by reducing the thickness of metal/dielectric stacks and achieved 10mW output power and 5% wcWPE with the same integration techniques. This non-invasive, one-step back end of the line (BEOL) integration approach provides a promising solution to high density laser sources for future large-scale photonic integrated circuits.

Error-free operation of a polarization-insensitive 4λ x 25 Gbps silicon photonic WDM receiver with closed-loop thermal stabilization of Si microrings.

We report the first closed-loop operation of a 100 Gbps polarization-insensitive, 4-channel wavelength-tracking WDM receiver in silicon photonics platform. Error-free operation is achieved with input polarization scrambling over input wavelength change of 4.5 nm using efficient thermal tuning of Si microring demux, corresponding to greater than 60°C fluctuation in temperature.

Athermal silicon ring resonators clad with titanium dioxide for 1.3µm wavelength operation.

We investigate the athermal characteristics of silicon waveguides clad with TiO(2) designed for 1.3 µm wavelength operation. Using CMOS-compatible fabrication processes, we realize and experimentally demonstrate silicon photonic ring resonators with resonant wavelengths that vary by less than 6 pm/°C at 1.3 µm. The measured ring resonance wavelengths across the 20-50°C temperature range show nearly complete cancellation of the first-order thermo-optical effects and exhibit second-order thermo-optical effects expected from the combination of TiO(2) and Si.

Multi-octave spectral beam combiner on ultra-broadband photonic integrated circuit platform.

We present the design of a novel platform that is able to combine optical frequency bands spanning 4.2 octaves from ultraviolet to mid-wave infrared into a single, low M2 output waveguide. We present the design and realization of a key component in this platform that combines the wavelength bands of 350 nm - 1500 nm and 1500 nm - 6500 nm with demonstrated efficiency greater than 90% in near-infrared and mid-wave infrared. The multi-octave spectral beam combiner concept is realized using an integrated platform with silicon nitride waveguides and silicon waveguides. Simulated bandwidth is shown to be over four octaves, and measured bandwidth is shown over two octaves, limited by the availability of sources.

Demonstration of 12.2% wall plug efficiency in uncooled single mode external-cavity tunable Si/III-V hybrid laser.

A Si/III-V hybrid laser has been a highly sought after device for energy-efficient and cost-effective high-speed silicon photonics communication. We present a high wall-plug efficiency external-cavity hybrid laser created by integrating an independently optimized SOI ring reflector and a III-V gain chip. In our demonstration, the uncooled integrated laser achieved a waveguide-coupled wall-plug efficiency of 12.2% at room temperature with an optical output power of ~10 mW. The laser operated single-mode near 1550 nm with a linewidth of 0.22 pm. This is a tunable light source with 8 nm wavelength tuning range. A proof-of-concept laser wavelength stabilization technique has also been demonstrated. Using a simple feedback loop, we achieved mode-hop-free operation in a packaged external-cavity hybrid laser as bias current was varied by 60mA.

Heterogeneously integrated 2.0 µm CW hybrid silicon lasers at room temperature.

Here we experimentally demonstrate room temperature, continuous-wave (CW), 2.0 µm wavelength lasers heterogeneously integrated on silicon. Molecular wafer bonding of InP to Si is employed. These hybrid silicon lasers operate CW up to 35°C and emit up to 4.2 mW of single-facet CW power at room temperature. III-V tapers transfer light from a hybrid III-V/silicon optical mode into a Si waveguide mode. These lasers enable the realization of a number of sensing and detection applications in compact silicon photonic systems.

Athermal laser design.

This paper discusses circuit based and waveguide based athermalization schemes and provides some design examples of athermalized lasers utilizing fully integrated athermal components as an alternative to power hungry thermo-electric controllers (TECs), off-chip wavelength lockers or monitors with lookup tables for tunable lasers. This class of solutions is important for uncooled transmitters on silicon.

Thermal stress implications in athermal TiO2 waveguides on a silicon substrate.

Ring resonators with TiO2 core confinement factors from 0.07 to 0.42 are fabricated and measured for thermal sensitivity achieving -2.9 pm/K thermal drift in the best case. Materials used are CMOS compatible (TiO2, SiO2 and Si3N4) on a Si substrate. The under discussed role of stress in thermo-optic behavior is clearly observed when contrasting waveguides buried in SiO2 to those with etched sidewalls revealed to air. Multiphysics simulations are conducted to provide a theoretical explanation of this phenomenon in contrast to the more widely reported theories on thermo-optic behavior dominated by confinement factor.

Sidewall gratings in ultra-low-loss Si3N4 planar waveguides.

We demonstrate sidewall gratings in an ultra-low-loss Si3N4 planar waveguide platform. Through proper geometrical design we can achieve coupling constant values between 13 and 310 cm(-1). The TE waveguide propagation loss over the range of 1540 to 1570 nm is below 5.5 dB/m.