Thermal Atomic Layer Etching of MoS2 Using MoF6 and H2O.

Two-dimensional (2D) layered materials offer unique properties that make them attractive for continued scaling in electronic and optoelectronic device applications. Successful integration of 2D materials into semiconductor manufacturing requires high-volume and high-precision processes for deposition and etching. Several promising large-scale deposition approaches have been reported for a range of 2D materials, but fewer studies have reported removal processes. Thermal atomic layer etching (ALE) is a scalable processing technique that offers precise control over isotropic material removal. In this work, we report a thermal ALE process for molybdenum disulfide (MoS2). We show that MoF6 can be used as a fluorination source, which, when combined with alternating exposures of H2O, etches both amorphous and crystalline MoS2 films deposited by atomic layer deposition. To characterize the ALE process and understand the etching reaction mechanism, in situ quartz crystal microbalance (QCM), Fourier transform infrared (FTIR), and quadrupole mass spectrometry (QMS) experiments were performed. From temperature-dependent in situ QCM experiments, the mass change per cycle was -5.7 ng/cm2 at 150 °C and reached -270.6 ng/cm2 at 300 °C, nearly 50× greater. The temperature dependence followed Arrhenius behavior with an activation energy of 13 ± 1 kcal/mol. At 200 °C, QCM revealed a mass gain following exposure to MoF6 and a net mass loss after exposure to H2O. FTIR revealed the consumption of Mo-O species and formation of Mo-F and MoF x =O species following exposures of MoF6 and the reverse behavior following H2O exposures. QMS measurements, combined with thermodynamic calculations, supported the removal of Mo and S through the formation of volatile MoF2O2 and H2S byproducts. The proposed etching mechanism involves a two-stage oxidation of Mo through the ALE half-reactions. Etch rates of 0.5 Å/cycle for amorphous films and 0.2 Å/cycle for annealed films were measured by ex situ ellipsometry, X-ray reflectivity, and transmission electron microscopy. Precisely etching amorphous films and subsequently annealing them yielded crystalline, few-layer MoS2 thin films. This thermal MoS2 ALE process provides a new mechanism for fluorination-based ALE and offers a low-temperature approach for integrating amorphous and crystalline 2D MoS2 films into high-volume device manufacturing with tight thermal budgets.

Atomic-Scale View of Redox Induced Changes for Monolayer MoOx on α-TiO2(110) with Chemical-State Sensitivity.

Supported molybdenum oxide (MoOx) plays an important role in catalytic transformations from alcohol dehydrogenation to transesterification. During these reactions, molybdenum and oxygen surface species undergo structural and chemical changes. A detailed, chemical-state specific, atomic-scale structural analysis of the catalyst under redox conditions is important for improving catalytic properties. In this study, a monolayer of Mo grown on α-TiO2(110) by atomic-layer deposition is analyzed by X-ray standing wave (XSW) excited X-ray photoelectron spectroscopy (XPS). The chemical shifts for Mo 2p3/2 and O 1s peaks are used to distinguish Mo6+ from Mo4+ and surface O from bulk O. Excitation of XPS by XSW allows pinpointing the location of these surface species relative to the underlying substrate lattice. Measured 3D composite atomic density maps for the oxidized and reduced interfaces compare well with our density functional theory models and collectively create a unique view of the redox-driven dynamics for this complex catalytic structure.

Atomic-Scale Structure of Chemically Distinct Surface Oxygens in Redox Reactions.

During redox reactions, oxide-supported catalytic systems undergo structural and chemical changes. Improving subsequent catalytic properties requires an understanding of the atomic-scale structure with chemical state specificity under reaction conditions. For the case of 1/2 monolayer vanadia on α-TiO2(110), we use X-ray standing wave (XSW) excited X-ray photoelectron spectroscopy to follow the redox induced atomic positional and chemical state changes of this interface. While the resulting XSW 3D composite atomic maps include the Ti and O substrate atoms and V surface atoms, our focus in this report is on the previously unseen surface oxygen species with comparison to density functional theory predictions.

Understanding KOtBu in atomic layer deposition - in situ mechanistic studies of the KNbO3 growth process.

Functional coatings based on alkali metals have become increasingly attractive in the current shift towards sustainable technologies. While lithium-based compounds have a natural impact on batteries, other alkali metal compounds are important as replacements for toxic materials in a range of electronic devices. This is especially true for potassium, being a major component in e.g. KxNa1-xNbO3 (KNN) and KTaxNb1-xO3 (KTN), with hope to replace Pb(ZrxTi1-x)O3 (PZT) in piezo-/ferroelectric and electrooptic devices. ALD facilitates functional conformal coatings at deposition temperatures far below what is reported using other techniques and with excellent compositional control. The ALD growth of potassium-containing films using KOtBu has, however, been unpredictable. Untraditional response to the pulse composition and precursor dose, severe reproducibility issues, and very high growth per cycle are some of the puzzling features of these processes. In this article, we shed light on the growth behavior of KOtBu in ALD by in situ quartz crystal microbalance and Fourier transform infrared spectroscopy studies. We study the precursor's behavior in the technologically interesting KNbO3-process, showing how the potassium precursor strongly affects the growth of other cation precursors. We show that the strong hygroscopic nature of the intermediary potassium species has far-reaching implications throughout the growth. This helps not only to enhance the understanding of alkali metal containing compounds' growth in ALD, but also to provide the means to control the growth of novel sustainable technological materials.

Self limiting atomic layer deposition of Al2O3 on perovskite surfaces: a reality?

The feasibility of self-saturated atomic layer deposition of Al2O3 on an organolead halide perovskite (MAPbI3-xClx) surface through a well known trimethylaluminium (TMA)-water (H2O) chemistry is studied. Though the sequential dosages of reactants form films on the perovskite surfaces, a self saturated growth is never observed. Self-saturation leads to the degradation of the material. Both experimental and density functional theory calculations are carried out for complete understanding of the growth mechanism of self-limiting Al2O3 on the perovskite surface.

Supramolecular scaffolds on glass slides as sugar based rewritable sensors for bacteria.

We describe here the sugar functionalized ß-cyclodextrin-ferrocene glass slides as fully reversible bacterial biosensors under the influence of external adamantane carboxylic acid. The prototype d-mannose - E. coli ORN 178 and l-fucose - P. aeruginosa interactions serve as a model to illustrate the new approach.

Atomic layer deposited molybdenum nitride thin film: a promising anode material for Li ion batteries.

Molybdenum nitride (MoNx) thin films are deposited by atomic layer deposition (ALD) using molybdenum hexacarbonyl [Mo(CO)6] and ammonia [NH3] at varied temperatures. A relatively narrow ALD temperature window is observed. In situ quartz crystal microbalance (QCM) measurements reveal the self-limiting growth nature of the deposition that is further verified with ex situ spectroscopic ellipsometry and X-ray reflectivity (XRR) measurements. A saturated growth rate of 2 Å/cycle at 170 °C is obtained. The deposition chemistry is studied by the in situ Fourier transform infrared spectroscopy (FTIR) that investigates the surface bound reactions during each half cycle. As deposited films are amorphous as observed from X-ray diffraction (XRD) and transmission electron microscopy electron diffraction (TEM ED) studies, which get converted to hexagonal-MoN upon annealing at 400 °C under NH3 atmosphere. As grown thin films are found to have notable potential as a carbon and binder free anode material in a Li ion battery. Under half-cell configuration, a stable discharge capacity of 700 mAh g(-1) was achieved after 100 charge-discharge cycles, at a current density of 100 µA cm(-2).