Origin of giant enhancement of phase contrast in electron holography of modulation-doped n-type GaN.

The electron optical phase contrast probed by electron holography at n-n+ GaN doping steps is found to exhibit a giant enhancement, in sharp contrast to the always smaller than expected phase contrast reported for p-n junctions. We unravel the physical origin of the giant enhancement by combining off-axis electron holography data with self-consistent electrostatic potential calculations. The predominant contribution to the phase contrast is shown to arise from the doping dependent screening length of the surface Fermi-level pinning, which is induced by FIB-implanted carbon point defects below the outer amorphous shell. The contribution of the built-in potential is negligible for modulation doping and only relevant for large built-in potentials at e.g. p-n junctions. This work provides a quantitative approach to so-called dead layers at TEM lamellas.

Iuliacumite: A Novel Chemical Short-Range Order in a Two-Dimensional Wurtzite Single Monolayer InAs1-xSbx Shell on InAs Nanowires.

A chemical short-range order is found in single monolayer InAs1-xSbx shells, which inherit a wurtzite structure from the underlying InAs nanowire, instead of crystallizing in the energetically preferred zincblende structure. The chemical order is characterized by an anticorrelation ordering vector in the ⟨112̅0⟩ direction and arises from strong Sb-Sb repulsive interactions along the atomic chains in the ⟨112̅0⟩ direction.

Resistive switching in optoelectronic III-V materials based on deep traps.

Resistive switching random access memories (ReRAM) are promising candidates for energy efficient, fast, and non-volatile universal memories that unite the advantages of RAM and hard drives. Unfortunately, the current ReRAM materials are incompatible with optical interconnects and wires. Optical signal transmission is, however, inevitable for next generation memories in order to overcome the capacity-bandwidth trade-off. Thus, we present here a proof-of-concept of a new type of resistive switching realized in III-V semiconductors, which meet all requirements for the implementation of optoelectronic circuits. This resistive switching effect is based on controlling the spatial positions of vacancy-induced deep traps by stimulated migration, opening and closing a conduction channel through a semi-insulating compensated surface layer. The mechanism is widely applicable to opto-electronically usable III-V compound semiconductors.

Correction of nonlinear lateral distortions of scanning probe microscopy images.

A methodology for the correction of scanning probe microscopy image distortions is demonstrated. It is based on the determination of displacement vectors from the measurement of a calibration sample. By moving the pixels of the distorted scanning probe microscopy image along the displacement vectors an almost complete correction of the nonlinear, time independent distortions is achieved.

Electronically nonalloyed state of a statistical single atomic layer semiconductor alloy.

Using atomically and momentum resolved scanning tunneling microscopy and spectroscopy, we demonstrate that a two-dimensional (2D) √3 × âˆš3 semiconducting Ga-Si single atomic alloy layer exhibits an electronic structure with atomic localization and which is different at the Si and Ga atom sites. No indication of an interaction or an electronic intermixing and formation of a new alloy band structure is present, as if no alloying happened. The electronic localization is traced back to the lack of intra alloy bonds due to the 2D atomically confined structure of the alloy overlayer.

In situ manipulation of scanning tunneling microscope tips without tip holder.

A design for a manipulator system for manipulating bare scanning tunneling microscopy (STM) tips without any tip holder is presented. The extremely stiff and rigid system consists of an ultrahigh vacuum compatible fully three-dimensionally movable gripper module driven by stepping motors and piezomotors. The tips are clamped by hardened tool steel gripper jaws, which are controlled by a stepping motor through levers. The system allows the reproducible manipulation of bare tungsten tips made of wires with diameters of 0.25 nm and having length of only up to 3 mm without damaging the tip or the STM. The tip manipulators' advantage is that the total mass of the scanning piezotube is reduced by removing the mass of a separate tip holder. Thereby, it becomes possible to further increase the resonance frequencies of the STM.

Coulomb energy determination of a single Si dangling bond.

Determination of the Coulomb energy of single point defects is essential because changing their charge state critically affects the properties of materials. Based on a novel approach that allows us to simultaneously identify a point defect and to monitor the occupation probability of its electronic state, we unambiguously measure the charging energy of a single Si dangling bond with tunneling spectroscopy. Comparing the experimental result with tight-binding calculations highlights the importance of the particular surrounding of the localized state on the effective charging energy.

Manganese adlayers on i-Al-Pd-Mn quasicrystal: growth and electronic structure.

Pseudomorphic growth of thin elemental metal films is often observed on a variety of crystalline solids. On quasicrystalline surfaces with their complex structure and the absence of translational periodicity, the situation is different since elemental metals do not exhibit quasicrystalline order, and hence the specific interaction between overlayer and substrate is decisive. Here we study the growth of manganese films on an icosahedral i-Al-Pd-Mn alloy with a view to establishing the growth mode and electronic structure. Although we observe an exponential intensity variation of the adlayer and substrate related x-ray photoemission spectroscopy (XPS) peaks, low energy electron diffraction (LEED) shows that Mn adlayers do not exhibit quasicrystallinity. The detailed structure of the Mn 2p core level line reveals considerable electronic structure differences between the quasicrystalline and elemental metal environment. Evidence of a substantial local magnetic moment on the Mn atoms in the overlayer (about 2.8  µ(B)) is obtained from the Mn 3s exchange splitting.

Scanning tunneling spectroscopy of Ag films: the effect of periodic versus quasiperiodic modulation.

By using scanning tunneling spectroscopy to probe a silver thin film that contains both periodic and quasiperiodic modulation, and by using Fourier analysis, we unravel the influences of individual Fourier components of the scattering potential (periodic versus quasiperiodic) on the electronic structure of a one-dimensional quasiperiodically modulated thin Ag film. Along the periodically modulated direction, a Bragg reflection-induced energy gap is observed in k space. On the other hand, the exotic E vs k spectrum with many minigaps was observed along the quasiperiodic direction.

Spontaneous 2D accumulation of charged Be dopants in GaAs p-n superlattices.

In a classical view, abrupt dopant profiles in semiconductors tend to be smoothed out by diffusion due to concentration gradients and repulsive screened Coulomb interactions between the charged dopants. We demonstrate, however, using cross-sectional scanning tunneling microscopy and secondary ion mass spectroscopy, that charged Be dopant atoms in GaAs p-n superlattices spontaneously accumulate and form two-dimensional dopant layers. These are stabilized by reduced repulsive screened Coulomb interactions between the charged dopants arising from the two-dimensional quantum mechanical confinement of charge carriers.

Nonicosahedral equilibrium overlayers of icosahedral quasicrystals.

We demonstrate that icosahedral Al-Pd-Mn quasicrystals can have nonicosahedrally ordered thermodynamic equilibrium overlayers. The formation of orthorhombic or decagonal equilibrium surface structures is determined by the phase equilibrium of the ternary alloy at given composition and temperature as well as by the surface acting as nucleation site. Nonequilibrium steady-state orthorhombic and hexagonal structures can also be derived with the same methodology when taking preferential evaporation into account. The results describe consistently all presently observed surface structures.

Direct evidence for shallow acceptor states with nonspherical symmetry in GaAs.

We investigate the energy and symmetry of Zn and Be dopant-induced acceptor states in GaAs using cross-sectional scanning tunnelling microscopy (STM) and spectroscopy at low temperatures. The ground and first excited states are found to have a nonspherical symmetry. In particular, the first excited acceptor state has a T(d) symmetry. Its major contribution to the STM empty-state images allows us to explain the puzzling triangular shaped contrast observed in the empty-state STM images of acceptor impurities in III-V semiconductors.

Building Pb nanomesas with atomic-layer precision.

We demonstrate a novel scheme for manipulating metallic nanostructures involving a macroscopic number of atoms, yet with precise control in their local structures. The scheme entails a two-step process: (a) a triggering step using a scanning tunneling microscope, followed by (b) self-driven and self-limiting mass-transfer process. By using this scheme, we construct Pb nanomesas on Si(111) substrates whose thickness can be controlled with atomic-layer precision. The kinetic barrier for the mass transfer and the underlying mechanism behind this novel manipulation are determined.

Quasicrystalline epitaxial single element monolayers on icosahedral Al-pd-mn and decagonal Al-ni-co quasicrystal surfaces.

Single element quasicrystalline monolayers were prepared by deposition of antimony and bismuth on the fivefold surface of icosahedral Al71.5Pd21Mn8.5 and the tenfold surface of decagonal Al71.8Ni14.8Co13.4. Elastic helium atom scattering and low energy electron diffraction of the monolayers show Bragg peaks at the bulk derived positions of the clean surfaces, revealing highly ordered quasicrystalline epitaxial films. Their adatom densities of (0.9+/-0.2)x10(15) cm(-2) and (0.8+/-0.2)x10(15) cm(-2) on Al-Pd-Mn and Al-Ni-Co, respectively, correspond to roughly one adatom per Al atom of the quasicrystalline substrate surfaces.

Quantitative determination of the metastability of flat Ag overlayers on GaAs(110).

Atomically flat ultrathin Ag films on GaAs(110) can be formed through a kinetic pathway. However, such films are metastable and will transform to 3D islands upon high temperature annealing. Using scanning tunneling microscopy, we have measured quantitatively the layer-resolved metastability of flat Ag overlayers as they evolve toward their stable state, and deduced the corresponding kinetic barrier the system has to overcome in reaching the stable state. These results indicate that the metastability of the Ag overlayer is defined by the quantum nature of the conduction electrons confined within the overlayer.