RESUMEN
In the quantum anomalous Hall effect, quantized Hall resistance and vanishing longitudinal resistivity are predicted to result from the presence of dissipationless, chiral edge states and an insulating two-dimensional bulk, without requiring an external magnetic field. Here, we explore the potential of this effect in magnetic topological insulator thin films for metrological applications. Using a cryogenic current comparator system, we measure quantization of the Hall resistance to within one part per million and, at lower current bias, longitudinal resistivity under 10 mΩ at zero magnetic field. Increasing the current density past a critical value leads to a breakdown of the quantized, low-dissipation state, which we attribute to electron heating in bulk current flow. We further investigate the prebreakdown regime by measuring transport dependence on temperature, current, and geometry, and find evidence for bulk dissipation, including thermal activation and possible variable-range hopping.
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We study the electronic transport across an electrostatically gated lateral junction in a HgTe quantum well, a canonical 2D topological insulator, with and without an applied magnetic field. We control the carrier density inside and outside a junction region independently and hence tune the number and nature of 1D edge modes propagating in each of those regions. Outside the bulk gap, the magnetic field drives the system to the quantum Hall regime, and chiral states propagate at the edge. In this regime, we observe fractional plateaus that reflect the equilibration between 1D chiral modes across the junction. As the carrier density approaches zero in the central region and at moderate fields, we observe oscillations in the resistance that we attribute to Fabry-Perot interference in the helical states, enabled by the broken time reversal symmetry. At higher fields, those oscillations disappear, in agreement with the expected absence of helical states when band inversion is lifted.
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In Coulomb drag, a current flowing in one conductor can induce a voltage across an adjacent conductor via the Coulomb interaction. The mechanisms yielding drag effects are not always understood, even though drag effects are sufficiently general to be seen in many low-dimensional systems. In this Letter, we observe Coulomb drag in a Coulomb-coupled double quantum dot and, through both experimental and theoretical arguments, identify cotunneling as essential to obtaining a correct qualitative understanding of the drag behavior.
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Quantum critical systems derive their finite-temperature properties from the influence of a zero-temperature quantum phase transition. The paradigm is essential for understanding unconventional high-Tc superconductors and the non-Fermi liquid properties of heavy fermion compounds. However, the microscopic origins of quantum phase transitions in complex materials are often debated. Here we demonstrate experimentally, with support from numerical renormalization group calculations, a universal crossover from quantum critical non-Fermi liquid behaviour to distinct Fermi liquid ground states in a highly controllable quantum dot device. Our device realizes the non-Fermi liquid two-channel Kondo state, based on a spin-1/2 impurity exchange-coupled equally to two independent electronic reservoirs. On detuning the exchange couplings we observe the Fermi liquid scale T*, at energies below which the spin is screened conventionally by the more strongly coupled channel. We extract a quadratic dependence of T* on gate voltage close to criticality, and validate an asymptotically exact description of the universal crossover between strongly correlated non-Fermi liquid and Fermi liquid states.
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We report a nearly ideal quantum anomalous Hall effect in a three-dimensional topological insulator thin film with ferromagnetic doping. Near zero applied magnetic field we measure exact quantization in the Hall resistance to within a part per 10 000 and a longitudinal resistivity under 1 Ω per square, with chiral edge transport explicitly confirmed by nonlocal measurements. Deviations from this behavior are found to be caused by thermally activated carriers, as indicated by an Arrhenius law temperature dependence. Using the deviations as a thermometer, we demonstrate an unexpected magnetocaloric effect and use it to reach near-perfect quantization by cooling the sample below the dilution refrigerator base temperature in a process approximating adiabatic demagnetization refrigeration.
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The electronic properties of graphene are described by a Dirac Hamiltonian with a four-fold symmetry of spin and valley. This symmetry may yield novel fractional quantum Hall (FQH) states at high magnetic field depending on the relative strength of symmetry-breaking interactions. However, observing such states in transport remains challenging in graphene, as they are easily destroyed by disorder. In this work, we observe in the first two Landau levels the two-flux composite-fermion sequences of FQH states between each integer filling factor. In particular, the odd-numerator fractions appear between filling factors 1 and 2, suggesting a broken-valley symmetry, consistent with our observation of a gap at charge neutrality and zero field. Contrary to our expectations, the evolution of gaps in a parallel magnetic field suggests that states in the first Landau level are not spin-polarized even up to very large out-of-plane fields.
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We report on transport measurements of dual-gated, single-layer graphene devices in the quantum Hall regime, allowing for independent control of the filling factors in adjoining regions. Progress in device quality allows us to study scattering between edge states when the fourfold degeneracy of the Landau level is lifted by electron correlations, causing edge states to be spin and/or valley polarized. In this new regime, we observe a dramatic departure from the equilibration seen in more disordered devices: edge states with opposite spins propagate without mixing. As a result, the degree of equilibration inferred from transport can reveal the spin polarization of the ground state at each filling factor. In particular, the first Landau level is shown to be spin polarized at half filling, providing an independent confirmation of a conclusion of Young et al. [Nat. Phys. 8, 550 (2012). The conductance in the bipolar regime is strongly suppressed, indicating that copropagating edge states, even with the same spin, do not equilibrate along PN interfaces. We attribute this behavior to the formation of an insulating ν = 0 stripe at the PN interface.
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The fate of the low-temperature conductance at the charge-neutrality (Dirac) point in a single sheet of graphene on boron nitride is investigated down to 20 mK. As the temperature is lowered, the peak resistivity diverges with a power-law behavior and becomes as high as several megohms per square at the lowest temperature, in contrast with the commonly observed saturation of the conductivity. As a perpendicular magnetic field is applied, our device remains insulating and directly transitions to the broken-valley-symmetry, ν=0 quantum Hall state, indicating that the insulating behavior we observe at zero magnetic field is a result of broken valley symmetry. Finally we discuss the possible origins of this effect.
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We report on our design of a scanning gate microscope housed in a cryogen-free dilution refrigerator with a base temperature of 15 mK. The recent increase in efficiency of pulse tube cryocoolers has made cryogen-free systems popular in recent years. However, this new style of cryostat presents challenges for performing scanning probe measurements, mainly as a result of the vibrations introduced by the cryocooler. We demonstrate scanning with root-mean-square vibrations of 0.8 nm at 3 K and 2.1 nm at 15 mK in a 1 kHz bandwidth with our design. Using Coulomb blockade thermometry on a GaAs/AlGaAs gate-defined quantum dot, we demonstrate an electron temperature of 45 mK.
Asunto(s)
Microscopía Electrónica de Rastreo/instrumentación , Microscopía de Túnel de Rastreo/instrumentación , Criopreservación , Electrones , Diseño de Equipo , Congelación , Magnetismo , Microscopía de Fuerza Atómica/instrumentación , Microscopía de Fuerza Atómica/métodos , Microscopía Electrónica de Rastreo/métodos , Microscopía de Túnel de Rastreo/métodos , Oscilometría/métodos , TemperaturaRESUMEN
We report measurements of the Kondo effect in a double quantum dot, where the orbital states act as pseudospin states whose degeneracy contributes to Kondo screening. Standard transport spectroscopy as a function of the bias voltage on both dots shows a zero-bias peak in conductance, analogous to that observed for spin Kondo in single dots. Breaking the orbital degeneracy splits the Kondo resonance in the tunneling density of states above and below the Fermi energy of the leads, with the resonances having different pseudospin character. Using pseudospin-resolved spectroscopy, we demonstrate the pseudospin character by observing a Kondo peak at only one sign of the bias voltage. We show that even when the pseudospin states have very different tunnel rates to the leads, a Kondo temperature can be consistently defined for the double quantum dot system.
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We report on transport properties of Josephson junctions in hybrid superconducting-topological insulator devices, which show two striking departures from the common Josephson junction behavior: a characteristic energy that scales inversely with the width of the junction, and a low characteristic magnetic field for suppressing supercurrent. To explain these effects, we propose a phenomenological model which expands on the existing theory for topological insulator Josephson junctions.
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We report the observation of Coulomb blockade in a quantum dot contacted by two quantum point contacts each with a single fully transmitting mode, a system thought to be well described without invoking Coulomb interactions. Below 50 mK we observe a periodic oscillation in the conductance of the dot with gate voltage, corresponding to a residual quantization of charge. From the temperature and magnetic field dependence, we infer the oscillations are mesoscopic Coulomb blockade, a type of Coulomb blockade caused by electron interference in an otherwise open system.
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We report low-temperature, high-field magnetotransport measurements of SrTiO(3) gated by an ionic gel electrolyte. A saturating resistance upturn and negative magnetoresistance that signal the emergence of the Kondo effect appear for higher applied gate voltages. This observation, enabled by the wide tunability of the ionic gel-applied electric field, promotes the interpretation of the electric field-effect-induced 2D electron system in SrTiO(3) as an admixture of magnetic Ti(3+) ions, i.e., localized and unpaired electrons, and delocalized electrons that partially fill the Ti 3d conduction band.
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Transport through potential barriers in graphene is investigated using a set of metallic gates capacitively coupled to graphene to modulate the potential landscape. When a gate-induced potential step is steep enough, disorder becomes less important and the resistance across the step is in quantitative agreement with predictions of Klein tunneling of Dirac fermions up to a small correction. We also perform magnetoresistance measurements at low magnetic fields and compare them to recent predictions.
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Scaling laws and universality play an important role in our understanding of critical phenomena and the Kondo effect. We present measurements of nonequilibrium transport through a single-channel Kondo quantum dot at low temperature and bias. We find that the low-energy Kondo conductance is consistent with universality between temperature and bias and is characterized by a quadratic scaling exponent, as expected for the spin-1/2 Kondo effect. We show that the nonequilibrium Kondo transport measurements are well described by a universal scaling function with two scaling parameters.
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Compressibility measurements are performed on a quantum point contact (QPC). Screening due to mobile charges in the QPC is measured quantitatively, using a second point contact. These measurements are performed from pinch-off through the opening of the first few modes in the QPC. While the measured signal closely matches a Thomas-Fermi-Poisson prediction, deviations from the classical behavior are apparent near the openings of the different modes. Density functional calculations attribute the deviations to a combination of a diverging density of states at the opening of each one-dimensional mode and exchange interaction, which is strongest for the first mode.
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The peculiar nature of electron scattering in graphene is among many exciting theoretical predictions for the physical properties of this material. To investigate electron scattering properties in a graphene plane, we have created a gate-tunable potential barrier within a single-layer graphene sheet. We report measurements of electrical transport across this structure as the tunable barrier potential is swept through a range of heights. When the barrier is sufficiently strong to form a bipolar junction (n-p-n or p-n-p) within the graphene sheet, the resistance across the barrier sharply increases. We compare these results to predictions for both diffusive and ballistic transport, as the barrier rises on a length scale comparable to the mean free path. Finally, we show how a magnetic field modifies transport across the barrier.
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Some of the most intriguing problems in solid-state physics arise when the motion of one electron dramatically affects the motion of surrounding electrons. Traditionally, such highly correlated electron systems have been studied mainly in materials with complex transition metal chemistry. Over the past decade, researchers have learned to confine one or a few electrons within a nanometre-scale semiconductor 'artificial atom', and to understand and control this simple system in detail(3). Here we combine artificial atoms to create a highly correlated electron system within a nano-engineered semiconductor structure. We tune the system in situ through a quantum phase transition between two distinct states, each a version of the Kondo state, in which a bound electron interacts with surrounding mobile electrons. The boundary between these competing Kondo states is a quantum critical point-namely, the exotic and previously elusive two-channel Kondo state, in which electrons in two reservoirs are entangled through their interaction with a single localized spin.
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We measure the low-field Hall resistivity of a magnetically doped two-dimensional electron gas as a function of temperature and electrically gated carrier density. Comparing these results with the carrier density extracted from Shubnikov-de Haas oscillations reveals an excess Hall resistivity that increases with decreasing temperature. This excess Hall resistivity qualitatively tracks the paramagnetic polarization of the sample, in analogy to the ferromagnetic anomalous Hall effect. The data are consistent with skew scattering of carriers by disorder near the crossover to localization.
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We measure the spin splitting in a magnetic field B of localized states in single-electron transistors using a new method, inelastic spin-flip cotunneling. Because it involves only internal excitations, this technique gives the most precise value of the Zeeman energy Delta=/g/mu(B)B. In the same devices we also measure the splitting with B of the Kondo peak in differential conductance. The Kondo splitting appears only above a threshold field as predicted by theory. However, the magnitude of the Kondo splitting at high fields exceeds 2/g/mu(B)B in disagreement with theory.