RESUMEN
We report the ferromagnetism in a new bulk form Cu-based magnetic semiconductor (La,Ba)(Cu,Mn)SO, which is iso-structural to the prototypical iron-based 1111-type superconductor LaFeAsO. Starting from the parent compound LaCuSO, carriers are introduced via the substitutions of La for Ba while spins are introduced via the substitutions of Cu for Mn. Spins are mediated by carriers, which develops into the long range ferromagnetic ordering. The maximum Curie temperature [Formula: see text] reaches up to [Formula: see text] 170 K with the doping levels of 10% Ba and 5% Mn. By comparing to the (La,Sr)(Cu,Mn)SO where Sr and Mn are co-doped into LaCuSO, we demonstrate that negative chemical pressure would suppress the ferromagnetic ordering.
RESUMEN
Iron-chalcogenide superconductors FeSe1-xSx possess unique electronic properties such as nonmagnetic nematic order and its quantum critical point. The nature of superconductivity with such nematicity is important for understanding the mechanism of unconventional superconductivity. A recent theory suggested the possible emergence of a fundamentally new class of superconductivity with the so-called Bogoliubov Fermi surfaces (BFSs) in this system. However, such an ultranodal pair state requires broken time-reversal symmetry (TRS) in the superconducting state, which has not been observed experimentally. Here, we report muon spin relaxation (µSR) measurements in FeSe1-xSx superconductors for 0 ≤ x ≤ 0.22 covering both orthorhombic (nematic) and tetragonal phases. We find that the zero-field muon relaxation rate is enhanced below the superconducting transition temperature Tc for all compositions, indicating that the superconducting state breaks TRS both in the nematic and tetragonal phases. Moreover, the transverse-field µSR measurements reveal that the superfluid density shows an unexpected and substantial reduction in the tetragonal phase (x > 0.17). This implies that a significant fraction of electrons remain unpaired in the zero-temperature limit, which cannot be explained by the known unconventional superconducting states with point or line nodes. The TRS breaking and the suppressed superfluid density in the tetragonal phase, together with the reported enhanced zero-energy excitations, are consistent with the ultranodal pair state with BFSs. The present results reveal two different superconducting states with broken TRS separated by the nematic critical point in FeSe1-xSx, which calls for the theory of microscopic origins that account for the relation between nematicity and superconductivity.
RESUMEN
We report the effect of chemical pressure on the ferromagnetic ordering of the recently reported n-type diluted magnetic semiconductor Ba(Zn[Formula: see text]Co[Formula: see text])[Formula: see text]As[Formula: see text] which has a maximum [Formula: see text] [Formula: see text] 45 K. Doping Sb into As-site and Sr into Ba-site induces negative and positive chemical pressure, respectively. While conserving the tetragonal crystal structure and n-type carriers, the unit cell volume shrink by [Formula: see text] 0.3[Formula: see text] with 15[Formula: see text] Sr doping, but drastically increase the ferromagnetic transition temperature by 18[Formula: see text] to 53 K. Our experiment unequivocally demonstrate that the parameters of Zn(Co)As[Formula: see text] tetrahedra play a vital role in the formation of ferromagnetic ordering in the Ba(Zn,Co)[Formula: see text]As[Formula: see text] DMS.
RESUMEN
We report the discovery of a new fluoride-arsenide bulk diluted magnetic semiconductor (Ba,K)F(Zn,Mn)As with the tetragonal ZrCuSiAs-type structure which is identical to that of the "1111" iron-based superconductors. The joint hole doping via (Ba,K) substitution &spin doping via (Zn,Mn) substitution results in ferromagnetic order with Curie temperature up to 30 K and demonstrates that the ferromagnetic interactions between the localized spins are mediated by the carriers. Muon spin relaxation measurements confirm the intrinsic nature of the long range magnetic order in the entire volume in the ferromagnetic phase. This is the first time that a diluted magnetic semiconductor with decoupled spin and charge doping is achieved in a fluoride compound. Comparing to the isostructure oxide counterpart of LaOZnSb, the fluoride DMS (Ba,K)F(Zn,Mn)As shows much improved semiconductive behavior that would be benefit for further application developments.
RESUMEN
RENiO3 (RE=rare-earth element) and V2O3 are archetypal Mott insulator systems. When tuned by chemical substitution (RENiO3) or pressure (V2O3), they exhibit a quantum phase transition (QPT) between an antiferromagnetic Mott insulating state and a paramagnetic metallic state. Because novel physics often appears near a Mott QPT, the details of this transition, such as whether it is first or second order, are important. Here, we demonstrate through muon spin relaxation/rotation (µSR) experiments that the QPT in RENiO3 and V2O3 is first order: the magnetically ordered volume fraction decreases to zero at the QPT, resulting in a broad region of intrinsic phase separation, while the ordered magnetic moment retains its full value until it is suddenly destroyed at the QPT. These findings bring to light a surprising universality of the pressure-driven Mott transition, revealing the importance of phase separation and calling for further investigation into the nature of quantum fluctuations underlying the transition.
RESUMEN
Diluted magnetic semiconductors have received much attention due to their potential applications for spintronics devices. A prototypical system (Ga,Mn)As has been widely studied since the 1990s. The simultaneous spin and charge doping via hetero-valent (Ga(3+),Mn(2+)) substitution, however, resulted in severely limited solubility without availability of bulk specimens. Here we report the synthesis of a new diluted magnetic semiconductor (Ba(1-x)K(x))(Zn(1-y)Mn(y))(2)As(2), which is isostructural to the 122 iron-based superconductors with the tetragonal ThCr(2)Si(2) (122) structure. Holes are doped via (Ba(2+), K(1+)) replacements, while spins via isovalent (Zn(2+),Mn(2+)) substitutions. Bulk samples with x=0.1-0.3 and y=0.05-0.15 exhibit ferromagnetic order with T(C) up to 180 K, which is comparable to the highest T(C) for (Ga,Mn)As and significantly enhanced from T(C) up to 50 K of the '111'-based Li(Zn,Mn)As. Moreover, ferromagnetic (Ba,K)(Zn,Mn)(2)As(2) shares the same 122 crystal structure with semiconducting BaZn(2)As(2), antiferromagnetic BaMn(2)As(2) and superconducting (Ba,K)Fe(2)As(2), which makes them promising for the development of multilayer functional devices.
RESUMEN
In a prototypical ferromagnet (Ga,Mn)As based on a III-V semiconductor, substitution of divalent Mn atoms into trivalent Ga sites leads to severely limited chemical solubility and metastable specimens available only as thin films. The doping of hole carriers via (Ga,Mn) substitution also prohibits electron doping. To overcome these difficulties, Masek et al. theoretically proposed systems based on a I-II-V semiconductor LiZnAs, where isovalent (Zn,Mn) substitution is decoupled from carrier doping with excess/deficient Li concentrations. Here we show successful synthesis of Li(1+y)(Zn(1-x)Mn(x))As in bulk materials. Ferromagnetism with a critical temperature of up to 50 K is observed in nominally Li-excess (y=0.05-0.2) compounds with Mn concentrations of x=0.02-0.15, which have p-type metallic carriers. This is presumably due to excess Li in substitutional Zn sites. Semiconducting LiZnAs, ferromagnetic Li(Zn,Mn)As, antiferromagnetic LiMnAs, and superconducting LiFeAs systems share square lattice As layers, which may enable development of novel junction devices in the future.