Iuliacumite: A Novel Chemical Short-Range Order in a Two-Dimensional Wurtzite Single Monolayer InAs1-xSbx Shell on InAs Nanowires.

A chemical short-range order is found in single monolayer InAs1-xSbx shells, which inherit a wurtzite structure from the underlying InAs nanowire, instead of crystallizing in the energetically preferred zincblende structure. The chemical order is characterized by an anticorrelation ordering vector in the ⟨112̅0⟩ direction and arises from strong Sb-Sb repulsive interactions along the atomic chains in the ⟨112̅0⟩ direction.

Composition modulation by twinning in InAsSb nanowires.

We observe a composition modulated axial heterostructure in zincblende (ZB) InAs0.90Sb0.10 nanowires initiated by pseudo-periodic twin boundaries using scanning tunneling microscopy. The twin boundaries exhibit four planes with reduced Sb concentration due to a lower Sb incorporation during lateral overgrowth of a 4H wurtzite as compared to a ZB stacking sequence. We anticipate that this leads to compositional band offsets in addition to known structural band offsets present between 4H and ZB polytypes, changing the band alignment from type II to type I.

Estimation of π-π Electronic Couplings from Current Measurements.

The π-π interactions between organic molecules are among the most important parameters for optimizing the transport and optical properties of organic transistors, light-emitting diodes, and (bio-) molecular devices. Despite substantial theoretical progress, direct experimental measurement of the π-π electronic coupling energy parameter t has remained an old challenge due to molecular structural variability and the large number of parameters that affect the charge transport. Here, we propose a study of π-π interactions from electrochemical and current measurements on a large array of ferrocene-thiolated gold nanocrystals. We confirm the theoretical prediction that t can be assessed from a statistical analysis of current histograms. The extracted value of t ≈35 meV is in the expected range based on our density functional theory analysis. Furthermore, the t distribution is not necessarily Gaussian and could be used as an ultrasensitive technique to assess intermolecular distance fluctuation at the subangström level. The present work establishes a direct bridge between quantum chemistry, electrochemistry, organic electronics, and mesoscopic physics, all of which were used to discuss results and perspectives in a quantitative manner.

NanoARPES of twisted bilayer graphene on SiC: absence of velocity renormalization for small angles.

The structural and electronic properties of twisted bilayer graphene (TBG) on SiC(000) grown by Si flux-assisted molecular beam epitaxy were investigated using scanning tunneling microscopy (STM) and angle-resolved photoelectron spectroscopy with nanometric spatial resolution. STM images revealed a wide distribution of twist angles between the two graphene layers. The electronic structure recorded in single TBG grains showed two closely-spaced Dirac π bands associated to the two stacked layers with respective twist angles in the range 1-3°. The renormalization of velocity predicted in previous theoretical calculations for small twist angles was not observed.

On the mechanical and electronic properties of thiolated gold nanocrystals.

We present a quantitative exploration, combining experiment and simulation, of the mechanical and electronic properties, as well as the modifications induced by an alkylthiolated coating, at the single nanoparticle (NP) level. We determined the response of the NPs to external pressure in a controlled manner using an atomic force microscope tip. We found a strong reduction in their Young's modulus, as compared to bulk gold, and a significant influence of strain on the electronic properties of the alkylthiolated NPs. Electron transport measurements of tiny molecular junctions (NP/alkylthiol/CAFM tip) show that the effective tunnelling barrier through the adsorbed monolayer strongly decreases by increasing the applied load, which translates in a remarkable and unprecedented increase in the tunnel current. These observations are successfully explained using simulations based on the finite element analysis (FEA) and first-principles calculations that permit one to consider the coupling between the mechanical response of the system and the electric dipole variations at the interface.

Narrowing the length distribution of Ge nanowires.

Synthesis of nanostructures of uniform size is fundamental because the size distribution directly affects their physical properties. We present experimental data demonstrating a narrowing effect on the length distribution of Ge nanowires synthesized by the Au-catalyzed molecular beam epitaxy on Si substrates. A theoretical model is developed that is capable of describing this puzzling behavior. It is demonstrated that the direction of the diffusion flux of sidewall adatoms is size dependent and has a major effect on the growth rate of differently sized nanowires. We also show that there exists a fundamental limitation on the maximum nanowire length that can be achieved by molecular beam epitaxy where the direction of the beam is close to the growth axis.

Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient.

by performing electrodeless time-resolved microwave conductivity measurements, the efficiency of charge carrier generation, their mobility, and the decay kinetics on photoexcitation were studied in arrays of Si nanowires grown by the vapor-liquid-solid mechanism. Large enhancements in the magnitude of the photoconductance and charge carrier lifetime are found depending on the incorporation of impurities during the growth. They are explained by the internal electric field that builds up, due to higher doped sidewalls, as revealed by detailed analysis of the nanowire morphology and chemical composition.

Dynamic behavior of amplitude detection Kelvin force microscopy in ultrahigh vacuum.

The acquisition rate of all scanning probe imaging techniques with feedback control is limited by the dynamic response of the control loops. Performance criteria are the control loop bandwidth and the output signal noise power spectral density. Depending on the acceptable noise level, it may be necessary to reduce the sampling frequency below the bandwidth of the control loop. In this work, the frequency response of a vacuum Kelvin force microscope with amplitude detection (AM-KFM) using a digital signal processing (DSP) controller is characterized and optimized. Then, the main noise source and its impact on the output signal is identified. A discussion follows on how the system design can be optimized with respect to output noise. Furthermore, the interaction between Kelvin and distance control loop is studied, confirming the beneficial effect of KFM on topography artefact reduction in the frequency domain. The experimental procedure described here can be generalized to other systems and allows to locate the performance limitations.

Kelvin force microscopy at the second cantilever resonance: an out-of-vacuum crosstalk compensation setup.

We investigate the gap-voltage control loop in a Kelvin force microscopy setup with simultaneous non-contact topography imaging. The Kelvin controller electrostatically excites the second resonance of the cantilever at about 6.3 times the first resonance frequency and adjusts the DC component of the gap voltage to cancel the oscillation amplitude at this frequency, while the non-contact topography imaging is based on a frequency control loop that maintains a constant frequency of the mechanically excited first resonance of the cantilever by adjusting the tip-sample separation. Due to the self-excitation of the first resonance in our setup, it has to be considered that the electrostatic excitation at the second resonance frequency is applied to a closed feedback loop and cannot be considered as a simple superposition to the oscillation at the first resonance frequency. In particular, special care has to be taken about internal capacitive crosstalk between the tip bias and the cantilever deflection output signal. It is shown that such a coupling cannot be corrected by subtraction of a constant offset at the demodulator output since the crosstalk is sent into the self-excitation loop and is multiplied by the closed loop transfer function. We present a circuit that actively compensates, outside the vacuum environment, the internal crosstalk by adding to the deflection output a dephased fraction of the electrostatic excitation signal.

Direct evidence for shallow acceptor states with nonspherical symmetry in GaAs.

We investigate the energy and symmetry of Zn and Be dopant-induced acceptor states in GaAs using cross-sectional scanning tunnelling microscopy (STM) and spectroscopy at low temperatures. The ground and first excited states are found to have a nonspherical symmetry. In particular, the first excited acceptor state has a T(d) symmetry. Its major contribution to the STM empty-state images allows us to explain the puzzling triangular shaped contrast observed in the empty-state STM images of acceptor impurities in III-V semiconductors.