Understanding the Electronic Transport of Al-Si and Al-Ge Nanojunctions by Exploiting Temperature-Dependent Bias Spectroscopy.

Understanding the electronic transport of metal-semiconductor heterojunctions is of utmost importance for a wide range of emerging nanoelectronic devices like adaptive transistors, biosensors, and quantum devices. Here, we provide a comparison and in-depth discussion of the investigated Schottky heterojunction devices based on Si and Ge nanowires contacted with pure single-crystal Al. Key for the fabrication of these devices is the selective solid-state metal-semiconductor exchange of Si and Ge nanowires into Al, delivering void-free, single-crystal Al contacts with flat Schottky junctions, distinct from the bulk counterparts. Thereof, a systematic comparison of the temperature-dependent charge carrier injection and transport in Si and Ge by means of current-bias spectroscopy is visualized by 2D colormaps. Thus, it reveals important insights into the operation mechanisms and regimes that cannot be exploited by conventional single-sweep output and transfer characteristics. Importantly, it was found that the Al-Si system shows symmetric effective Schottky barrier (SB) heights for holes and electrons, whereas the Al-Ge system reveals a highly transparent contact for holes due to Fermi level pinning close to the valence band with charge carrier injection saturation due to a thinned effective SB. Moreover, thermionic field emission limits the overall electron conduction, indicating a distinct SB for electrons.

The Schottky barrier transistor in emerging electronic devices.

This paper explores how the Schottky barrier (SB) transistor is used in a variety of applications and material systems. A discussion of SB formation, current transport processes, and an overview of modeling are first considered. Three discussions follow, which detail the role of SB transistors in high performance, ubiquitous and cryogenic electronics. For high performance computing, the SB typically needs to be minimized to achieve optimal performance and we explore the methods adopted in carbon nanotube technology and two-dimensional electronics. On the contrary for ubiquitous electronics, the SB can be used advantageously in source-gated transistors and reconfigurable field-effect transistors (FETs) for sensors, neuromorphic hardware and security applications. Similarly, judicious use of an SB can be an asset for applications involving Josephson junction FETs.

Composition Dependent Electrical Transport in Si1-x Gex Nanosheets with Monolithic Single-Elementary Al Contacts.

Si1-x Gex is a key material in modern complementary metal-oxide-semiconductor and bipolar devices. However, despite considerable efforts in metal-silicide and -germanide compound material systems, reliability concerns have so far hindered the implementation of metal-Si1-x Gex junctions that are vital for diverse emerging "More than Moore" and quantum computing paradigms. In this respect, the systematic structural and electronic properties of Al-Si1-x Gex heterostructures, obtained from a thermally induced exchange between ultra-thin Si1-x Gex nanosheets and Al layers are reported. Remarkably, no intermetallic phases are found after the exchange process. Instead, abrupt, flat, and void-free junctions of high structural quality can be obtained. Interestingly, ultra-thin interfacial Si layers are formed between the metal and Si1-x Gex segments, explaining the morphologic stability. Integrated into omega-gated Schottky barrier transistors with the channel length being defined by the selective transformation of Si1-x Gex into single-elementary Al leads, a detailed analysis of the transport is conducted. In this respect, a report on a highly versatile platform with Si1-x Gex composition-dependent properties ranging from highly transparent contacts to distinct Schottky barriers is provided. Most notably, the presented abrupt, robust, and reliable metal-Si1-x Gex junctions can open up new device implementations for different types of emerging nanoelectronic, optoelectronic, and quantum devices.

Epitaxial Growth of Crystalline CaF2 on Silicene.

Silicene is one of the most promising two-dimensional (2D) materials for the realization of next-generation electronic devices, owing to its high carrier mobility and band gap tunability. To fully control its electronic properties, an external electric field needs to be applied perpendicularly to the 2D lattice, thus requiring the deposition of an insulating layer that directly interfaces silicene, without perturbing its bidimensional nature. A promising material candidate is CaF2, which is known to form a quasi van der Waals interface with 2D materials as well as to maintain its insulating properties even at ultrathin scales. Here we investigate the epitaxial growth of thin CaF2 layers on different silicene phases by means of molecular beam epitaxy. Through electron diffraction images, we clearly show that CaF2 can be grown epitaxially on silicene even at low temperatures, with its domains fully aligned to the lattice of the underlying 2D structure. Moreover, in situ X-ray photoelectron spectroscopy data evidence that, upon CaF2 deposition, no changes in the chemical state of the silicon atoms can be detected, proving that no Si-Ca or Si-F bonds are formed. This clearly shows that the 2D layer is pristinely preserved underneath the insulating layer. Polarized Raman experiments show that silicene undergoes a structural change upon interaction with CaF2; however, it retains its two-dimensional character without transitioning to a sp3-hybridized silicon. For the first time, we have shown that CaF2 and silicene can be successfully interfaced, paving the way for the integration of silicon-based 2D materials in functional devices.

Multisite Dopamine Sensing With Femtomolar Resolution Using a CMOS Enabled Aptasensor Chip.

Many biomarkers including neurotransmitters are found in external body fluids, such as sweat or saliva, but at lower titration levels than they are present in blood. Efficient detection of such biomarkers thus requires, on the one hand, to use techniques offering high sensitivity, and, on the other hand, to use a miniaturized format to carry out diagnostics in a minimally invasive way. Here, we present the hybrid integration of bottom-up silicon-nanowire Schottky-junction FETs (SiNW SJ-FETs) with complementary-metal-oxide-semiconductor (CMOS) readout and amplification electronics to establish a robust biosensing platform with 32 × 32 aptasensor measurement sites at a 100 µm pitch. The applied hetero-junctions yield a selective biomolecular detection down to femtomolar concentrations. Selective and multi-site detection of dopamine is demonstrated at an outstanding sensitivity of ∼1 V/fM. The integrated platform offers great potential for detecting biomarkers at high dilution levels and could be applied, for example, to diagnosing neurodegenerative diseases or monitoring therapy progress based on patient samples, such as tear liquid, saliva, or eccrine sweat.

Monolithic and Single-Crystalline Aluminum-Silicon Heterostructures.

Overcoming the difficulty in the precise definition of the metal phase of metal-Si heterostructures is among the key prerequisites to enable reproducible next-generation nanoelectronic, optoelectronic, and quantum devices. Here, we report on the formation of monolithic Al-Si heterostructures obtained from both bottom-up and top-down fabricated Si nanostructures and Al contacts. This is enabled by a thermally induced Al-Si exchange reaction, which forms abrupt and void-free metal-semiconductor interfaces in contrast to their bulk counterparts. The selective and controllable transformation of Si NWs into Al provides a nanodevice fabrication platform with high-quality monolithic and single-crystalline Al contacts, revealing resistivities as low as ρ = (6.31 ± 1.17) × 10-8 Ω m and breakdown current densities of Jmax = (1 ± 0.13) × 1012 Ω m-2. Combining transmission electron microscopy and energy-dispersive X-ray spectroscopy confirmed the composition as well as the crystalline nature of the presented Al-Si-Al heterostructures, with no intermetallic phases formed during the exchange process in contrast to state-of-the-art metal silicides. The thereof formed single-element Al contacts explain the robustness and reproducibility of the junctions. Detailed and systematic electrical characterizations carried out on back- and top-gated heterostructure devices revealed symmetric effective Schottky barriers for electrons and holes. Most importantly, fulfilling compatibility with modern complementary metal-oxide semiconductor fabrication, the proposed thermally induced Al-Si exchange reaction may give rise to the development of next-generation reconfigurable electronics relying on reproducible nanojunctions.

Nanometer-Scale Ge-Based Adaptable Transistors Providing Programmable Negative Differential Resistance Enabling Multivalued Logic.

The functional diversification and adaptability of the elementary switching units of computational circuits are disruptive approaches for advancing electronics beyond the static capabilities of conventional complementary metal-oxide-semiconductor-based architectures. Thereto, in this work the one-dimensional nature of monocrystalline and monolithic Al-Ge-based nanowire heterostructures is exploited to deliver charge carrier polarity control and furthermore to enable distinct programmable negative differential resistance at runtime. The fusion of electron and hole conduction together with negative differential resistance in a universal adaptive transistor may enable energy-efficient reconfigurable circuits with multivalued operability that are inherent components of emerging artificial intelligence electronics.

Plasmon-assisted polarization-sensitive photodetection with tunable polarity for integrated silicon photonic communication systems.

To establish high-bandwidth chip-to-chip interconnects in optoelectronic integrated circuits, requires high-performance photon emitters and signal receiving components. Regarding the photodetector, fast device concepts like Schottky junction devices, large carrier mobility materials and shrinking the channel length will enable higher operation speed. However, integrating photodetectors in highly scaled ICs technologies is challenging due to the efficiency-speed trade-off. Here, we report a scalable and CMOS-compatible approach for an ultra-scaled germanium (Ge) based photodetector with tunable polarity. The photodetector is composed of a Ge Schottky barrier field effect transistor with monolithic aluminum (Al) source/drain contacts, offering plasmon assisted and polarization-resolved photodetection. The ultra-scaled Ge photodetector with a channel length of only 200 nm shows high responsivity of aboutR = 424 A W-1and a maximum polarization sensitivity ratio of TM/TE = 11.

Al-Ge-Al Nanowire Heterostructure: From Single-Hole Quantum Dot to Josephson Effect.

Superconductor-semiconductor-superconductor heterostructures are attractive for both fundamental studies of quantum phenomena in low-dimensional hybrid systems as well as for future high-performance low power dissipating nanoelectronic and quantum devices. In this work, ultrascaled monolithic Al-Ge-Al nanowire heterostructures featuring monocrystalline Al leads and abrupt metal-semiconductor interfaces are used to probe the low-temperature transport in intrinsic Ge (i-Ge) quantum dots. In particular, demonstrating the ability to tune the Ge quantum dot device from completely insulating, through a single-hole-filling quantum dot regime, to a supercurrent regime, resembling a Josephson field effect transistor with a maximum critical current of 10 nA at a temperature of 390 mK. The realization of a Josephson field-effect transistor with high junction transparency provides a mechanism to study sub-gap transport mediated by Andreev states. The presented results reveal a promising intrinsic Ge-based architecture for hybrid superconductor-semiconductor devices for the study of Majorana zero modes and key components of quantum computing such as gatemons or gate tunable superconducting quantum interference devices.

Monolithic Metal-Semiconductor-Metal Heterostructures Enabling Next-Generation Germanium Nanodevices.

Low-dimensional Ge is perceived as a promising building block for emerging optoelectronic devices. Here, we present a wafer-scale platform technology enabling monolithic Al-Ge-Al nanostructures fabricated by a thermally induced Al-Ge exchange reaction. Transmission electron microscopy confirmed the purity and crystallinity of the formed Al segments with an abrupt interface to the remaining Ge segment. In good agreement with the theoretical value of bulk Al-Ge Schottky junctions, a barrier height of 200 ± 20 meV was determined. Photoluminescence and µ-Raman measurements proved the optical quality of the Ge channel embedded in the monolithic Al-Ge-Al heterostructure. Together with the wafer-scale accessibility, the proposed fabrication scheme may give rise to the development of key components of a broad spectrum of emerging Ge-based devices requiring monolithic metal-semiconductor-metal heterostructures with high-quality interfaces.

Channel Length-Dependent Operation of Ambipolar Schottky-Barrier Transistors on a Single Si Nanowire.

For use in flexible, printable, wearable electronics, Schottky-barrier field-effect transistors (SB-FETs) with various channel materials including low-dimensional nanomaterials have been considered so far due to their comparatively simple and cost-effective integration scheme free of junction and channel dopants. However, the electric conduction mechanism and the scaling properties underlying their performance differ significantly from those of conventional metal-oxide-semiconductor (MOS) field-effect transistors. Indeed, an understanding of channel length scaling and drain bias impact has not been elucidated sufficiently. Here, multiple ambipolar SB-FETs with different channel lengths have been fabricated on a single silicon nanowire ensuring a constant nanowire diameter. Their length scaling behavior is analyzed through drain current and transconductance contour maps, each depending on the drain and gate bias. The reduced gate control and extended drain field effect on Schottky junctions were observed in short channels. Activation energy measurements showed lower sensitive behavior of the Schottky barrier to gate bias in the short-channel device and confirmed the thinning of Schottky barrier width for electrons at the source interface with drain bias.

Enabling Energy Efficiency and Polarity Control in Germanium Nanowire Transistors by Individually Gated Nanojunctions.

Germanium is a promising material for future very large scale integration transistors, due to its superior hole mobility. However, germanium-based devices typically suffer from high reverse junction leakage due to the low band-gap energy of 0.66 eV and therefore are characterized by high static power dissipation. In this paper, we experimentally demonstrate a solution to suppress the off-state leakage in germanium nanowire Schottky barrier transistors. Thereto, a device layout with two independent gates is used to induce an additional energy barrier to the channel that blocks the undesired carrier type. In addition, the polarity of the same doping-free device can be dynamically switched between p- and n-type. The shown germanium nanowire approach is able to outperform previous polarity-controllable device concepts on other material systems in terms of threshold voltages and normalized on-currents. The dielectric and Schottky barrier interface properties of the device are analyzed in detail. Finite-element drift-diffusion simulations reveal that both leakage current suppression and polarity control can also be achieved at highly scaled geometries, providing solutions for future energy-efficient systems.

Silicon and germanium nanowire electronics: physics of conventional and unconventional transistors.

Research in the field of electronics of 1D group-IV semiconductor structures has attracted increasing attention over the past 15 years. The exceptional combination of the unique 1D electronic transport properties with the mature material know-how of highly integrated silicon and germanium technology holds the promise of enhancing state-of-the-art electronics. In addition of providing conduction channels that can bring conventional field effect transistors to the uttermost scaling limits, the physics of 1D group IV nanowires endows new device principles. Such unconventional silicon and germanium nanowire devices are contenders for beyond complementary metal oxide semiconductor (CMOS) computing by virtue of their distinct switching behavior and higher expressive value. This review conveys to the reader a systematic recapitulation and analysis of the physics of silicon and germanium nanowires and the most relevant CMOS and CMOS-like devices built from silicon and germanium nanowires, including inversion mode, junctionless, steep-slope, quantum well and reconfigurable transistors.

Compact Nanowire Sensors Probe Microdroplets.

The conjunction of miniature nanosensors and droplet-based microfluidic systems conceptually opens a new route toward sensitive, optics-less analysis of biochemical processes with high throughput, where a single device can be employed for probing of thousands of independent reactors. Here we combine droplet microfluidics with the compact silicon nanowire based field effect transistor (SiNW FET) for in-flow electrical detection of aqueous droplets one by one. We chemically probe the content of numerous (∼10(4)) droplets as independent events and resolve the pH values and ionic strengths of the encapsulated solution, resulting in a change of the source-drain current ISD through the nanowires. Further, we discuss the specificities of emulsion sensing using ion sensitive FETs and study the effect of droplet sizes with respect to the sensor area, as well as its role on the ability to sense the interior of the aqueous reservoir. Finally, we demonstrate the capability of the novel droplets based nanowire platform for bioassay applications and carry out a glucose oxidase (GOx) enzymatic test for glucose detection, providing also the reference readout with an integrated parallel optical detector.

Current Progress in the Chemical Vapor Deposition of Type-Selected Horizontally Aligned Single-Walled Carbon Nanotubes.

Exciting electrical properties of single-walled carbon nanotubes show promise as a future class of electronic materials, yet the manufacturing challenges remain significant. The key challenges are to determine fabrication approaches for complex and flexible arrangements of nanotube devices that are reliable, rapid, and reproducible. Realizing regular array structures is an important step toward this goal. Considerable efforts have and are being made in this vein, although the progress to date is somewhat modest. However, there are reasons to be optimistic. Positive steps of being able to control not only the spatial location and diameter of the tubes but also their electronic type (chiral control) are being made. Two primary approaches are being exploited to address the challenges. Tube deposition techniques, on the one hand, and direct growth of the desired tube at the target location are being explored. While this review covers both approaches, the emphasis is on recent developments in the direct fabrication of type-selected horizontally aligned single-walled carbon nanotubes by chemical vapor deposition.

High Area Capacity Lithium-Sulfur Full-cell Battery with Prelitiathed Silicon Nanowire-Carbon Anodes for Long Cycling Stability.

We show full Li/S cells with the use of balanced and high capacity electrodes to address high power electro-mobile applications. The anode is made of an assembly comprising of silicon nanowires as active material densely and conformally grown on a 3D carbon mesh as a light-weight current collector, offering extremely high areal capacity for reversible Li storage of up to 9 mAh/cm(2). The dense growth is guaranteed by a versatile Au precursor developed for homogenous Au layer deposition on 3D substrates. In contrast to metallic Li, the presented system exhibits superior characteristics as an anode in Li/S batteries such as safe operation, long cycle life and easy handling. These anodes are combined with high area density S/C composite cathodes into a Li/S full-cell with an ether- and lithium triflate-based electrolyte for high ionic conductivity. The result is a highly cyclable full-cell with an areal capacity of 2.3 mAh/cm(2), a cyclability surpassing 450 cycles and capacity retention of 80% after 150 cycles (capacity loss <0.4% per cycle). A detailed physical and electrochemical investigation of the SiNW Li/S full-cell including in-operando synchrotron X-ray diffraction measurements reveals that the lower degradation is due to a lower self-reduction of polysulfides after continuous charging/discharging.

Scaling and Graphical Transport-Map Analysis of Ambipolar Schottky-Barrier Thin-Film Transistors Based on a Parallel Array of Si Nanowires.

Si nanowire (Si-NW) based thin-film transistors (TFTs) have been considered as a promising candidate for next-generation flexible and wearable electronics as well as sensor applications with high performance. Here, we have fabricated ambipolar Schottky-barrier (SB) TFTs consisting of a parallel array of Si-NWs and performed an in-depth study related to their electrical performance and operation mechanism through several electrical parameters extracted from the channel length scaling based method. Especially, the newly suggested current-voltage (I-V) contour map clearly elucidates the unique operation mechanism of the ambipolar SB-TFTs, governed by Schottky-junction between NiSi2 and Si-NW. Further, it reveals for the first-time in SB based FETs the important internal electrostatic coupling between the channel and externally applied voltages. This work provides helpful information for the realization of practical circuits with ambipolar SB-TFTs that can be transferred to different substrate technologies and applications.

Light Weight and Flexible High-Performance Diagnostic Platform.

A flexible diagnostic platform is realized and its performance is demonstrated for early detection of avian influenza virus (AIV) subtype H1N1 DNA sequences. The key component of the platform is high-performance biosensors based on high output currents and low power dissipation Si nanowire field effect transistors (SiNW-FETs) fabricated on flexible 100 µm thick polyimide foils. The devices on a polymeric support are about ten times lighter compared to their rigid counterparts on Si wafers and can be prepared on large areas. While the latter potentially allows reducing the fabrication costs per device, the former makes them cost efficient for high-volume delivery to medical institutions in, e.g., developing countries. The flexible devices withstand bending down to a 7.5 mm radius and do not degrade in performance even after 1000 consecutive bending cycles. In addition to these remarkable mechanical properties, on the analytic side, the diagnostic platform allows fast detection of specific DNA sequences of AIV subtype H1N1 with a limit of detection of 40 × 10(-12) m within 30 min suggesting its suitability for early stage disease diagnosis.

Investigation of embedded perovskite nanoparticles for enhanced capacitor permittivities.

Growth experiments show significant differences in the crystallization of ultrathin CaTiO3 layers on polycrystalline Pt surfaces. While the deposition of ultrathin layers below crystallization temperature inhibits the full layer crystallization, local epitaxial growth of CaTiO3 crystals on top of specific oriented Pt crystals occurs. The result is a formation of crystals embedded in an amorphous matrix. An epitaxial alignment of the cubic CaTiO3 ⟨111⟩ direction on top of the underlying Pt {111} surface has been observed. A reduced forming energy is attributed to an interplay of surface energies at the {111} interface of both materials and CaTiO3 nanocrystallites facets. The preferential texturing of CaTiO3 layers on top of Pt has been used in the preparation of ultrathin metal-insulator-metal capacitors with 5-30 nm oxide thickness. The effective CaTiO3 permittivity in the capacitor stack increases to 55 compared to capacitors with amorphous layers and a permittivity of 28. The isolated CaTiO3 crystals exhibit a passivation of the CaTiO3 grain surfaces by the surrounding amorphous matrix, which keeps the capacitor leakage current at ideally low values comparable for those of amorphous thin film capacitors.

Dually active silicon nanowire transistors and circuits with equal electron and hole transport.

We present novel multifunctional nanocircuits built from nanowire transistors that uniquely feature equal electron and hole conduction. Thereby, the mandatory requirement to yield energy efficient circuits with a single type of transistor is shown for the first time. Contrary to any transistor reported up to date, regardless of the technology and semiconductor materials employed, the dually active silicon nanowire channels shown here exhibit an ideal symmetry of current-voltage device characteristics for electron (n-type) and hole (p-type) conduction as evaluated in terms of comparable currents, turn-on threshold voltages, and switching slopes. The key enabler to symmetry is the selective tunability of the tunneling transmission of charge carriers as rendered by the combination of the nanometer-scale dimensions of the junctions and the application of radially compressive strain. To prove the advantage of this concept we integrated dually active transistors into cascadable and multifunctional one-dimensional circuit strings. The nanocircuits confirm energy efficient switching and can further be electrically configured to provide four different types of operation modes compared to a single one when employing conventional electronics with the same amount of transistors.