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High-entropy alloys (HEAs) provide new research avenues for alloy combinations in the periodic table, opening numerous possibilities in novel-alloy applications. However, their electrical characteristics have been relatively underexplored. The challenge in establishing an HEA electrical conductivity model lies in the changes in electronic characteristics caused by lattice distortion and complexity of nanostructures. Here we show a low-frequency electrical conductivity model for the Nb-Mo-Ta-W HEA system. The cocktail effect is found to explain trends in electrical-conductivity changes in HEAs, while the magnitude of the reduction is understood by the calculated plasma frequency, free electron density, and measured relaxation time by terahertz spectroscopy. As a result, the refractory HEA Nb15Mo35Ta15W35 thin film exhibits both high hardness and excellent conductivity. This combination of Nb15Mo35Ta15W35 makes it suitable for applications in atomic force microscopy probe coating, significantly improving their wear resistance and atomic-scale image resolution.
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Due to extraordinary electronic and optoelectronic properties, large-scale single-crystal two-dimensional (2D) semiconducting transition metal dichalcogenide (TMD) monolayers have gained significant interest in the development of profit-making cutting-edge nano and atomic-scale devices. To explore the remarkable properties of single-crystal 2D monolayers, many strategies are proposed to achieve ultra-thin functional devices. Despite substantial attempts, the controllable growth of high-quality single-crystal 2D monolayer still needs to be improved. The quality of the 2D monolayer strongly depends on the underlying substrates primarily responsible for the formation of grain boundaries during the growth process. To restrain the grain boundaries, the epitaxial growth process plays a crucial role and becomes ideal if an appropriate single crystal substrate is selected. Therefore, this perspective focuses on the latest advances in the growth of large-scale single-crystal 2D TMD monolayers in the light of enhancing their industrial applicability. In the end, recent progress and challenges of 2D TMD materials for various potential applications are highlighted.
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In this study, we have designed an electrically tunable multi-band terahertz (THz) metamaterial filter based on graphene and multiple-square-loop structures. The structure contains multiple metal square loops, and these loops with different sizes correspond to different THz frequencies, achieving our expected efficacy of a multiband wave filter. Furthermore, by sweeping external voltages, we could change graphene's Fermi levels, and thus the high-sensitivity THz filter's capability from single-band to multi-band filtering can be modulated. We expect that this study of a hybrid THz wave filter would be promising for the development of selecting channels in THz and 6â G communications.
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The development of optical organic nanoparticles (NPs) is desirable and widely studied. However, most organic dyes are water-insoluble such that the derivatization and modification of these dyes are difficult. Herein, we demonstrated a simple platform for the fabrication of organic NPs designed with emissive properties by loading ten different organic dyes (molar masses of 479.1-1081.7 g/mol) into water-soluble polymer nanosponges composed of poly(styrene-alt-maleic acid) (PSMA). The result showed a substantial improvement over the loading of commercial dyes (3.7-50% loading) while preventing their spontaneous aggregation in aqueous solutions. This packaging strategy includes our newly synthesized organic dyes (> 85% loading) designed for OPVs (242), DSSCs (YI-1, YI-3, YI-8), and OLEDs (ADF-1-3, and DTDPTID) applications. These low-cytotoxicity organic NPs exhibited tunable fluorescence from visible to near-infrared (NIR) emission for cellular imaging and biological tracking in vivo. Moreover, PSMA NPs loaded with designed NIR-dyes were fabricated, and photodynamic therapy with these dye-loaded PSMA NPs for the photolysis of cancer cells was achieved when coupled with 808 nm laser excitation. Indeed, our work demonstrates a facile approach for increasing the biocompatibility and stability of organic dyes by loading them into water-soluble polymer-based carriers, providing a new perspective of organic optoelectronic materials in biomedical theranostic applications.
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Nanopartículas , Fotoquimioterapia , Colorantes , Polímeros , AguaRESUMEN
Recently, nanoscale light manipulation using surface plasmon polaritons (SPPs) has received considerable research attention. The conventional method of detecting SPPs is through light scattering or using bulky Si or Ge photodetectors. However, these bulky systems limit the application of nanophotonic circuits. In this study, the light-matter interaction between graphene and SPP was investigated. For realizing an improved integration in nanocircuits, single-layer graphene was added to asymmetric SPP nanoantenna arrays for nonscattering detection in the near field. The developed device is capable of detecting the controlled propagation of SPPs with a photoresponsivity of 15 mA/W, which paves the way for the new-generation on-chip optical communication.
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Borophene (B), with remarkably unique chemical binding in its crystallographic structural phases including anisotropic structures, theoretically has high Young's modulus and thermal conductivity. Moreover, it is metallic in nature, and has recently joined the family of two-dimensional (2D) materials and is poised to be employed in flexible hetero-layered devices and sensors in fast electronic gadgets and excitonic devices. Interfacial coupling helps individual atomic sheets synergistically work in tandem, and is very crucial in controllable functionality. Most of the microscopic and spectroscopic scans reveal surface information; however, information regarding interfacial coupling is difficult to obtain. Electronic signatures of dynamic inter-layer coupling in B/boron nitride (BN) and B/molybdenum disulfide (MoS2) have been detected in the form of distinct peaks in differential current signals obtained from scanning tunneling spectroscopy (STS) and conducting atomic force microscopy (CAFM). These unique sets of observed peaks represent interfacial coupling quantum states. The peaks in the electronic density of states (DOS) obtained via density functional theory (DFT) band structure calculations matched well with the electronic signatures of coupling quantum states. In our calculations, we found that the DOS peak evolves when the component layers are brought to compromised distances. While B/BN exhibits green sensitivity indicating mid-gap formation, B/MoS2 bestows red sensitivity indicating band-gap excitation of MoS2. Molecular detection of methylene blue (MB) based on surface-enhanced Raman spectroscopy (SERS) was carried out with borophene-based hetero-layered stacks as molecular anchoring platforms.
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Twisted light carries a well-defined orbital angular momentum (OAM) of lâ per photon. The quantum number l of its OAM can be arbitrarily set, making it an excellent light source to realize high-dimensional quantum entanglement and ultrawide bandwidth optical communication structures. In spite of its interesting properties, twisted light interaction with solid state materials, particularly two-dimensional materials, is yet to be extensively studied via experiments. In this work, photoluminescence (PL) spectroscopy studies of monolayer molybdenum disulfide (MoS2), a material with ultrastrong light-matter interaction due to reduced dimensionality, are carried out under photoexcitation of twisted light. It is observed that the measured spectral peak energy increases for every increment of l of the incident light. The nonlinear l-dependence of the spectral blue shifts is well accounted for by the analysis and computational simulation of this work. More excitingly, the twisted light excitation revealed the unusual lightlike exciton band dispersion of valley excitons in monolayer transition metal dichalcogenides. This linear exciton band dispersion is predicted by previous theoretical studies and evidenced via this work's experimental setup.
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Development of the wideband and tunable quasi-optic terahertz (THz) components is in high demand. In this work, we demonstrate a tunable achromatic quarter-wave plate (AQWP) for the THz frequency range. The phase retardation of this device can be set at 90° ± 9° from 0.20 to 0.50 THz. The operation range from 0.20 to 0.50 THz can be tuned to from 0.30 to 0.70 THz by introducing three nematic liquid crystals phase retarders, of which the birefringence can be magnetically tuned. The frequency-dependent phase retardation is in good agreement with theoretical predictions.
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Graphene near charge neutrality is expected to behave like a quantum-critical, relativistic plasma-the "Dirac fluid"-in which massless electrons and holes collide at a rapid rate. We used on-chip terahertz spectroscopy to measure the frequency-dependent optical conductivity of clean, micrometer-scale graphene at electron temperatures between 77 and 300 kelvin. At charge neutrality, we observed the quantum-critical scattering rate characteristic of the Dirac fluid. At higher doping, we detected two distinct current-carrying modes with zero and nonzero total momenta, a manifestation of relativistic hydrodynamics. Our work reveals the quantum criticality and unusual dynamic excitations near charge neutrality in graphene.
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We present a measurement of the time-resolved photoelectron kinetic energy spectrum of ethylene using 156 nm and 260 nm laser pulses. The 156 nm pulse first excites ethylene to the (1)B1u (ππ(∗)) electronic state where 260 nm light photoionizes the system to probe the relaxation dynamics with sub-30 fs resolution. Recent ab initio calculations by Mori et al. [J. Phys. Chem. A 116, 2808-2818 (2012)] have predicted an ultrafast population transfer from the initially excited state to a low-lying Rydberg state during the relaxation of photoexcited ethylene. The measured photoelectron kinetic energy spectrum reveals wave packet motion on the valence state and shows indications that the low-lying π3s Rydberg state is indeed transiently populated via internal conversion following excitation to the ππ(∗) state, supporting the theoretical predictions.
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Indium-tin-oxide nanowhiskers were employed as transparent electrodes in a liquid-crystal terahertz phase shifter. Transmittance of the device was as high as â¼75%. Phase shift exceeding π/2 at 1.0 THz is achieved in a â¼500 µm-thick cell. The driving voltage required for the device operating as a quarter-wave plate was as low as 17.68 V (rms), an improvement of nearly an order of magnitude over previous work.
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Nanopartículas del Metal/química , Compuestos de Estaño/química , Electricidad , Electrodos , Cristales Líquidos , Dispositivos Ópticos , Fenómenos ÓpticosRESUMEN
Indium-tin-oxide (ITO) nanorods (NRs) and nanowhiskers (NWhs) were fabricated by an electron-beam glancing-angle deposition (GLAD) system. These nanomaterials are of interests as transparent conducting electrodes in various devices. Two terahertz (THz) time-domain spectrometers (TDS) with combined spectral coverage from 0.15 to 9.00 THz were used. These allow accurate determination of the optical and electrical properties of such ITO nanomaterials in the frequency range from 0.20 to 4.00 THz. Together with Fourier transform infrared spectroscopic (FTIR) measurements, we found that the THz and far-infrared transmittance of these nanomaterials can be as high as 70% up to 15 THz, as opposed to about 9% for sputtered ITO thin films. The complex conductivities of ITO NRs, NWhs as well films are well fitted by the Drude-Smith model. Taking into account that the volume filling factors of both type of nanomaterials are nearly same, mobilities, and DC conductivities of ITO NWhs are higher than those of NRs due to less severe carrier localization effects in the former. On the other hand, mobilities of sputtered ITO thin films are poorer than ITO nanomaterials because of larger concentration of dopant ions in films, which causes stronger carrier scattering. We note further that consideration of the extreme values of Re{σ} and Im{σ} as well the inflection points, which are functions of the carrier scattering time (τ) and the expectation value of cosine of the scattering angle (γ), provide additional criteria for accessing the accuracy of the extraction of electrical parameters of non-Drude-like materials using THz-TDS. Our studies so far indicate ITO NWhs with heights of ~1000 nm show outstanding transmittance and good electrical characteristics for applications such as transparent conducting electrodes of THz Devices.
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Nanopartículas/química , Resonancia por Plasmón de Superficie/métodos , Compuestos de Estaño/química , Conductividad Eléctrica , Luz , Ensayo de Materiales , Nanopartículas/efectos de la radiación , Radiación Terahertz , Compuestos de Estaño/efectos de la radiaciónRESUMEN
Indium-tin-oxide (ITO) nanowhiskers with attractive electrical and anti-reflection properties were prepared by the glancing-angle electron-beam evaporation technique. Structural and crystalline properties of such nanostructures were examined by scanning transmission electron microscopy and X-ray diffraction. Their frequency-dependent complex conductivities, refractive indices and absorption coefficients have been characterized with terahertz time-domain spectroscopy (THz-TDS), in which the nanowhiskers were considered as a graded-refractive-index (GRIN) structure instead of the usual thin film model. The electrical properties of ITO GRIN structures are analyzed and fitted well with Drude-Smith model in the 0.2~2.0 THz band. Our results indicate that the ITO nanowhiskers and its bottom layer atop the substrate exhibit longer carrier scattering times than ITO thin films. This signifies that ITO nanowhiskers have an excellent crystallinity with large grain size, consistent with X-ray data. Besides, we show a strong backscattering effect and fully carrier localization in the ITO nanowhiskers.
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Terahertz (THz) radiation can be generated more efficiently from a low-temperature-grown GaAs (LT-GaAs) photoconductive (PC) antenna by considering the two-photon absorption (TPA) induced photo-carrier in the photoconductor. A rate-equation-based approach using the Drude-Lorentz model taking into account the band-diagram of LT-GaAs is used for the theoretical analysis. The use of transform-limited pulses at the PC antenna is critical experimentally. Previously unnoticed THz pulse features and anomalously increasing THz radiation power rather than saturation were observed. These are in good agreement with the theoretical predictions. The interplay of intensity dependence and dynamics of generation of photoexcited carriers by single-photon absorption and TPA for THz emission is discussed.