Growth of Single Crystalline 2D Materials beyond Graphene on Non-metallic Substrates.

The advent of 2D materials has ushered in the exploration of their synthesis, characterization and application. While plenty of 2D materials have been synthesized on various metallic substrates, interfacial interaction significantly affects their intrinsic electronic properties. Additionally, the complex transfer process presents further challenges. In this context, experimental efforts are devoted to the direct growth on technologically important semiconductor/insulator substrates. This review aims to uncover the effects of substrate on the growth of 2D materials. The focus is on non-metallic substrate used for epitaxial growth and how this highlights the necessity for phase engineering and advanced characterization at atomic scale. Special attention is paid to monoelemental 2D structures with topological properties. The conclusion is drawn through a discussion of the requirements for integrating 2D materials with current semiconductor-based technology and the unique properties of heterostructures based on 2D materials. Overall, this review describes how 2D materials can be fabricated directly on non-metallic substrates and the exploration of growth mechanism at atomic scale.

A bulk form Cu-based ferromagnetic semiconductor (La,Ba)(Cu,Mn)SO with the Curie temperature up to 170 K.

We report the ferromagnetism in a new bulk form Cu-based magnetic semiconductor (La,Ba)(Cu,Mn)SO, which is iso-structural to the prototypical iron-based 1111-type superconductor LaFeAsO. Starting from the parent compound LaCuSO, carriers are introduced via the substitutions of La for Ba while spins are introduced via the substitutions of Cu for Mn. Spins are mediated by carriers, which develops into the long range ferromagnetic ordering. The maximum Curie temperature [Formula: see text] reaches up to [Formula: see text] 170 K with the doping levels of 10% Ba and 5% Mn. By comparing to the (La,Sr)(Cu,Mn)SO where Sr and Mn are co-doped into LaCuSO, we demonstrate that negative chemical pressure would suppress the ferromagnetic ordering.

High-Yield Production of Quantum Corrals in a Surface Reconstruction Pattern.

The power of surface chemistry to create atomically precise nanoarchitectures offers intriguing opportunities to advance the field of quantum technology. Strategies for building artificial electronic lattices by individually positioning atoms or molecules result in precisely tailored structures but lack structural robustness. Here, taking the advantage of strong bonding of Br atoms on noble metal surfaces, we report the production of stable quantum corrals by dehalogenation of hexabromobenzene molecules on a preheated Au(111) surface. The byproducts, Br adatoms, are confined within a new surface reconstruction pattern and aggregate into nanopores with an average size of 3.7 ± 0.1 nm, which create atomic orbital-like quantum resonance states inside each corral due to the interference of scattered electron waves. Remarkably, the atomic orbitals can be hybridized into molecular-like orbitals with distinct bonding and antibonding states. Our study opens up an avenue to fabricate quantum structures with high yield and superior robustness.

Polaronic defects in monolayer CeO2: Quantum confinement effect and strain engineering.

We uncover the structure, stability, and electronic properties of polaronic defects in monolayer (ML) CeO2 by means of first-principles calculations, with special attention paid to the quantum confinement effect induced by dimensionality reduction. Results show that the polaron can be more stabilized in ML CeO2 than in the bulk, while formation of oxygen vacancy (Vo2+) and polaron-vacancy complexes [(Vo2+-1polaron)1+, (Vo2+-2polaron)0] tends to be more difficult. The polaronic defect states sit deeper in energy within the bandgap of ML CeO2 compared to the bulk case. We further demonstrate that the epitaxial strain in ceria film, as normally exists when grown on metal substrate, plays a crucial role in regulating the defect energetics and electronic structures. In particular, the formation energies of polarons, Vo2+, (Vo2+-1polaron)1+, and (Vo2+-2polaron)0, generally decrease with tensile strain, leading to controllable defect concentration with strain and temperature. This study not only provides physical insights into the polaronic defects in ultrathin oxide films, but also sheds light on their potential technological applications in nanoelectronics, fuel cells, and catalysts.

Drastic improvement of Curie temperature by chemical pressure in N-type diluted magnetic semiconductor Ba(Zn,Co)[Formula: see text]As[Formula: see text].

We report the effect of chemical pressure on the ferromagnetic ordering of the recently reported n-type diluted magnetic semiconductor Ba(Zn[Formula: see text]Co[Formula: see text])[Formula: see text]As[Formula: see text] which has a maximum [Formula: see text] [Formula: see text] 45 K. Doping Sb into As-site and Sr into Ba-site induces negative and positive chemical pressure, respectively. While conserving the tetragonal crystal structure and n-type carriers, the unit cell volume shrink by [Formula: see text] 0.3[Formula: see text] with 15[Formula: see text] Sr doping, but drastically increase the ferromagnetic transition temperature by 18[Formula: see text] to 53 K. Our experiment unequivocally demonstrate that the parameters of Zn(Co)As[Formula: see text] tetrahedra play a vital role in the formation of ferromagnetic ordering in the Ba(Zn,Co)[Formula: see text]As[Formula: see text] DMS.

From Trivial Kondo Insulator Ce_{3}Pt_{3}Bi_{4} to Topological Nodal-Line Semimetal Ce_{3}Pd_{3}Bi_{4}.

Using the density functional theory combined with dynamical mean-field theory, we have performed systematic study of the electronic structure and its band topology properties of Ce_{3}Pt_{3}Bi_{4} and Ce_{3}Pd_{3}Bi_{4}. At high temperatures (∼290 K), the electronic structures of both compounds resemble the open-core 4f density functional calculation results. For Ce_{3}Pt_{3}Bi_{4}, clear hybridization gap can be observed below 72 K, and its coherent momentum-resolved spectral function below 18 K exhibits an topologically trivial indirect gap of ∼6 meV and resembles density functional band structure with itinerant 4f state. For Ce_{3}Pd_{3}Bi_{4}, no clear hybridization gap can be observed down to 4 K, and its momentum-resolved spectral function resembles electron-doped open-core 4f density functional calculations. The band nodal points of Ce_{3}Pd_{3}Bi_{4} at 4 K are protected by the gliding-mirror symmetry and form ringlike structure. Therefore, the Ce_{3}Pt_{3}Bi_{4} compound is topologically trivial Kondo insulator while the Ce_{3}Pd_{3}Bi_{4} compound is topological nodal-line semimetal.