A synergetic cocatalyst for conversion of carbon dioxide, sunlight, and water into methanol.

The conversion of CO2 into liquid fuels, using only sunlight and water, offers a promising path to carbon neutrality. An outstanding challenge is to achieve high efficiency and product selectivity. Here, we introduce a wireless photocatalytic architecture for conversion of CO2 and water into methanol and oxygen. The catalytic material consists of semiconducting nanowires decorated with core-shell nanoparticles, with a copper-rhodium core and a chromium oxide shell. The Rh/CrOOH interface provides a unidirectional channel for proton reduction, enabling hydrogen spillover at the core-shell interface. The vectorial transfer of protons, electrons, and hydrogen atoms allows for switching the mechanism of CO2 reduction from a proton-coupled electron transfer pathway in aqueous solution to hydrogenation of CO2 with a solar-to-methanol efficiency of 0.22%. The reported findings demonstrate a highly efficient, stable, and scalable wireless system for synthesis of methanol from CO2 that could provide a viable path toward carbon neutrality and environmental sustainability.

Enhanced Photoemission Performance of InGaN Inclined Nanowire Array.

We propose to improve the solar energy utilization by using InGaN inclined nanowire array photocathodes. We first study vertical nanowire array. On the basis of vertical nanowire array, we study inclined nanowires by changing the inclination angle of nanowires. The inclined nanowires exhibit higher quantum efficiency at larger period and larger inclination angle. However, the infinite expansion of period will cause its performance to degrade. The quantum efficiency of inclined nanowires with a period of 175 nm and an inclination angle of 5.35° is as high as 80.2% when the incident light angle is irradiated at 5°. In addition, applying an electric field can improve the collection efficiency of inclined nanowires and help them maintain a high collection efficiency over a longer wavelength range. The design principles proposed in this work will provide a theoretical reference for the performance improvement of InGaN photocathodes.

Innovative Stacked Yellow and Blue Mini-LED Chip for White Lamp Applications.

This study introduces a novel approach for fabricating vertically stacked mini-LED arrays, integrating InGaN yellow and blue epitaxial layers with a stress buffer layer to enhance optoelectronic characteristics and structural stability. This method significantly simplifies the LED design by reducing the need for RGB configurations, thus lowering costs and system complexity. Employing vertical stacking integration technology, the design achieves high-density, efficient white light production suitable for multifunctional applications, including automotive lighting and outdoor signage. Experimental results demonstrate the exceptional performance of the stacked yellow and blue mini-LEDs in terms of luminous efficiency, wavelength precision, and thermal stability. The study also explores the performance of these LEDs under varying temperature conditions and their long-term reliability, indicating that InGaN-based yellow LEDs offer superior performance over traditional AlGaInP yellow LEDs, particularly in high-temperature environments. This technology promises significant advancements in the design and application of lighting systems, with potential implications for both automotive and general illumination markets.

Application of C-InGAN Model in Interpretable Feature of Bearing Fault Diagnosis.

Although traditional fault diagnosis methods are proficient in extracting signal features, their diagnostic interpretability remains challenging. Consequently, this article proposes a conditionally interpretable generative adversarial network (C-InGAN) model for the interpretable feature fault diagnosis of bearings. Initially, the vibration signal is denoised and transformed into a frequency domain signal. The model consists of the two primary networks, each employing a convolutional layer and an attention module, generator (G) and discriminator (D), respectively. Latent code was incorporated into G to constrain the generated samples, and a discriminant layer was added to D to identify the interpretable features. During training, the two networks were alternately trained, and the feature mapping relationship of the pre-normalized encoder was learned by maximizing the information from the latent code and the discriminative result. The encoding that represents specific features in the vibration signal was extracted from the random noise. Ultimately, after completing adversarial learning, G is capable of generating a simulated signal of the specified feature, and D can assess the interpretable features in the vibration signal. The effectiveness of the model is validated through three typical experimental cases. This method effectively separates the discrete and continuous feature coding in the signal.

High-Speed and High-Responsivity Blue Light Photodetector with an InGaN NR/PEDOT:PSS Heterojunction Decorated with Ag NWs.

InGaN nanorods possessing larger and wavelength selective absorption by regulating In component based visible light photodetectors (PDs) as one of the key components in the field of visible light communication have received widespread attention. Currently, the weak photoelectric conversion efficiency and slow photoresponse speed of InGaN nanorod (NR) based PDs due to high surface states of InGaN NRs impede the actualization of high-responsivity and high-speed blue light PDs. Here, we have demonstrated high-performance InGaN NR/PEDOT:PSS@Ag nanowire (NW) heterojunction blue light photodetectors utilizing surface passivation and a localized surface plasmon resonance effect. The dark current is significantly reduced by passivating the InGaN NR surface states using PEDOT:PSS. The photoelectric conversion efficiency is significantly increased by increasing light absorption due to the electromagnetic field oscillation of Ag NWs. The responsivity, external quantum efficiency, detectivity, and fall/off time of the InGaN NR/PEDOT:PSS@Ag NW PDs are up to 2.9 A/W, 856%, 6.64 × 1010 Jones, and 439/725 µs, respectively, under 1 V bias and 420 nm illumination. The proposed device design presents a novel approach toward the development of low-cost, high-responsivity, high-speed blue light photodetectors for applications involving visible light communication.

Harnessing III-Nitride Built-In Field in Multi-Quantum Well LEDs.

III-nitrides possess several unique qualities, which allow them to make the world brighter, but their uniqueness is not always beneficial. The uniaxial nature of the wurtzite crystal leads to strikingly large electric polarization fields, which along with the high acceptor ionization energy cause low injection efficiency and uneven carrier distribution for multiple quantum well (QW) light emitting devices. In this work, we explore the carrier distribution in Ga-polar LED in two configurations: standard "p-up" and "p-down", which is accomplished by utilizing a bottom-tunnel junction. This enables the inversion of the sequence of the p and n layers while altering the direction of the current flow with respect to the inherent polarization. To probe the carrier distribution two, color-coded QWs are used in alternating sequences. Our study reveals that for "p-down" devices carrier transport through multiple QWs is limited by the potential barrier at the QW interface, which is in contrast to results for "p-up" structures, where hole mobility is the bottleneck. Moreover, investigated "p-down" LEDs exhibit an extremely low turn-on voltage.

The Influence Mechanism of Quantum Well Growth and Annealing Temperature on In Migration and Stress Modulation Behavior.

This study explores the effects of growth temperature of InGaN/GaN quantum well (QW) layers on indium migration, structural quality, and luminescence properties. It is found that within a specific range, the growth temperature can control the efficiency of In incorporation into QWs and strain energy accumulated in the QW structure, modulating the luminescence efficiency. Temperature-dependent photoluminescence (TDPL) measurements revealed a more pronounced localized state effect in QW samples grown at higher temperatures. Moreover, a too high annealing temperature will enhance indium migration, leading to an increased density of non-radiative recombination centers and a more pronounced quantum-confined Stark effect (QCSE), thereby reducing luminescence intensity. These findings highlight the critical role of thermal management in optimizing the performance of InGaN/GaN MQWs in LEDs and other photoelectronic devices.

Flexible light-stimulated artificial synapse based on detached (In,Ga)N thin film for neuromorphic computing.

Because of wide range of applications, the flexible artificial synapse is an indispensable part for next-generation neural morphology computing. In this work, we demonstrate a flexible synaptic device based on a lift-off (In,Ga)N thin film successfully. The synaptic device can mimic the learning, forgetting, and relearning functions of biological synapses at both flat and bent states. Furthermore, the synaptic device can simulate the transition from short-term memory to long-term memory successfully under different bending conditions. With the high flexibility, the excitatory post-synaptic current of the bent device only shows a slight decrease, leading to the high stability. Based on the experimental conductance for long-term potentiation and depression, the simulated three-layer neural network can achieve a high recognition rate up to 90.2%, indicating that the system comprising of flexible synaptic devices could have a strong learning-memory capability. Therefore, this work has a great potential for the development of wearable intelligence devices and flexible neuromorphic systems.

Nano-indentation study of dislocation evolution in GaN-based laser diodes.

The slip systems and motion behavior of dislocations induced by nano-indentation technique in GaN-based LDs were investigated. Dislocations with burgers vector of b = 1/3 <11 2 ¯ 3> were introduced on either {11 2 ¯ 2} <11 2 ¯ 3>, or {1 1 ¯ 01} <11 2 ¯ 3> pyramidal slip systems in the upper p-GaN layer. Besides, {0001} <11 2 ¯ 0> basal slip system was also activated. The AlGaN/InGaN multi-layers in device can provide mismatch stresses to prevent dislocations from slipping through. It was observed that the density of dislocations induced by the indenter significantly decreased from the upper to the lower regions of the multi-layers. The a + c dislocations on pyramidal slip planes were mostly blocked by the strained layers.

Rh/InGaN1-xOx nanoarchitecture for light-driven methane reforming with carbon dioxide toward syngas.

Light-driven dry reforming of methane toward syngas presents a proper solution for alleviating climate change and for the sustainable supply of transportation fuels and chemicals. Herein, Rh/InGaN1-xOx nanowires supported by silicon wafer are explored as an ideal platform for loading Rh nanoparticles, thus assembling a new nanoarchitecture for this grand topic. In combination with the remarkable photo-thermal synergy, the O atoms in Rh/InGaN1-xOx can significantly lower the apparent activation energy of dry reforming of methane from 2.96 eV downward to 1.70 eV. The as-designed Rh/InGaN1-xOx NWs nanoarchitecture thus demonstrates a measurable syngas evolution rate of 180.9 mmol gcat-1 h-1 with a marked selectivity of 96.3% under concentrated light illumination of 6 W cm-2. What is more, a high turnover number (TON) of 4182 mol syngas per mole Rh has been realized after six reuse cycles without obvious activity degradation. The correlative 18O isotope labeling experiments, in-situ irradiated X-ray photoelectron spectroscopy (ISI-XPS) and in-situ diffuse reflectance Fourier transform infrared spectroscopy characterizations, as well as density functional theory calculations reveal that under light illumination, Rh/InGaN1-xOx NWs facilitate releasing *CH3 and H+ from CH4 by holes, followed by H2 evolution from H+ reduction with electrons. Subsequently, the O atoms in Rh/InGaN1-xOx can directly participate in CO generation by reacting with the *C species from CH4 dehydrogenation and contributes to the coke elimination, in concurrent formation of O vacancies. The resultant O vacancies are then replenished by CO2, showing an ideal chemical loop. This work presents a green strategy for syngas production via light-driven dry reforming of methane.

The dissociation of (a+c) misfit dislocations at the InGaN/GaN interface.

In hexagonal materials, (a+c) dislocations are typically observed to dissociate into partial dislocations. Edge (a+c) dislocations are introduced into (0001) nitride semiconductor layers by the process of plastic relaxation. As there is an increasing interest in obtaining relaxed InGaN buffer layers for the deposition of high In content structures, the study of the dissociation mechanism of misfit (a+c) dislocations laying at the InGaN/GaN interface is then crucial for understanding their nucleation and glide mechanisms. In the case of the presented plastically relaxed InGaN layers deposited on GaN substrates, we observe a trigonal network of (a+c) dislocations extending at the interface with a rotation of 3° from <1 1 ¯ $\bar 1$ 00> directions. High-resolution microscopy studies show that these dislocations are dissociated into two Frank-Shockley 1/6<2 2 ¯ $\bar 2$ 03> partial dislocations with the I1 BSF spreading between them. Atomistic simulations of a dissociated edge (a+c) dislocation revealed a 3/5-atom ring structure for the cores of both partial dislocations. The observed separation between two partial dislocations must result from the climb of at least one of the dislocations during the dissociation process, possibly induced by the mismatch stress in the InGaN layer.

Green Vertical-Cavity Surface-Emitting Lasers Based on InGaN Quantum Dots and Short Cavity.

Room temperature low threshold lasing of green GaN-based vertical cavity surface emitting laser (VCSEL) was demonstrated under continuous wave (CW) operation. By using self-formed InGaN quantum dots (QDs) as the active region, the VCSEL emitting at 524.0 nm has a threshold current density of 51.97 A cm-2, the lowest ever reported. The QD epitaxial wafer featured with a high IQE of 69.94% and the δ-function-like density of states plays an important role in achieving low threshold current. Besides, a short cavity of the device (~ 4.0 λ) is vital to enhance the spontaneous emission coupling factor to 0.094, increase the gain coefficient factor, and decrease the optical loss. To improve heat dissipation, AlN layer was used as the current confinement layer and electroplated copper plate was used to replace metal bonding. The results provide important guidance to achieving high performance GaN-based VCSELs.

A Simulation Study of Carrier Capture Ability of the Last InGaN Quantum Well with Different Indium Content for Yellow-Light-Emitting InGaN/GaN Multiple Quantum Wells.

Currently, GaN-based blue- and green-light-emitting devices have achieved successful applications in practice, while the luminescence efficiency of devices with longer wavelengths (such as yellow light) is still very low. Therefore, in this paper, the electroluminescence characterization of yellow-light-emitting InGaN/GaN multiple quantum wells (MQWs) with different In content in the last InGaN quantum well, which is next to the p-type GaN electrode layer, are investigated numerically to reveal a possible physical mechanism by which the different distribution of In content in the active region impacts the carrier capture and the light emission process in yellow InGaN/GaN MQWs. The simulation results show that at low injection currents, the luminescence efficiency of high-In-content yellow MQWs is enhanced, which can be ascribed to the enhanced radiative recombination process induced by the increased carrier concentration in the last InGaN quantum wells with promoted carrier capture ability. However, in the case of high injection condition, the luminescence efficiency of yellow MQWs deteriorates with increasing In content, i.e., the droop effect becomes remarkable. This can be ascribed to both significantly enhanced Auger recombination and electron leakage in the last InGaN quantum well, induced also by the promoted capture ability of charge carriers.

The Photonic Atom Probe as a Tool for the Analysis of the Effect of Defects on the Luminescence of Nitride Quantum Structures.

By collecting simultaneously optical and chemical/morphological data from nanoscale volumes, the Photonic Atom Probe (PAP) can be applied not only to the study of the relationship between optical and structural properties of quantum emitter but also to evaluate the influence of other factors, such as the presence of point defects, on the photoluminescence. Through the analysis of multiple layers of InGaN/GaN quantum dots (QDs), grown so that the density of structural defects is higher with increasing distance from the substrate, we establish that the light emission is higher in the regions exhibiting a higher presence of structural defects. While the presence of intrinsic point defects with non-radiative recombination properties remains elusive, our result is consistent with the fact that QD layers closer to the substrate behave as traps for non-radiative point defects. This result demonstrates the potential of the PAP as a technique for the study of the optical properties of defects in semiconductors.

Growth mechanisms in molecular beam epitaxy for GaN-(In,Ga)N core-shell nanowires emitting in the green spectral range.

Using molecular beam epitaxy, we demonstrate the growth of (In,Ga)N shells emitting in the green spectral range around very thin (35 nm diameter) GaN core nanowires. These GaN nanowires are obtained by self-assembled growth on TiN. We present a qualitative shell growth model accounting for both the three-dimensional nature of the nanostructures as well as the directionality of the atomic fluxes. This model allows us, on the one hand, to optimise the conditions for high and homogeneous In incorporation and, on the other hand, to explain the influence of changes in the growth conditions on the sample morphology and In content. Specifically, the impact of the V/III and In/Ga flux ratios, the rotation speed and the rotation direction are investigated. Notably, with In acting as surfactant, the ternary (In,Ga)N shells are much more homogeneous in thickness along the nanowire length than their binary GaN counterparts.

Optical absorption enhancement in inhomogeneous InGaN nanowire arrays photocathode.

In the development of surface structures, nanowire arrays (NWAS) have been widely studied because of their trapping effect. In this paper, the finite difference time domain (FDTD) method is used to simulate homogeneous and inhomogeneous NWAS. We studied the influence of the structural parameters of InGaN NWAS and inhomogeneous arrays on optical response properties. The optical response includes light absorptivity and cutoff wavelength sensitivity. The simulation results show that the inhomogeneous NWAS can increase the effective transmission distance of light on the surface, thus greatly improving the optical absorption capacity of InGaN NWAS. We can obtain high sensitivity of cut-off wavelength by adjusting the structural parameters of the side nanowires. We find that by reducing the diameters and heights of the side nanowires, a higher light absorption rate can be obtained, which is a 5% improvement compared to uniform NWAS. Therefore, the research in this paper can provide some theoretical reference for the experiment and preparation of InGaN photocathodes.

Inhomogeneous spatial distribution of non radiative recombination centers in GaN/InGaN nanowire heterostructures studied by cathodoluminescence.

In order to elucidate the mechanisms responsible for cathodoluminescence intensity variations at the scale of single InGaN/GaN nanowire heterostructures, a methodology is proposed based on a statistical analysis on ensembles of several hundreds of nanowires exhibiting a diameter of 180, 240 and 280 nm. For 180 nm diameter, we find that intensitiy variations are consistent with incorporation of point defects obeying Poisson's statistics. For wider diameters, intensity variations at the scale of single NWs are observed and assigned to local growth conditions fluctuations. Finally, for the less luminescent nanowires, a departure from Poisson's statistics is observed suggesting the possible clustering of non independent point defects.

Integration of Ag Plasmonic Metal and WO3/InGaN Heterostructure for Photoelectrochemical Water Splitting.

In this study, a Ag/WO3/InGaN hybrid heterostructure was successfully developed by sputtering and molecular beam epitaxy techniques, to obtain unique Ag nanospheres adorned with cauliflower-like WO3 nanostructure over the InGaN nanorods (NRs). Exploiting the localized surface plasmon resonance of Ag, the Ag/WO3/InGaN heterostructure exhibited superior photoabsorption ability in the visible region (400-700 nm) of the solar spectrum, with a surface plasmon resonance band centered around 440 nm. Comprehensive analysis through photoluminescence spectroscopy, photocurrent measurements, and electrochemical impedance spectroscopy revealed that the Ag/WO3/InGaN hybrid heterostructure significantly enhances the charge carrier separation and transfer kinetics leading to improved overall photoelectrochemical (PEC) performance. The photocurrent density of the Ag/WO3/InGaN photoanode is 1.17 mA/cm2, which is about 2.72 times higher than that of pure InGaN NRs under visible light irradiation. The photoanode exhibited excellent stability for about 12 h. From the study, it has been found that the maximum applied bias photon-to-current efficiency (ABPE) is ∼1.67% at the applied bias of 0.6 V. The improved PEC water splitting efficiency of the Ag/WO3/InGaN photoanode is attributed to the synergistic effects of localized surface plasmon resonance (LSPR), efficient charge carrier separation and transport, and the presence of a Schottky junction. Consequently, the plasmonic metal-assisted heterojunction-based semiconductor Ag/WO3/InGaN demonstrates immense potential for practical applications in photoelectrochemical water splitting.

Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications.

In this study, we have demonstrated the potential of InGaN-based red micro-LEDs with single quantum well (SQW) structure for visible light communication applications. Our findings indicate the SQW sample has a better crystal quality, with high-purity emission, a narrower full width at half maximum, and higher internal quantum efficiency, compared to InGaN red micro-LED with a double quantum wells (DQWs) structure. The InGaN red micro-LED with SQW structure exhibits a higher maximum external quantum efficiency of 5.95% and experiences less blueshift as the current density increases when compared to the DQWs device. Furthermore, the SQW device has a superior modulation bandwidth of 424 MHz with a data transmission rate of 800 Mbit/s at an injection current density of 2000 A/cm2. These results demonstrate that InGaN-based SQW red micro-LEDs hold great promise for realizing full-color micro-display and visible light communication applications.

InGaN/GaN superlattice underlayer for fabricating of red nanocolumnµ-LEDs with (10-11) plane InGaN/AlGaN MQWs.

In this study, the growth behavior of Indium gallium nitride (InGaN)-based nanocolumn arrays was investigated, and red emission nanocolumn micro-light emitting diodes (µ-LEDs) were fabricated. The internal structure of the InGaN/GaN superlattice (SL) layer under the multiple-quantum-well (MQW) active layers was evaluated using scanning transmission electron microscopy (STEM) analysis. It was revealed that the InGaN crystal plane at the top of the nanocolumn changed from the c-plane, (1-102) plane, to the (10-11) plane as the number of SL pairs increased. A semipolar (10-11) plane was completely formed on top of the nanocolumn by growing InGaN/GaN SLs over 15-20 pairs, where the InGaN/GaN SL layers were uniformly piled up, maintaining the (10-11) plane. Therefore, when InGaN/AlGaN MQWs were grown on the (10-11) plane InGaN/GaN SL layer, the growth of the (10-11) plane semipolar InGaN active layers was observed in the high-angle annular dark field (HAADF)-STEM image. Moreover, the acute nanocolumn top of the (10-11) plane of the InGaN/GaN SL underlayer did not contribute to the formation of the c-plane InGaN core region. Red nanocolumnµ-LEDs with anφ12µm emission window were fabricated using the (10-11) plane MQWs to obtain the external quantum efficiency of 1.01% at 51 A cm-2. The process of nanocolumnµ-LEDs suitable for the smaller emission windows was provided, where the flat p-GaN contact layer contributed to forming a fine emission window ofφ5µm.