Suppressing Formation of Buried Defects during Annealing Enables Bright Perovskite Light-Emitting Diodes.

Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) is a promising hole-transporting material for perovskite light-emitting diodes (PeLEDs). However, intrinsic luminance quenching at the PEDOT:PSS/perovskite interface causes deterioration of performance. Here, we develop a facile and effective strategy to passivate the interface defects via the modification of PEDOT:PSS by l-norvaline. As a pre-buried additive, l-norvaline not only reacts with PEDOT:PSS, but also forms the coordination and hydrogen bond with perovskite. We demonstrated that the generation of buried defects at the PEDOT:PSS/perovskite interface originates from the crystallization process of the perovskite film during annealing by in-situ photoluminescence measurements. The surface of l-norvaline-modified PEDOT:PSS can passivate the interfacial defects and inhibit exciton quenching. As a result, the PeLED shows a good device performance with a luminance of 80089 cd m-2 at 509 nm and an external quantum efficiency of 13.04%.

High-Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback.

Focused ion beam implantation is ideally suited for placing defect centers in wide bandgap semiconductors with nanometer spatial resolution. However, the fact that only a few percent of implanted defects can be activated to become efficient single photon emitters prevents this powerful capability to reach its full potential in photonic/electronic integration of quantum defects. Here an industry adaptive scalable technique is demonstrated to deterministically create single defects in commercial grade silicon carbide by performing repeated low ion number implantation and in situ photoluminescence evaluation after each round of implantation. An array of 9 single defects in 13 targeted locations is successfully created-a ≈70% yield which is more than an order of magnitude higher than achieved in a typical single pass ion implantation. The remaining emitters exhibit non-classical photon emission statistics corresponding to the existence of at most two emitters. This approach can be further integrated with other advanced techniques such as in situ annealing and cryogenic operations to extend to other material platforms for various quantum information technologies.

Real-Time Diagnostics of 2D Crystal Transformations by Pulsed Laser Deposition: Controlled Synthesis of Janus WSSe Monolayers and Alloys.

Energetic processing methods such as hyperthermal implantation hold special promise to achieve the precision synthesis of metastable two-dimensional (2D) materials such as Janus monolayers; however, they require precise control. Here, we report a feedback approach to reveal and control the transformation pathways in materials synthesis by pulsed laser deposition (PLD) and apply it to investigate the transformation kinetics of monolayer WS2 crystals into Janus WSSe and WSe2 by implantation of Se clusters with different maximum kinetic energies (<42 eV/Se-atom) generated by laser ablation of a Se target. Real-time Raman spectroscopy and photoluminescence are used to assess the structure, composition, and optoelectronic quality of the monolayer crystal as it is implanted with well-controlled fluxes of selenium for different kinetic energies that are regulated with in situ ICCD imaging, ion probe, and spectroscopy diagnostics. First-principles calculations, XPS, and atomic-resolution HAADF STEM imaging are used to understand the intermediate alloy compositions and their vibrational modes to identify transformation pathways. The real-time kinetics measurements reveal highly selective top-layer conversion as WS2 transforms through WS2(1-x)Se2x alloys to WSe2 and provide the means to adjust processing conditions to achieve fractional and complete Janus WSSe monolayers as metastable transition states. The general approach demonstrates a real-time feedback method to achieve Janus layers or other metastable alloys of the desired composition, and a general means to adjust the structure and quality of materials grown by PLD, addressing priority research directions for precision synthesis with real-time adaptive control.

Nickel clusters accelerating hierarchical zinc indium sulfide nanoflowers for unprecedented visible-light hydrogen production.

As a typical two-dimensional (2D) metal chalcogenides and visible-light responsive semiconductor, zinc indium sulfide (ZnIn2S4) has attracted much attention in photocatalysis. However, the high recombination rate of photogenerated electrons and holes seriously limits its performance for hydrogen production. In this work, we report in-situ photodeposition of Ni clusters in hierarchical ZnIn2S4 nanoflowers (Ni/ZnIn2S4) to achieve unprecedented photocatalytic hydrogen production. The Ni clusters not only provide plenty of active sites for reactions as evidenced by in-situ photoluminescence measurement, but also effectively accelerate the separation and migration of the photogenerated electrons and holes in ZnIn2S4. Consequently, the Ni/ZnIn2S4 composites exhibit good stability and reusability with highly enhanced visible-light hydrogen production. In particular, the best Ni/ZnIn2S4 photocatalyst exhibits an unprecedented hydrogen production rate of 22.2 mmol·h-1·g-1, 10.6 times that of the pure ZnIn2S4 (2.1 mmol·h-1·g-1). And its apparent quantum yield (AQY) is as high as 56.14% under 450 nm monochromatic light. Our work here suggests that depositing non-precious Ni clusters in ZnIn2S4 is quite promising for the potential practical photocatalysis in solar energy conversion.

Mechanism of Additive-Assisted Room-Temperature Processing of Metal Halide Perovskite Thin Films.

Perovskite solar cells have received substantial attention due to their potential for low-cost photovoltaic devices on flexible or rigid substrates. Thiocyanate (SCN)-containing additives, such as MASCN (MA = methylammonium), have been shown to control perovskite film crystallization and the film microstructure to achieve effective room-temperature perovskite absorber processing. Nevertheless, the crystallization pathways and mechanisms of perovskite formation involved in MASCN additive processing are far from clear. Using in situ X-ray diffraction and photoluminescence, we investigate the crystallization pathways of MAPbI3 and reveal the mechanisms of additive-assisted perovskite formation during spin coating and subsequent N2 drying. We confirm that MASCN induces large precursor aggregates in solution and, during spin coating, promotes the formation of the perovskite phase with lower nucleation density and overall larger initial nuclei size, which forms upon reaching supersaturation in solution, in addition to intermediate solvent-complex phases. Finally, during the subsequent N2 drying, MASCN facilitates the dissociation of these precursor aggregates and the solvate phases, leading to further growth of the perovskite crystals. Our results show that the nature of the intermediate phases and their formation/dissociation kinetics determine the nucleation and growth of the perovskite phase, which subsequently impact the film microstructure. These findings provide mechanistic insights underlying room-temperature, additive-assisted perovskite processing and help guide further development of such facile room-temperature synthesis routes.

In Situ Photoluminescence of Colloidal Quantum Dots During Gas Exposure-The Role of Water and Reactive Atomic Layer Deposition Precursors.

Colloidal quantum dots (QDs) are a promising material for optoelectronic applications. Typically, device integration requires QDs to be embedded in a host material. Atomic layer deposition (ALD) is often considered as a deposition technique for such purposes. However, it is known that ALD and vacuum processes often influence the optical properties of QDs in a negative way. Here, we describe an in situ photoluminescence (PL) measurement setup and use it to monitor the PL of QDs under vacuum and during ALD. For CdSe-based core/shell QDs, a reduction in the QD PL was observed upon exposure to vacuum. Water was identified as crucial for maintaining a high PL as evidenced by re-exposure to different gases. Furthermore, we addressed the influence of vacuum, different plasmas (O2, H2O, H2, H2S/Ar, and Ar), precursors (trimethylaluminum, diethylzinc, tetrakis(dimethylamido)titanium, and tetrakis(ethylmethylamido)hafnium), reactants (H2O, H2S, and O3), and ALD processes (Al2O3, TiO2, HfO2, and ZnS) on QDs. We observed a PL reduction by up to 90% upon plasma treatments. Furthermore, we found that trimethylaluminum and diethylzinc reduced the PL efficiency by more than 70% while exposure to tetrakis(dimethylamido)titanium and tetrakis(ethylmethylamido)hafnium lowered the PL by only 10-20%. Surprisingly, tetrakis(dimethylamido)titanium and H2O, which by themselves had only a minor influence on the QD PL, still caused an 80% drop of the PL efficiency when combined as an ALD process. On the other hand, ALD growth of HfO2 by combining tetrakis(ethylmethylamido)hafnium and O3 preserved 80% of the initial PL quantum yield, making it a promising process for QD embedding. These results put forward in situ PL measurements as a versatile technique to identify suitable precursors, reactants and ALD processes for QD embedding and investigate the interaction between QDs and reactive gaseous species in general.

In Situ PL and SPV Monitored Charge Carrier Injection During Metal Assisted Etching of Intrinsic a-Si Layers on c-Si.

Although hydrogenated amorphous silicon is already widely examined regarding its structural and electronic properties, the chemical etching behavior of this material is only roughly understood. We present a detailed study of the etching properties of intrinsic hydrogenated amorphous silicon, (i)a-Si:H, layers on crystalline silicon, c-Si, within the framework of metal assisted chemical etching (MACE) using silver nanoparticles (Ag NPs). The etching processes are examined by in situ photoluminescence (PL) and in situ surface photovoltage (SPV) measurements, as these techniques allow a monitoring of the hole injection that takes place during MACE. By in situ PL measurements and SEM images, we could interpret the different stages of the MACE process of (i)a-Si:H layers and determine etch rates of (i)a-Si:H, that are found to be influenced by the size of the Ag NPs. In situ PL and in situ SPV measurements both enable researchers to determine when the Ag NPs reach the (i)a-Si:H/c-Si interface. Furthermore, a preferential MACE of (i)a-Si:H versus c-Si is revealed for the first time. This effect could be explained by an interplay of the different thermodynamic and structural properties of the two materials as well as by hole injection during MACE resulting in a field effect passivation. The presented results allow an application of the examined MACE processes for Si nanostructuring applications.