Dynamic Effects Analysis in Fractional Memristor-Based Rulkov Neuron Model.

Mathematical models such as Fitzhugh-Nagoma and Hodgkin-Huxley models have been used to understand complex nervous systems. Still, due to their complexity, these models have made it challenging to analyze neural function. The discrete Rulkov model allows the analysis of neural function to facilitate the investigation of neuronal dynamics or others. This paper introduces a fractional memristor Rulkov neuron model and analyzes its dynamic effects, investigating how to improve neuron models by combining discrete memristors and fractional derivatives. These improvements include the more accurate generation of heritable properties compared to full-order models, the treatment of dynamic firing activity at multiple time scales for a single neuron, and the better performance of firing frequency responses in fractional designs compared to integer models. Initially, we combined a Rulkov neuron model with a memristor and evaluated all system parameters using bifurcation diagrams and the 0-1 chaos test. Subsequently, we applied a discrete fractional-order approach to the Rulkov memristor map. We investigated the impact of all parameters and the fractional order on the model and observed that the system exhibited various behaviors, including tonic firing, periodic firing, and chaotic firing. We also found that the more I tend towards the correct order, the more chaotic modes in the range of parameters. Following this, we coupled the proposed model with a similar one and assessed how the fractional order influences synchronization. Our results demonstrated that the fractional order significantly improves synchronization. The results of this research emphasize that the combination of memristor and discrete neurons provides an effective tool for modeling and estimating biophysical effects in neurons and artificial neural networks.

Flexible Artificial Ag NPs:a-SiC0.11:H Synapse on Al Foil with High Uniformity and On/Off Ratio for Neuromorphic Computing.

A neuromorphic computing network based on SiCx memristor paves the way for a next-generation brain-like chip in the AI era. Up to date, the SiCx-based memristor devices are faced with the challenge of obtaining flexibility and uniformity, which can push forward the application of memristors in flexible electronics. For the first time, we report that a flexible artificial synaptic device based on a Ag NPs:a-SiC0.11:H memristor can be constructed by utilizing aluminum foil as the substrate. The device exhibits stable bipolar resistive switching characteristic even after bending 1000 times, displaying excellent flexibility and uniformity. Furthermore, an on/off ratio of approximately 107 can be obtained. It is found that the incorporation of silver nanoparticles significantly enhances the device's set and reset voltage uniformity by 76.2% and 69.7%, respectively, which is attributed to the contribution of the Ag nanoparticles. The local electric field of Ag nanoparticles can direct the formation and rupture of conductive filaments. The fitting results of I-V curves show that the carrier transport mechanism agrees with Poole-Frenkel (P-F) model in the high-resistance state, while the carrier transport follows Ohm's law in the low-resistance state. Based on the multilevel storage characteristics of the Al/Ag NPs:a-SiC0.11:H/Al foil resistive switching device, we successfully observed the biological synaptic characteristics, including the long-term potentiation (LTP), long-term depression (LTD), and spike-timing-dependent plasticity (STDP). The flexible artificial Ag NPs:a-SiC0.11:H/Al foil synapse possesses excellent conductance modulation capabilities and visual learning function, demonstrating the promise of application in flexible electronics technology for high-efficiency neuromorphic computing in the AI period.

Diffusive Memristor with CuS Nanoparticles Embedded in Polymeric Film as Artificial Nociceptor.

The threshold behavior and the ion diffusion dynamics in diffusive volatile memristors have a very uncanny resemblance to the transduction process of biological nociceptors. Hence, the diffusive memristors are considered the most suited for making artificial nociceptive systems. To facilitate their widespread adoption, it is imperative to develop polymeric or organic-inorganic hybrid material-based diffusive memristors that are economical, biocompatible, and easily processable. In this study, we present a cluster-type polymeric diffusive memristor where copper is used as the active top electrode. The switching medium comprises copper(II) sulfide (CuS) nanoparticles embedded in poly(ethylene oxide) (PEO). The devices show electrochemical metalization (ECM)-type and bidirectional diffusive volatile memory with high nonlinearity (104) and turn-on slope (5.6 mV/dec). They reliably remain diffusive volatile with up to 10 wt % CuS in PEO and for a wide range of compliance (10-6 to 10-2 A) without transitioning to the bipolar nonvolatile type. The low reduction potential of CuS and optimal segmental dynamics of PEO work synergistically to ensure stable and reproducible diffusive memory. The CuS nanoparticles act as bipolar electrodes, undergoing local oxidation and reduction under the influence of the bias. The switching of resistance states in the CuS-PEO memristors is attributed to the formation of cluster-type filaments between CuS nanoparticles within the PEO matrix supported by the participation of copper ions from the top Cu electrode. The observation of low filament temperature and the independence of on-state resistance with respect to the device area and temperature further corroborate the cluster-type filament in CuS-PEO memristors. Using a 5 wt % CuS-based device, an artificial nociceptor is realized, which successfully mimics most of the nociceptive plasticities such as threshold, relaxation, no adaptation, and sensitization.

Weight Update in Ferroelectric Memristors with Identical and Nonidentical Pulses.

Ferroelectric tunnel junctions (FTJs) are a class of memristor which promise low-power, scalable, field-driven analog operation. In order to harness their full potential, operation with identical pulses is targeted. In this paper, several weight update schemes for FTJs are investigated, using either nonidentical or identical pulses, and with time delays between the pulses ranging from 1 µs to 10 s. Experimentally, a method for achieving nonlinear weight update with identical pulses at long programming delays is demonstrated by limiting the switching current via a series resistor. Simulations show that this concept can be expanded to achieve weight update in a 1T1C cell by limiting the switching current through a transistor operating in subthreshold or saturation mode. This leads to a maximum linearity in the weight update of 86% for a dynamic range (maximum switched polarization) of 30 µC/cm2. It is further demonstrated via simulation that engineering the device to achieve a narrower switching peak increases the linearity in scaled devices to >93% for the same range.

Deep brain stimulation and lag synchronization in a memristive two-neuron network.

In the pursuit of potential treatments for neurological disorders and the alleviation of patient suffering, deep brain stimulation (DBS) has been utilized to intervene or investigate pathological neural activities. To explore the exact mechanism of how DBS works, a memristive two-neuron network considering DBS is newly proposed in this work. This network is implemented by coupling two-dimensional Morris-Lecar neuron models and using a memristor synaptic synapse to mimic synaptic plasticity. The complex bursting activities and dynamical effects are revealed numerically through dynamical analysis. By examining the synchronous behavior, the desynchronization mechanism of the memristor synapse is uncovered. The study demonstrates that synaptic connections lead to the appearance of time-lagged or asynchrony in completely synchronized firing activities. Additionally, the memristive two-neuron network is implemented in hardware based on FPGA, and experimental results confirm the abundant neuronal electrical activities and chaotic dynamical behaviors. This work offers insights into the potential mechanisms of DBS intervention in neural networks.

Optoelectronic neuron based on transistor combined with volatile threshold switching memristors for neuromorphic computing.

The human perception and learning heavily rely on the visual system, where the retina plays a vital role in preprocessing visual information. Developing neuromorphic vision hardware is based on imitating the neurobiological functions of the retina. In this work, an optoelectronic neuron is developed by combining a gate-modulated PDVT-10 channel with a volatile threshold switching memristor, enabling the achievement of optoelectronic performance through a resistance-matching mechanism. The optoelectronic spiking neuron exhibits the ability to alter its spiking behavior in a manner resembling that of a retina. Incorporating electrical and optical modulation, the artificial neuron accurately replicates neuronal signal transmission in a biologically manner. Moreover, it demonstrates inhibition of neuronal firing during darkness and activation upon exposure to light. Finally, the evaluation of a perceptron spiking neural network utilizing these leaky integrate-and-fire neurons is conducted through simulation to assess its capability in classifying image recognition algorithms. This research offers a hopeful direction for the development of easily expandable and hierarchically structured spiking electronics, broadening the range of potential applications in biomimetic vision within the emerging field of neuromorphic hardware.

Energy Efficient Memristor Based on Green-Synthesized 2D Carbonyl-Decorated Organic Polymer and Application in Image Denoising and Edge Detection: Toward Sustainable AI.

According to the United Nations, around 53 million metric tons of electronic waste is produced every year, worldwide, the big majority of which goes unprocessed. With the rapid advances in AI technologies and adoption of smart gadgets, the demand for powerful logic and memory chips is expected to boom. Therefore, the development of green electronics is crucial to minimizing the impact of the alarmingly increasing e-waste. Here, it is shown the application of a green synthesized, chemically stable, carbonyl-decorated 2D organic, and biocompatible polymer as an active layer in a memristor device, sandwiched between potentially fully recyclable electrodes. The 2D polymer's ultramicro channels, decorated with C═O and O─H groups, efficiently promote the formation of copper nanofilaments. As a result, the device shows excellent bipolar resistive switching behavior with the potential to mimic synaptic plasticity. A large resistive switching window (103), low SET/RESET voltage of ≈0.5/-1.5 V), excellent device-to-device stability and synaptic features are demonstrated. Leveraging the device's synaptic characteristics, its applications in image denoising and edge detection is examined. The results show a reduction in power consumption by a factor of 103 compared to a traditional Tesla P40 graphics processing unit, indicating great promise for future sustainable AI-based applications.

Scalable Layer-Controlled Oxidation of Bi2O2Se for Self-Rectifying Memristor Arrays With sub-pA Sneak Currents.

Smart memristors with innovative properties are crucial for the advancement of next-generation information storage and bioinspired neuromorphic computing. However, the presence of significant sneak currents in large-scale memristor arrays results in operational errors and heat accumulation, hindering their practical utility. This study successfully synthesizes a quasi-free-standing Bi2O2Se single-crystalline film and achieves layer-controlled oxidation by developing large-scale UV-assisted intercalative oxidation, resulting ß-Bi2SeO5/Bi2O2Se heterostructures. The resulting ß-Bi2SeO5/Bi2O2Se memristor demonstrates remarkable self-rectifying resistive switching performance (over 105 for ON/OFF and rectification ratios, as well as nonlinearity) in both nanoscale (through conductive atomic force microscopy) and microscale (through memristor array) regimes. Furthermore, the potential for scalable production of self-rectifying ß-Bi2SeO5/Bi2O2Se memristor, achieving sub-pA sneak currents to minimize cross-talk effects in high-density memristor arrays is demonstrated. The memristors also exhibit ultrafast resistive switching (sub-100 ns) and low power consumption (1.2 pJ) as characterized by pulse-mode testing. The findings suggest a synergetic effect of interfacial Schottky barriers and oxygen vacancy migration as the self-rectifying switching mechanism, elucidated through controllable ß-Bi2SeO5 thickness modulation and theoretical ab initio calculations.

Bioactive Ion-Confined Ultracapacitive Memristors with Neuromorphic Functions.

The field of bioinspired iontronics, bridging electronic devices and ionic systems, has multiple biological applications. Carbon-based ultracapacitive devices hold promise for controlling bioactive ions via electric double layers due to their high-surface-area and biocompatible porous carbon electrodes. However, the interplay between complex bioactive ions and porous carbons remains unclear due to the variety of structures of bioactive ions present in biological systems. Herein, we investigate the adsorption behavior of a series of bioactive ammonium-based cations with varying alkyl chain lengths in nanoporous carbons. We find that strong physisorption results from the synergistic hydrophobic interaction and electrostatic attraction between porous carbons (with a negative zeta potential) and bioactive cations. Bioactive cations with varying alkyl chain lengths can be irreversibly physically adsorbed and confined within nanoporous carbons resulting in anion enrichment and depletion during electric polarization. This situation, in turn, results in a characteristic memristive behavior in all-carbon capacitive ionic memristor devices. Our findings highlight the relationship between the resistance state of the memristor and ion adsorption mechanisms in all-carbon capacitive devices, which hold potential for future transmitter delivery, biointerfacing, and neuromorphic devices.

Neural Functions Enabled by a Polarity-Switchable Nanofluidic Memristor.

Reproducing neural functions with artificial nanofluidic systems has long been an aspirational goal for neuromorphic computing. In this study, neural functions, such as neural activation and synaptic plasticity, are successfully accomplished with a polarity-switchable nanofluidic memristor (PSNM), which is based on the anodized aluminum oxide (AAO) nanochannel array. The PSNM has unipolar memristive behavior at high electrolyte concentrations and bipolar memristive behavior at low electrolyte concentrations, which can emulate neural activation and synaptic plasticity, respectively. The mechanisms for the unipolar and bipolar memristive behaviors are related to the polyelectrolytic Wien (PEW) effect and ion accumulation/depletion effect, respectively. These findings are beneficial to the advancement of neuromorphic computing on nanofluidic platforms.

A Self-Driven Ga2O3 Memristor Synapse for Humanoid Robot Learning.

In recent years, the rapid development of brain-inspired neuromorphic systems has created an imperative demand for artificial photonic synapses that operate with low power consumption. In this study, a self-driven memristor synapse based on gallium oxide (Ga2O3) nanowires is proposed and demonstrated successfully. This memristor synapse is capable of emulating a range of functionalities of biological synapses when exposed to 255 nm light stimulation. These functionalities encompass peak time-dependent plasticity, pulse facilitation, and memory learning capabilities. It exhibits an ultrahigh paired-pulse facilitation index of 158, indicating exceptional learning performance. The transition from short-term memory to long-term memory can be attributed to the remarkable relearning capabilities. Furthermore, the potential applications of the memristor synapse is showcased through the successful manipulation of a humanoid intelligent robot. Upon establishing artificial intelligence (AI) systems, the control commands originating from the synaptic device can drive the humanoid robot to perform various actions. Based on the memristor synapses, the autonomous feedback system of the humanoid robot facilitates a good collaboration between robotic actions and bio-inspired light perception. Therefore, this research opens up an effective way to advance the development of neuromorphic computing technologies, AI systems, and intelligent robots that demand ultra-low energy consumption.

Light-Adapted Optoelectronic-Memristive Device for the Artificial Visual System.

With the development of artificial intelligence systems, it is necessary to develop optoelectronic devices with photoresponse and storage capacity to simulate human visual perception systems. The key to an artificial visual perception system is to integrate components with both sensing and storage capabilities of illumination information. Although module integration components have made useful progress, they still face challenges such as multispectral response and high energy consumption. Here, we developed a light-adapted optoelectronic-memristive device integrated by an organic photodetector and ferroelectric-based memristor to simulate human visual perception. ITO/P3HT:PC71BM/Au as the light sensor unit shows a high on/off ratio (Iph/Id) reaching ∼5 × 104 at 0 V. The memristor unit, consisting of ITO/CBI@P(VDF-TrFE)/Cu, has a RON/ROFF ratio window of ∼106 under 0.05 V read voltage and ultralow power consumption of ∼1 pW. Moreover, the artificial visual perception unit shows stable light-adapted memory windows under different wavelengths of irradiation light (400, 500, and 600 nm; they meet the spectral range of human visual recognition) and can clearly identify the target image ("T" shape) because of the apparent contrast, which results from the high ROFF/RON ratio values. These results provide a potential design strategy for the development of intelligent artificial vision systems.

Advances on MXene-Based Memristors for Neuromorphic Computing: A Review on Synthesis, Mechanisms, and Future Directions.

Neuromorphic computing seeks to replicate the capabilities of parallel processing, progressive learning, and inference while retaining low power consumption by drawing inspiration from the human brain. By further overcoming the constraints imposed by the traditional von Neumann architecture, this innovative approach has the potential to revolutionize modern computing systems. Memristors have emerged as a solution to implement neuromorphic computing in hardware, with research based on developing functional materials for resistive switching performance enhancement. Recently, two-dimensional MXenes, a family of transition metal carbides, nitrides, and carbonitrides, have begun to be integrated into these devices to achieve synaptic emulation. MXene-based memristors have already demonstrated diverse neuromorphic characteristics while enhancing the stability and reducing power consumption. The possibility of changing the physicochemical properties through modifications of the surface terminations, bandgap, interlayer spacing, and oxidation for each existing MXene makes them very promising. Here, recent advancements in MXene synthesis, device fabrication, and characterization of MXene-based neuromorphic artificial synapses are discussed. Then, we focus on understanding the resistive switching mechanisms and how they connect with theoretical and experimental data, along with the innovations made during the fabrication process. Additionally, we provide an in-depth review of the neuromorphic performance, making a connection with the resistive switching mechanism, along with a compendium of each relevant performance factor for nonvolatile and volatile applications. Finally, we state the remaining challenges in MXene-based devices for artificial synapses and the next steps that could be taken for future development.

Picosecond Femtojoule Resistive Switching in Nanoscale VO2 Memristors.

Beyond-Moore computing technologies are expected to provide a sustainable alternative to the von Neumann approach not only due to their down-scaling potential but also via exploiting device-level functional complexity at the lowest possible energy consumption. The dynamics of the Mott transition in correlated electron oxides, such as vanadium dioxide, has been identified as a rich and reliable source of such functional complexity. However, its full potential in high-speed and low-power operation has been largely unexplored. We fabricated nanoscale VO2 devices embedded in a broadband test circuit to study the speed and energy limitations of their resistive switching operation. Our picosecond time-resolution, real-time resistive switching experiments and numerical simulations demonstrate that tunable low-resistance states can be set by the application of 20 ps long, <1.7 V amplitude voltage pulses at 15 ps incubation times and switching energies starting from a few femtojoule. Moreover, we demonstrate that at nanometer-scale device sizes not only the electric field induced insulator-to-metal transition but also the thermal conduction limited metal-to-insulator transition can take place at time scales of 100s of picoseconds. These orders of magnitude breakthroughs can be utilized to design high-speed and low-power dynamical circuits for a plethora of neuromorphic computing applications from pattern recognition to numerical optimization.

Electronically Reconfigurable Memristive Neuron Capable of Operating in Both Excitation and Inhibition Modes.

Threshold switching (TS) memristors are promising candidates for artificial neurons in neuromorphic systems. However, they often lack biological plausibility, typically functioning solely in an excitation mode. The absence of an inhibitory mode limits neurons' ability to synergistically process both excitatory and inhibitory synaptic signals. To address this limitation, we propose a novel memristive neuron capable of operating in both excitation and inhibition modes. The memristor's threshold voltage can be reversibly tuned using voltages of different polarities because of its bipolar TS behavior, enabling the device to function as an electronically reconfigurable bi-mode neuron. A variety of neuronal activities such as all-or-nothing behavior and tunable firing probability are mimicked under both excitatory and inhibitory stimuli. Furthermore, we develop a self-adaptive neuromorphic vision sensor based on bi-mode neurons, demonstrating effective object recognition in varied lighting conditions. Thus, our bi-mode neuron offers a versatile platform for constructing neuromorphic systems with rich functionality.

Memristive Architectures Exploiting Self-Compliance Multilevel Implementation on 1 kb Crossbar Arrays for Online and Offline Learning Neuromorphic Applications.

This paper suggests the practical implications of utilizing a high-density crossbar array with self-compliance (SC) at the conductive filament (CF) formation stage. By limiting the excessive growth of CF, SC functions enable the operation of a crossbar array without access transistors. An AlOx/TiOy, internal overshoot limitation structure, allows the SC to have resistive random-access memory. In addition, an overshoot-limited memristor crossbar array makes it possible to implement vector-matrix multiplication (VMM) capability in neuromorphic systems. Furthermore, AlOx/TiOy structure optimization was conducted to reduce overshoot and operation current, verifying uniform bipolar resistive switching behavior and analog switching properties. Additionally, extensive electric pulse stimuli are confirmed, evaluating long-term potentiation (LTP), long-term depression (LTD), and other forms of synaptic plasticity. We found that LTP and LTD characteristics for training an online learning neural network enable MNIST classification accuracies of 92.36%. The SC mode quantized multilevel in offline learning neural networks achieved 95.87%. Finally, the 32 × 32 crossbar array demonstrated spiking neural network-based VMM operations to classify the MNIST image. Consequently, weight programming errors make only a 1.2% point of accuracy drop to software-based neural networks.

Self-Induced Light Emission in Solid-State Memristors Replicates Neuronal Biophotons.

Key neuronal functions have been successfully replicated in various hardware systems. Noticeable examples are neuronal networks constructed from memristors, which emulate complex electrochemical biological dynamics such as the efficacy and plasticity of a neuron. Neurons are highly active cells, communicating with chemical and electrical stimuli, but also emit light. These so-called biophotons are suspected to be a complementary vehicle to transport information across the brain. Here, we show that a memristor also releases photons during its operation akin to the production of neuronal light. Critical attributes of biophotons, such as self-generation, stochasticity, spectral coverage, sparsity, and correlation with the neuron's electrical activity, are replicated by our solid-state approach. Importantly, our time-resolved analysis of the correlated current transport and photon activity shows that emission takes place within a nanometer-sized active area and relies on electrically induced single-to-few active electroluminescent centers excited with moderate voltage (<3 V). Our findings further extend the emulating capability of a memristor to encompass neuronal optical activity and allow to construct memristive atomic-scale devices capable of handling simultaneously electrons and photons as information carriers.

Dual Redox-active Covalent Organic Framework-based Memristors for Highly-efficient Neuromorphic Computing.

Organic memristors based on covalent organic frameworks (COFs) exhibit significant potential for future neuromorphic computing applications. The preparation of high-quality COF nanosheets through appropriate structural design and building block selection is critical for the enhancement of memristor performance. In this study, a novel room-temperature single-phase method was used to synthesize Ta-Cu3 COF, which contains two redox-active units: trinuclear copper and triphenylamine. The resultant COF nanosheets were dispersed through acid-assisted exfoliation and subsequently spin-coated to fabricate a high-quality COF film on an indium tin oxide (ITO) substrate. The synergistic effect of the dual redox-active centers in the COF film, combined with its distinct crystallinity, significantly reduces the redox energy barrier, enabling the efficient modulation of 128 non-volatile conductive states in the Al/Ta-Cu3 COF/ITO memristor. Utilizing a convolutional neural network (CNN) based on these 128 conductance states, image recognition for ten representative campus landmarks was successfully executed, achieving a high recognition accuracy of 95.13% after 25 training epochs. Compared to devices based on binary conductance states, the memristor with 128 conductance states exhibits a 45.56% improvement in recognition accuracy and significantly enhances the efficiency of neuromorphic computing.

A novel memristive neuron model and its energy characteristics.

The functional neurons are basic building blocks of the nervous system and are responsible for transmitting information between different parts of the body. However, it is less known about the interaction between the neuron and the field. In this work, we propose a novel functional neuron by introducing a flux-controlled memristor into the FitzHugh-Nagumo neuron model, and the field effect is estimated by the memristor. We investigate the dynamics and energy characteristics of the neuron, and the stochastic resonance is also considered by applying the additive Gaussian noise. The intrinsic energy of the neuron is enlarged after introducing the memristor. Moreover, the energy of the periodic oscillation is larger than that of the adjacent chaotic oscillation with the changing of memristor-related parameters, and same results is obtained by varying stimuli-related parameters. In addition, the energy is proved to be another effective method to estimate stochastic resonance and inverse stochastic resonance. Furthermore, the analog implementation is achieved for the physical realization of the neuron. These results shed lights on the understanding of the firing mechanism for neurons detecting electromagnetic field.

Exponential synchronization of quaternion-valued memristor-based Cohen-Grossberg neural networks with time-varying delays: norm method.

In this paper, the exponential synchronization of quaternion-valued memristor-based Cohen-Grossberg neural networks with time-varying delays is discussed. By using the differential inclusion theory and the set-valued map theory, the discontinuous quaternion-valued memristor-based Cohen-Grossberg neural networks are transformed into an uncertain system with interval parameters. A novel controller is designed to achieve the control goal. With some inequality techniques, several criteria of exponential synchronization for quaternion-valued memristor-based Cohen-Grossberg neural networks are given. Different from the existing results using decomposition techniques, a direct analytical approach is used to study the synchronization problem by introducing an improved one-norm method. Moreover, the activation function is less restricted and the Lyapunov analysis process is simpler. Finally, a numerical simulation is given to prove the validity of the main results.