The interaction of Cu with Bi nanolines on H-passivated Si(001): an ab initio analysis.
J Phys Condens Matter
; 22(34): 345001, 2010 Sep 01.
Article
en En
| MEDLINE
| ID: mdl-21403245
ABSTRACT
In spite of the known tendency for Cu to be a fast diffuser inside bulk Si, it was recently shown that it presents a clear preference for migrating towards a hydrogen terminated Si(001) surface along the dimer rows; on a surface with Bi nanolines, this will drive the Cu towards the Bi nanolines. In this paper, we present a density functional theory study of the behaviour of Cu atoms near self-assembled Bi nanolines on the hydrogen-passivated Si(001) surface, predicting that Cu will attack the nanolines and insert in the Bi-Si bonds. The migration routes from subsurface locations and surface deposition are found and the pairing tendency for Cu is examined and compared to that for Ag on Bi nanolines.
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Base de datos:
MEDLINE
Idioma:
En
Revista:
J Phys Condens Matter
Asunto de la revista:
BIOFISICA
Año:
2010
Tipo del documento:
Article
País de afiliación:
Reino Unido