Engineering Chemically Active Defects in Monolayer MoS<sub>2</sub> Transistors via Ion-Beam Irradiation and Their Healing via Vapor Deposition of Alkanethiols.

Bertolazzi, Simone; Bonacchi, Sara; Nan, Guangjun; Pershin, Anton; Beljonne, David; Samorì, Paolo

Engineering Chemically Active Defects in Monolayer MoS₂ Transistors via Ion-Beam Irradiation and Their Healing via Vapor Deposition of Alkanethiols.

Bertolazzi, Simone; Bonacchi, Sara; Nan, Guangjun; Pershin, Anton; Beljonne, David; Samorì, Paolo.

Afiliación

Bertolazzi S; University of Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, F-67000, Strasbourg, France.
Bonacchi S; University of Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, F-67000, Strasbourg, France.
Nan G; Laboratory for Chemistry of Novel Materials, Université de Mons, Place du Parc 20, 7000, Mons, Belgium.
Pershin A; Laboratory for Chemistry of Novel Materials, Université de Mons, Place du Parc 20, 7000, Mons, Belgium.
Beljonne D; Laboratory for Chemistry of Novel Materials, Université de Mons, Place du Parc 20, 7000, Mons, Belgium.
Samorì P; University of Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, F-67000, Strasbourg, France.

Adv Mater ; 29(18)2017 May.

Article en En | MEDLINE | ID: mdl-28247435

Palabras clave

field-effect transistors; ion-beam irradiation; monolayer MoS2; sulfur vacancies; thiol chemistry

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Texto completo: 1 Base de datos: MEDLINE Tipo de estudio: Guideline Idioma: En Revista: Adv Mater Asunto de la revista: BIOFISICA / QUIMICA Año: 2017 Tipo del documento: Article País de afiliación: Francia

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