Operating behavior of micro-LEDs on a GaN substrate at ultrahigh injection current densities.
Opt Express
; 27(16): A1146-A1155, 2019 Aug 05.
Article
en En
| MEDLINE
| ID: mdl-31510496
ABSTRACT
Near-ultraviolet micro-LEDs with different diameters were fabricated on GaN substrates. The electroluminescence and the light output power-current density and current density-voltage relationships were measured. A saturated current density of 358â
kA/cm2 was achieved with a 20â
µm LED. The ideality factor curves showed steps and peaks when the injection current density was increased from 20 to 150â
kA/cm2 and an abnormal efficiency increase. The transport and recombination processes of micro-LEDs at high injection current densities were simulated, and the many-body effect and phase space filling in the integrated quantum drift-diffusion model were considered. Serious current crowding was observed above 100â
kA/cm2, even for the 20â
µm LED.
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1
Base de datos:
MEDLINE
Tipo de estudio:
Prognostic_studies
Idioma:
En
Revista:
Opt Express
Asunto de la revista:
OFTALMOLOGIA
Año:
2019
Tipo del documento:
Article