Realization of Self-Compliance Resistive Switching Memory via Tailoring Interfacial Oxygen.

Zhang, Haizhong; Ju, Xin; Zhou, Yu; Gu, Chenjie; Pan, Jisheng; Ang, Diing Shenp

Zhang, Haizhong; Ju, Xin; Zhou, Yu; Gu, Chenjie; Pan, Jisheng; Ang, Diing Shenp.

Afiliación

Zhang H; School of Electrical and Electronic Engineering , Nanyang Technological University , 50 Nanyang Avenue , Singapore 639798.
Ju X; School of Electrical and Electronic Engineering , Nanyang Technological University , 50 Nanyang Avenue , Singapore 639798.
Zhou Y; School of Electrical and Electronic Engineering , Nanyang Technological University , 50 Nanyang Avenue , Singapore 639798.
Gu C; Division of Microelectronics Science and Engineering, School of Science , Ningbo University , Ningbo 315211 , China.
Pan J; Institute of Materials Researc h and Engineering, A*STAR (Agency for Science, Technology and Research) , 2 Fusionopolis Way, Innovis, #08-03 , Singapore 138634.
Ang DS; School of Electrical and Electronic Engineering , Nanyang Technological University , 50 Nanyang Avenue , Singapore 639798.

ACS Appl Mater Interfaces ; 11(44): 41490-41496, 2019 Nov 06.

Article en En | MEDLINE | ID: mdl-31597415

Palabras clave

hafnium oxide; interface engineering; resistive switching memory; selector-less memory; self-compliance switching

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Texto completo: 1 Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2019 Tipo del documento: Article

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