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Negative Capacitance Vacuum Channel Transistors for Low Operating Voltage.
Choi, Woo Young.
Afiliación
  • Choi WY; Department of Electronic Engineering, Sogang University, Seoul 04107, Korea.
Micromachines (Basel) ; 11(6)2020 May 27.
Article en En | MEDLINE | ID: mdl-32471138
This study proposes negative capacitance vacuum channel transistors. The proposed negative capacitance vacuum channel transistors in which a ferroelectric capacitor is connected in series to the gate of the vacuum channel transistors have the following two advantages: first, adding a ferroelectric capacitor in series with a gate capacitor makes the turn-on voltage lower and on-off transition steeper without causing hysteresis effects. Second, the capacitance matching between a ferroelectric capacitor and a vacuum channel transistor becomes simplified because the capacitance of a vacuum channel transistor as seen from a ferroelectric capacitor is constant.
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Texto completo: 1 Base de datos: MEDLINE Idioma: En Revista: Micromachines (Basel) Año: 2020 Tipo del documento: Article

Texto completo: 1 Base de datos: MEDLINE Idioma: En Revista: Micromachines (Basel) Año: 2020 Tipo del documento: Article