Comparative Chemico-Physical Analyses of Strain-Free GaAs/Al<sub>0.3</sub>Ga<sub>0.7</sub>As Quantum Dots Grown by Droplet Epitaxy.

Yeo, Inah; Kim, Doukyun; Lee, Kyu-Tae; Kim, Jong Su; Song, Jin Dong; Park, Chul-Hong; Han, Il Ki

Comparative Chemico-Physical Analyses of Strain-Free GaAs/Al_0.3Ga_0.7As Quantum Dots Grown by Droplet Epitaxy.

Yeo, Inah; Kim, Doukyun; Lee, Kyu-Tae; Kim, Jong Su; Song, Jin Dong; Park, Chul-Hong; Han, Il Ki.

Afiliación

Yeo I; Dielectrics and Advanced Matter Physics Research Center, Pusan National University, Busan 46241, Korea.
Kim D; Dielectrics and Advanced Matter Physics Research Center, Pusan National University, Busan 46241, Korea.
Lee KT; Nanophotonics Research Center, Korea Institute of Science and Technology, Seoul 02792, Korea.
Kim JS; Department of Physics, Yeungnam University, Gyeonsan 38541, Korea.
Song JD; Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology, Seoul 02792, Korea.
Park CH; Dielectrics and Advanced Matter Physics Research Center, Pusan National University, Busan 46241, Korea.
Han IK; Nanophotonics Research Center, Korea Institute of Science and Technology, Seoul 02792, Korea.

Nanomaterials (Basel) ; 10(7)2020 Jul 02.

Article en En | MEDLINE | ID: mdl-32630839

Palabras clave

TEM-EDS; droplet epitaxy; strain-free quantum dot

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Texto completo: 1 Base de datos: MEDLINE Tipo de estudio: Prognostic_studies Idioma: En Revista: Nanomaterials (Basel) Año: 2020 Tipo del documento: Article

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Texto completo: 1 Base de datos: MEDLINE Tipo de estudio: Prognostic_studies Idioma: En Revista: Nanomaterials (Basel) Año: 2020 Tipo del documento: Article