Basal Plane Bending of Homoepitaxial MPCVD Single-Crystal Diamond.
Materials (Basel)
; 13(20)2020 Oct 12.
Article
en En
| MEDLINE
| ID: mdl-33053712
ABSTRACT
We report herein high-resolution X-ray diffraction measurements of basal plane bending of homoepitaxial single-crystal diamond (SCD). We define SCD (100) as the base plane. The results revealed that growth parameters such as temperature, growth time, and basal plane bending of the substrate all affect the basal plane bending of SCD. First, the basal plane bending of SCD depends mainly on the substrate and becomes severe with increasing basal plane bending of the substrate. The SCD growth experiments show that the basal plane bending increases with elevated growth temperature and increased growth time. Finally, to understand the mechanism, we investigated the substrate-surface temperature distribution as a function of basal plane bending of SCD fabricated by chemical vapor deposition (CVD). This allowed us to propose a model and understand the origin of basal plane bending. The results indicate that an uneven temperature distribution on the substrate surface is the main cause of the base-plane bending of CVD diamond.
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Base de datos:
MEDLINE
Idioma:
En
Revista:
Materials (Basel)
Año:
2020
Tipo del documento:
Article
País de afiliación:
China