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Near-Infrared Self-Powered Linearly Polarized Photodetection and Digital Incoherent Holography Using WSe2/ReSe2 van der Waals Heterostructure.
Ahn, Jongtae; Ko, Kyul; Kyhm, Ji-Hoon; Ra, Hyun-Soo; Bae, Heesun; Hong, Sungjae; Kim, Dae-Yeon; Jang, Jisu; Kim, Tae Wook; Choi, Sungwon; Kang, Ji-Hoon; Kwon, Namhee; Park, Soohyung; Ju, Byeong-Kwon; Poon, Ting-Chung; Park, Min-Chul; Im, Seongil; Hwang, Do Kyung.
Afiliación
  • Ahn J; Center of Optoelectronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea.
  • Ko K; Van der Waals Materials Research Center, Institute of Physics and Applied Physics, Yonsei University, Seoul 03722, Republic of Korea.
  • Kyhm JH; Center of Optoelectronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea.
  • Ra HS; Display and Nanosystem Laboratory, College of Engineering, Korea University, Seoul 02841, Republic of Korea.
  • Bae H; Quantum-functional Semiconductor Research Center, Dongguk University, Seoul 04620, Republic of Korea.
  • Hong S; Center of Optoelectronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea.
  • Kim DY; Van der Waals Materials Research Center, Institute of Physics and Applied Physics, Yonsei University, Seoul 03722, Republic of Korea.
  • Jang J; Van der Waals Materials Research Center, Institute of Physics and Applied Physics, Yonsei University, Seoul 03722, Republic of Korea.
  • Kim TW; Center of Optoelectronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea.
  • Choi S; Center of Optoelectronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea.
  • Kang JH; Division of Nano & Information Technology, KIST School, University of Science and Technology (UST), Seoul 02792, Republic of Korea.
  • Kwon N; Center of Optoelectronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea.
  • Park S; Center of Optoelectronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea.
  • Ju BK; Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States.
  • Poon TC; Advanced Analysis Center, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea.
  • Park MC; Advanced Analysis Center, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea.
  • Im S; Display and Nanosystem Laboratory, College of Engineering, Korea University, Seoul 02841, Republic of Korea.
  • Hwang DK; Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061, United States.
ACS Nano ; 15(11): 17917-17925, 2021 Nov 23.
Article en En | MEDLINE | ID: mdl-34677045
ABSTRACT
Polarization-sensitive photodetection has attracted considerable attention as an emerging technology for future optoelectronic applications such as three-dimensional (3D) imaging, quantum optics, and encryption. However, traditional photodetectors based on Si or III-V InGaAs semiconductors cannot directly detect polarized light without additional optical components. Herein, we demonstrate a self-powered linear-polarization-sensitive near-infrared (NIR) photodetector using a two-dimensional WSe2/ReSe2 van der Waals heterostructure. The WSe2/ReSe2 heterojunction photodiode with semivertical geometry exhibits excellent performance an ideality factor of 1.67, a broad spectral photoresponse of 405-980 nm with a significant photovoltaic effect, outstanding linearity with a linear dynamic range wider than 100 dB, and rapid photoswitching behavior with a cutoff frequency up to 100 kHz. Strongly polarized excitonic transitions around the band edge in ReSe2 lead to significant 980 nm NIR linear-polarization-dependent photocurrent. This linear polarization sensitivity remains stable even after exposure to air for longer than five months. Furthermore, by leveraging the NIR (980 nm)-selective linear polarization detection of this photodiode under photovoltaic operation, we demonstrate digital incoherent holographic 3D imaging.
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Texto completo: 1 Base de datos: MEDLINE Idioma: En Revista: ACS Nano Año: 2021 Tipo del documento: Article

Texto completo: 1 Base de datos: MEDLINE Idioma: En Revista: ACS Nano Año: 2021 Tipo del documento: Article