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Spontaneous Ferromagnetism Induced Topological Transition in EuB_{6}.
Liu, W L; Zhang, X; Nie, S M; Liu, Z T; Sun, X Y; Wang, H Y; Ding, J Y; Jiang, Q; Sun, L; Xue, F H; Huang, Z; Su, H; Yang, Y C; Jiang, Z C; Lu, X L; Yuan, J; Cho, Soohyun; Liu, J S; Liu, Z H; Ye, M; Zhang, S L; Weng, H M; Liu, Z; Guo, Y F; Wang, Z J; Shen, D W.
Afiliación
  • Liu WL; Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
  • Zhang X; School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.
  • Nie SM; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
  • Liu ZT; School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.
  • Sun XY; Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA.
  • Wang HY; Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
  • Ding JY; School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.
  • Jiang Q; School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.
  • Sun L; Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
  • Xue FH; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
  • Huang Z; Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
  • Su H; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
  • Yang YC; School of Information Science and Technology, ShanghaiTech University, Shanghai 201210, China.
  • Jiang ZC; School of Information Science and Technology, ShanghaiTech University, Shanghai 201210, China.
  • Lu XL; Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
  • Yuan J; School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.
  • Cho S; Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
  • Liu JS; Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
  • Liu ZH; Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
  • Ye M; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
  • Zhang SL; School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.
  • Weng HM; Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
  • Liu Z; Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
  • Guo YF; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
  • Wang ZJ; Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
  • Shen DW; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
Phys Rev Lett ; 129(16): 166402, 2022 Oct 14.
Article en En | MEDLINE | ID: mdl-36306743
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Texto completo: 1 Base de datos: MEDLINE Idioma: En Revista: Phys Rev Lett Año: 2022 Tipo del documento: Article País de afiliación: China
Texto completo
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Base de datos: MEDLINE Idioma: En Revista: Phys Rev Lett Año: 2022 Tipo del documento: Article País de afiliación: China