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Black Arsenic-Phosphorus Nanosheets for Highly Responsive Photodetection and Dual-Wavelength Ultrafast Pulse Generation at Telecommunication Bands.
Bao, Xiaozhi; Zhuo, Linqing; Dong, Weikang; Guo, Junpo; Wang, Gang; Wang, Bingzhe; Wei, Qi; Huang, Zongyu; Li, Jianding; Shen, Jingjun; Yu, Jianhui; Nie, Zhaogang; Ren, Wencai; Liu, Guanyu; Xing, Guichuan; Shao, Huaiyu.
Afiliación
  • Bao X; Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau SAR 999078, China.
  • Zhuo L; Key Laboratory of Optoelectronic Information and Sensing Technologies of Guangdong Higher Education Institutes, Department of Optoelectronic Engineering, Jinan University, Guangzhou 510632, China.
  • Dong W; School of Electronics and Information, Guangdong Polytechnic Normal University, Guangzhou 510665, China.
  • Guo J; 1 Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China.
  • Wang G; Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau SAR 999078, China.
  • Wang B; Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau SAR 999078, China.
  • Wei Q; Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau SAR 999078, China.
  • Huang Z; Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong 999077, China.
  • Li J; Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, School of Physics and Optoelectronic, Xiangtan University, Xiangtan, Hunan 411105, China.
  • Shen J; Huzhou Key Laboratory of Materials for Energy Conversion and Storage, School of Science, Huzhou University, Huzhou 313000, China.
  • Yu J; Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau SAR 999078, China.
  • Nie Z; Key Laboratory of Optoelectronic Information and Sensing Technologies of Guangdong Higher Education Institutes, Department of Optoelectronic Engineering, Jinan University, Guangzhou 510632, China.
  • Ren W; School of Physics & Photoelectric Engineering, Guangdong University of Technology, Guangzhou 510650, China.
  • Liu G; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China.
  • Xing G; School of Physics & Photoelectric Engineering, Guangdong University of Technology, Guangzhou 510650, China.
  • Shao H; Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau SAR 999078, China.
ACS Appl Mater Interfaces ; 14(46): 52270-52278, 2022 Nov 23.
Article en En | MEDLINE | ID: mdl-36350786
ABSTRACT
Black arsenic-phosphorus (b-AsP), an alloy containing black phosphorus and arsenic in the form of b-AsxP1-x, has a broadly tunable band gap changing with the chemical ratios of As and P. Although mid-infrared photodetectors and mode-locked or Q-switched pulse lasers based on b-AsP (mostly b-As0.83P0.17) are investigated, the potential of this family of materials for near-infrared photonic and optoelectronic applications at telecommunication bands is not fully explored. Here, we have verified a multifunctional fiber device based on b-As0.4P0.6 nanosheets for highly responsive photodetection and dual-wavelength ultrafast pulse generation at around 1550 nm. The fiber laser with a saturable absorber (SA) based on b-As0.4P0.6 nanosheets can output dual-wavelength mode-locking pulses with a larger bandwidth and spectral separation than those based on other two-dimensional (2D) materials. Remarkably, it is found that the b-As0.4P0.6-based photodetector can achieve a high responsivity of 10,200 A/W at 1550 nm and a peak responsivity of 2.29 × 105 A/W at 980 nm. Our work suggests that b-As0.4P0.6 shows great potential in ultrafast photonics, dual-comb spectroscopy, and infrared signal detection.
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Texto completo: 1 Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2022 Tipo del documento: Article País de afiliación: China

Texto completo: 1 Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2022 Tipo del documento: Article País de afiliación: China