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Nanometer-Thick Oxide Semiconductor Transistor with Ultra-High Drain Current.
Lin, Zehao; Si, Mengwei; Askarpour, Vahid; Niu, Chang; Charnas, Adam; Shang, Zhongxia; Zhang, Yizhi; Hu, Yaoqiao; Zhang, Zhuocheng; Liao, Pai-Ying; Cho, Kyeongjae; Wang, Haiyan; Lundstrom, Mark; Maassen, Jesse; Ye, Peide D.
Afiliación
  • Lin Z; Elmore Family School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States.
  • Si M; Elmore Family School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States.
  • Askarpour V; Department of Physics and Atmospheric Science, Dalhousie University, Halifax, Nova ScotiaB3H 4R2, Canada.
  • Niu C; Elmore Family School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States.
  • Charnas A; Elmore Family School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States.
  • Shang Z; School of Materials Engineering, Purdue University, West Lafayette, Indiana47907, United States.
  • Zhang Y; School of Materials Engineering, Purdue University, West Lafayette, Indiana47907, United States.
  • Hu Y; Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas75080, United States.
  • Zhang Z; Elmore Family School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States.
  • Liao PY; Elmore Family School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States.
  • Cho K; Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas75080, United States.
  • Wang H; School of Materials Engineering, Purdue University, West Lafayette, Indiana47907, United States.
  • Lundstrom M; Elmore Family School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States.
  • Maassen J; Department of Physics and Atmospheric Science, Dalhousie University, Halifax, Nova ScotiaB3H 4R2, Canada.
  • Ye PD; Elmore Family School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States.
ACS Nano ; 16(12): 21536-21545, 2022 Dec 27.
Article en En | MEDLINE | ID: mdl-36446079
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Texto completo: 1 Base de datos: MEDLINE Idioma: En Revista: ACS Nano Año: 2022 Tipo del documento: Article País de afiliación: Estados Unidos
Texto completo
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Base de datos: MEDLINE Idioma: En Revista: ACS Nano Año: 2022 Tipo del documento: Article País de afiliación: Estados Unidos