Investigation of Different Oxygen Partial Pressures on MgGa<sub>2</sub>O<sub>4</sub>-Resistive Random-Access Memory.

Kao, Yu-Neng; Huang, Wei-Lun; Chang, Sheng-Po; Lai, Wei-Chih; Chang, Shoou-Jinn

Investigation of Different Oxygen Partial Pressures on MgGa₂O₄-Resistive Random-Access Memory.

Kao, Yu-Neng; Huang, Wei-Lun; Chang, Sheng-Po; Lai, Wei-Chih; Chang, Shoou-Jinn.

Afiliación

Kao YN; Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan City 70101, Taiwan.
Huang WL; Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan City 70101, Taiwan.
Chang SP; Department of Photonics, National Cheng Kung University, Tainan City 70101, Taiwan.
Lai WC; Department of Photonics, National Cheng Kung University, Tainan City 70101, Taiwan.
Chang SJ; Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan City 70101, Taiwan.

ACS Omega ; 8(4): 3705-3712, 2023 Jan 31.

Article en En | MEDLINE | ID: mdl-36743031

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Texto completo: 1 Base de datos: MEDLINE Tipo de estudio: Clinical_trials / Prognostic_studies Idioma: En Revista: ACS Omega Año: 2023 Tipo del documento: Article País de afiliación: Taiwán

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