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Reversible Semimetal-Semiconductor Transition of Unconventional-Phase WS2 Nanosheets.
Zhai, Wei; Qi, Junlei; Xu, Chao; Chen, Bo; Li, Zijian; Wang, Yongji; Zhai, Li; Yao, Yao; Li, Siyuan; Zhang, Qinghua; Ge, Yiyao; Chi, Banlan; Ren, Yi; Huang, Zhiqi; Lai, Zhuangchai; Gu, Lin; Zhu, Ye; He, Qiyuan; Zhang, Hua.
Afiliación
  • Zhai W; Department of Chemistry, City University of Hong Kong, Hong Kong, China.
  • Qi J; Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, China.
  • Xu C; Department of Applied Physics and Research Institute for Smart Energy, The Hong Kong Polytechnic University, Hong Kong, China.
  • Chen B; Department of Chemistry, City University of Hong Kong, Hong Kong, China.
  • Li Z; Department of Chemistry, City University of Hong Kong, Hong Kong, China.
  • Wang Y; Department of Chemistry, City University of Hong Kong, Hong Kong, China.
  • Zhai L; Department of Chemistry, City University of Hong Kong, Hong Kong, China.
  • Yao Y; Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Hong Kong, China.
  • Li S; Department of Chemistry, City University of Hong Kong, Hong Kong, China.
  • Zhang Q; Department of Chemistry, City University of Hong Kong, Hong Kong, China.
  • Ge Y; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
  • Chi B; Department of Chemistry, City University of Hong Kong, Hong Kong, China.
  • Ren Y; Department of Chemistry, City University of Hong Kong, Hong Kong, China.
  • Huang Z; Department of Chemistry, City University of Hong Kong, Hong Kong, China.
  • Lai Z; Department of Chemistry, City University of Hong Kong, Hong Kong, China.
  • Gu L; Department of Applied Physics and Research Institute for Smart Energy, The Hong Kong Polytechnic University, Hong Kong, China.
  • Zhu Y; Beijing National Center for Electron Microscopy and Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.
  • He Q; Department of Applied Physics and Research Institute for Smart Energy, The Hong Kong Polytechnic University, Hong Kong, China.
  • Zhang H; Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, China.
J Am Chem Soc ; 145(24): 13444-13451, 2023 Jun 21.
Article en En | MEDLINE | ID: mdl-37279025
Phase transition with band gap modulation of materials has gained intensive research attention due to its various applications, including memories, neuromorphic computing, and transistors. As a powerful strategy to tune the crystal phase of transition-metal dichalcogenides (TMDs), the phase transition of TMDs provides opportunities to prepare new phases of TMDs for exploring their phase-dependent property, function, and application. However, the previously reported phase transition of TMDs is mainly irreversible. Here, we report a reversible phase transition in the semimetallic 1T'-WS2 driven by proton intercalation and deintercalation, resulting in a newly discovered semiconducting WS2 with a novel unconventional phase, denoted as the 1T'd phase. Impressively, an on/off ratio of >106 has been achieved during the phase transition of WS2 from the semimetallic 1T' phase to the semiconducting 1T'd phase. Our work not only provides a unique insight into the phase transition of TMDs via proton intercalation but also opens up possibilities to tune their physicochemical properties for various applications.

Texto completo: 1 Base de datos: MEDLINE Idioma: En Revista: J Am Chem Soc Año: 2023 Tipo del documento: Article País de afiliación: China

Texto completo: 1 Base de datos: MEDLINE Idioma: En Revista: J Am Chem Soc Año: 2023 Tipo del documento: Article País de afiliación: China