Enhancingß-Ga2O3-film ultraviolet detectors via RF magnetron sputtering with seed layer insertion onc-plane sapphire substrate.

Enhancingß-Ga₂O₃-film ultraviolet detectors via RF magnetron sputtering with seed layer insertion onc-plane sapphire substrate.

Wang, Guodong; Wang, Haohan; Chen, Tingyu; Feng, Yanji; Zeng, Hua; Guo, Lanlan; Liu, Xiaolian; Yang, Yingli.

Afiliación

Wang G; School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo, 454003, People's Republic of China.
Wang H; School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo, 454003, People's Republic of China.
Chen T; School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo, 454003, People's Republic of China.
Feng Y; School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo, 454003, People's Republic of China.
Zeng H; School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo, 454003, People's Republic of China.
Guo L; School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo, 454003, People's Republic of China.
Liu X; School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo, 454003, People's Republic of China.
Yang Y; Instrumental Analysis Center, Henan Polytechnic University, Jiaozuo, 454003, People's Republic of China.

Nanotechnology ; 35(9)2023 Dec 12.

Article en En | MEDLINE | ID: mdl-37995378